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    SILICO TRANSISTOR Search Results

    SILICO TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SILICO TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6387

    Abstract: 2N6388
    Text: 2N6387 2N6388 SILICO NPN POWER DARLINGTON TRANSISTORS n 2N6388 IS SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N6387 and 2N6388 are silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package.


    Original     		PDF 2N6387 2N6388 2N6388 2N6387 O-220 O-220

    JE172

    Abstract: JE182 JE170 je171 JE180 MJE170 motorola MJE180 MOTOROLA JE181 mj317 MJ31-7
    Text: M O T O R C L A SC l^ E D I XSTRS/R F t3b?aS4 0005307 7 | r -3 3 -t f Ÿ PNP r» -3 3 -¡7 MOTOROLA MJE170 thru MJE172 SEMICONDUCTOR NPN TECHNICAL DATA MJE180 thru MJE182 COM PLEMENTARY PLASTIC SILICO N POWER TRANSISTORS 3 AMPERE POWER TRANSISTORS COM PLEMENTARY SILICO N


    OCR Scan     		PDF MJE170 MJE172 MJE180 MJE182 MJE170, MJE180 MJE171, MJE181 MJE172, JE172 JE182 JE170 je171 JE180 MJE170 motorola MJE180 MOTOROLA JE181 mj317 MJ31-7

    LT 5337

    Abstract: 2N5339 2N6193, Motorola LN 7904 2N5336 2n5337 2n5338 NS338
    Text: MOTOROL A SC XSTR S/ R F 1 3 E D I b3b?254 0004542 1 | 2N5336 MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N5339 MEDIUM-POWER NPN SILICO N TRAN SISTO RS 5 AM PERE POWER TRAN SISTORS NPN SILICO N . . . designed for switching and wide band amplifier applications.


    OCR Scan     		PDF 2N5336 2N5339 2N6190 2N6193 LT 5337 2N5339 2N6193, Motorola LN 7904 2n5337 2n5338 NS338

    MPF108

    Abstract: No abstract text available
    Text: MPF108 SILICON JUNCTION FIELD-EFFECT TRAN SISTO R SILICO N N-CHANNEL JUNCTION FIELD-EFFECT T R A N SIST O R SY M M E T R IC A L SILICO N N-CHANNEL Depletion mode (Type A) transistor designed for V H F amplifier and mixer applications. Type A • Devices are Classified and Identified in 2:1 IQ SS Ranges


    OCR Scan     		PDF MPF108 MPF108

    MJ3773

    Abstract: AN-415 MJ6302
    Text: MJ3773, MJ6302 SILICON 16 AM PERE POWER TR A N SISTO R S HIGH POWER NPN SILICO N POWER TRA N SISTO R S Hpibase transistors for ultimate circu it performance based on the designer's requirement. E P IB A S E NPN SILICO N 120, 140 V O L T S 200 W ATTS — designed for power am plifier and switching


    OCR Scan     		PDF MJ3773, MJ6302 MJ3773 MJ6302 MJ3773 I--55 AN-415

    2N5845

    Abstract: MPS834 MPS3638
    Text: MPS834 silicon NPN SILICO N SWITCHING TRA N SISTO R NPN SILICO N A N N U LA R SWITCHING TRA N SISTO R . . . designed for use in high-speed switching applications. • Collector-Em itter Breakdown Voltage — B V c E O = 30 V dc (Min) @ I q = 10 mAdc •


    OCR Scan     		PDF MPS834 2N5845 MPS3638 MPS834

    MJ15001

    Abstract: MJ15002 200 watts audio power amp transistors 200 watts audio amp power transistors 3576 transistor
    Text: 4 1 MOTOROLA í 4 . G i r PNP NPN Ml15001 MJ15002 SEMICONDUCTOR TECHNICAL DATA 15 AM PER E POWER TRA N SISTO R S CO M PLEM EN TARY SILICO N CO M PLEM EN TARY SILICO N POWER TRA N SISTO R S 140 V O L T S 2 00 W A T T S The M J 15001 and M J 15002 are EpiBase power transistors designed


    OCR Scan     		PDF MJ15001 MJ15002 MJ15002 MJ15001 200 watts audio power amp transistors 200 watts audio amp power transistors 3576 transistor

    2N5179

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e RF Line 4.5 dB @ 200 MHz HIGH FREQUENCY TRANSISTOR NPN SILICO N NPN SILICO N RF HIGH FREQ UENCY TRANSISTOR . . . designed p r im a r ily fo r use in high -g a in , lo w -n o is e a m p lifie r , o s c il­ la to r, and m ix e r a p p lic a tio n s .


    OCR Scan     		PDF 2N5179 35flo 2N5179

    D515 transistor

    Abstract: transistor c 5171 BD520 transistor s19 bd519 BD517 BD 54 transistor
    Text: MOTOROLA SC -CXSTRS/R 6367254 “Tb F> MOTOROLA SC DE | t . 3 b 7 S S 4 00ö0ti03 Ö 96D 8 0 6 0 3 CXSTRS/ R F D T^33-o7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN SILICO N A M PLIFIER TR A N S IS TO R S 4 5 - 60 - 80 VOLTS 10 W ATTS NPN SILICO N ANNULAR


    OCR Scan     		PDF 0ti03 33-o7 BD515 BD517 BD519 BD516, BD518, BD520 D515 transistor transistor c 5171 BD520 transistor s19 BD 54 transistor

    BUT50P

    Abstract: MC 340 transistor y145m But50
    Text: M O TO RO LA SC XSTRS/R F is e D | b3fc.7aS4 GQflMfl7M M | T -3 3 - J 9 MOTOROLA SEM ICO NDU CTO R BUT50P TECHNICAL DATA AD V A N C E INFORM ATION 8 AM PERES NPN SILICO N POWER DARLIN GTO N TRAN SISTO RS SW ITCHMODE* SE R IES NPN SILICO N POWER DARLIN GTO N TRAN SISTO RS


    OCR Scan     		PDF T-33-J9 BUT50P 300/is, MC 340 transistor y145m But50

    ic Lb 598 d

    Abstract: MPQ3467 D 1879 transistor 2N3467 transistor N 343 AD Lb 598 d rfl3
    Text: MPQ3467 SILICON QUAD D UAL IN-LINE PNP SILICO N AN N ULAR MEMORY D R IV E R TRA N SISTO R S QUAD DUAL-IN -LINE PNP SILICO N M EM ORY D R IV E R TR A N SISTO R S . . . designed for medium-current, high-speed switching, ferrite core and plated w ire memory driver, and MOS translator applications.


    OCR Scan     		PDF MPQ3467 2N3467 O-116 100MHzl 50mAdc) 100kJÃ ic Lb 598 d MPQ3467 D 1879 transistor 2N3467 transistor N 343 AD Lb 598 d rfl3

    BD518

    Abstract: BD517 BD515 BD520 BD516 BD516-1 BD519 BDS16 BDS18 A02K
    Text: Tb MOTOROLA SC -CXSTRS/R FJ- 6367254 M OT O R O L A SC XSTRS/R »F|b3b?2SM QOflObQS 96D 8 0 6 0 5 F T D - 3 S - / 7 MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA PNP SILICO N ANNULAR * AM PLIFIER TR A N SISTO R S 4 5 - 6 0 - 8 0 VOLTS 10 WATTS PNP SILICO N ANNULAR


    OCR Scan     		PDF 45Vdc BD516 BD518 BD520 BD515, BD517, BD519 BD516-1, 8D516-5, BD517 BD515 BD516-1 BDS16 BDS18 A02K

    2N6388

    Abstract: No abstract text available
    Text: SGS-THOMSON 2N6387 2N6388 [MSIfiiSilLiSìlKìtÉfflOSS SILICO NPN POWER DARLINGTON TRANSISTORS . 2N6388 IS SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON . HIGH CURRENT CAPABILITY . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The 2N6387 and


    OCR Scan     		PDF 2N6387 2N6388 2N6388 O-220

    4227t

    Abstract: 2043A TRANSISTOR R 2453
    Text: SANYO SEMICONDUCTOR CORP 2SD1914 NPN Epitaxial Planar Silico n Darlington Transistor 204 3 A - Driver Applications . 2453 Applications . Motor drivers, printer hammer drivers, relay drivers, voltage regulator control Features . Darlington connection . High DC current gain


    OCR Scan     		PDF 2SD1914 IS-126 1S-126A IS-20MA 4227t 2043A TRANSISTOR R 2453

    KST4123

    Abstract: No abstract text available
    Text: KST4123 NPN EPITAXIAL SILICO N TRANSISTO R GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		PDF KST4123 OT-23 10/iA, 100MHz 100MHz 100KHz 00/jA, b4142 QQ2S117 KST4123

    MD982

    Abstract: MD982F MQ982
    Text: MD982 SILICON MD982F MQ982 M ULTIPLE SILICO N ANNULAR TRANSISTORS PNP SILICON M ULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose am plifiers, front end detectors, and temperature compensation applications. •


    OCR Scan     		PDF MD982 MD982F MQ982 MQ982 MD980) IC-10

    transistor A55

    Abstract: MPSA55 a06 transistor MPS-A05 MPS-A06 MPS-A55 MPS-A56 MPSA06 transistor transistor mpsa 92 psa06
    Text: MPS-A05, MPS-A06NPN MPS-A55, MPS-A56PNP SILICON C O M PLEM EN TARY SILICO N A N N U LA R A M P L IF IE R TR A N S IS TO R S C O M PLEM EN TARY SILICO N A M P L IF IE R TRA N SISTO R S . designed for use as medium-power driver and low-power outputs. High Collector-Emitter Breakdown Voltage —


    OCR Scan     		PDF MPS-A05, MPS-A06NPN MPS-A55, MPS-A56PNP -MPS-A05, MPS-A55 MPS-A06, MPS-A56 transistor A55 MPSA55 a06 transistor MPS-A05 MPS-A06 MPS-A55 MPSA06 transistor transistor mpsa 92 psa06

    b1181

    Abstract: 2043A TRANSISTOR b1181 transistor 9-t b1252 TRANSISTOR darlington fp 1016 2SD1914 DDD3710 IC 2453 FSIM
    Text: SANYO SEMICONDUCTOR CORP 2SD1914 NPN Epitaxial Planar Silico n Darlington Transistor 204 3 A - Driver Applications . 2453 Applications . Motor drivers, printer hammer drivers, relay drivers, voltage regulator control Features . Darlington connection . High DC current gain


    OCR Scan     		PDF 2SD1914 B1181 B1252 2043A TRANSISTOR b1181 transistor 9-t b1252 TRANSISTOR darlington fp 1016 DDD3710 IC 2453 FSIM

    MMBA811C7

    Abstract: MMBT5086 transistor marking fl VC80
    Text: SAMSUNG SEMICONDUCTOR INC MMBA811C7 14E D §7^4143 0007530 & | PNP EPITAXIAL SILICO N TRANSISTOR DRIVER TRANSISTOR " SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vottage Coitector Current


    OCR Scan     		PDF MMBA811C7_ MMBT5086 OT-23 100MHz MMBA811C7 transistor marking fl VC80

    KSD5005

    Abstract: No abstract text available
    Text: NPN TRIPLE DIFFUSED PLANAR SILICO N TRANSISTOR KSD5005 COLOR TV HORIZONTAL OUT PUT APPLICATIONS HIGH Collector-Base Voltage V Cb o = 1500V ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF KSD5005 KSD5005

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICO N TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic j | | | Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		PDF KST1009F1/F2/F3/F4/F5 100MHz KST1009F1 KST1009F2 KST1009F3 KST1009F4 KST1009F5 KST1009F1 KST1009F2

    Untitled

    Abstract: No abstract text available
    Text: MMBTA92 PNP EPITAXIAL SILICO N TRAN SISTO R HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF MMBTA92 OT-23

    MJH6284

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJH6284/D SEMICONDUCTOR TECHNICAL DATA NPN MJH6284 Darlington Com plem entary Silico n Power Transistors PNP MJH6287 . . . designed for general-purpose amplifier and low-speed switching motor control applications. • • •


    OCR Scan     		PDF MJH6284/D 2N6284 2N6287 MJH6284 MJH6287 t-800-441-244 MJH6284

    Untitled

    Abstract: No abstract text available
    Text: KSC5054 NPN EPITAXIAL SILICO N TRANSISTOR HIGH SPEED HIGH VOLTAGE SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Collector B ase Voltage Collector Emitter Voltage Emitter B ase Voltage B ase Current Collector Current DC "Collector Current (Pulse)


    OCR Scan     		PDF KSC5054 7Tb4142