SILICIUM POWER TRANSISTOR Search Results

SILICIUM POWER TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

SILICIUM POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
bf417 Abstract: Bf 417 g transistor Text: <^£.mL-dondu<itoi LPioaucti, L/nc. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF415 *BF417 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL Compl. of BF 416 and BF 418	Original	BF415 BF417 JO-126- CB-16 bf417 Bf 417 g transistor	PDF
transistor 6032 Abstract: 2N6033 sss 1120 2n6032 60322n transistor 6032 mh Text: 2N 6032 2N 6033 NPN SILICON TRANSISTORS,EPITAXIAL COLLECTOR TRANSISTORS SILICIUM,NPN' COLLECTEUR EPITAXIE - High current, high speed, high power transistor Transistor rapide fort courant, forte puissance - Fast switching and am plifier applications Transistors de commutation et d'amplification rapide	OCR Scan	CB-19 transistor 6032 2N6033 sss 1120 2n6032 60322n transistor 6032 mh	PDF
2N4347 Abstract: 3632N w15c Text: 2N 4347 NPN SILICON TRANSISTOR, HOMOBASE TRANSISTOR NPN SILICIUM , HOMOBASE LF large signal power amplification Amplification de puissance de grands signaux BF Thermal fatigue inspection Contrôle en fatigue thermique v CEO 120 V 5 A *tot 100 W Rth j-c	OCR Scan	CB-19 2N4347 2N4347 3632N w15c	PDF
transistor BUX Abstract: BUX14 TR07 Text: *B U X 14 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN, TRIPLE DIFFUSE % Preferred device D is p o s itif recom m andé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension Thermal fatigue inspection	OCR Scan	BUX14 CB-19 transistor BUX BUX14 TR07	PDF
2N3584 Abstract: 2n4240 2n 6021 SCHEMA 2N3583 3584 TCA 321 2n3585 3583 Text: 2N 3584 ,* 2 N 358b 5^2I\I 3585 ^ 2 N 4240 NPN SILICON TRANSISTORS, TRIPLE DIFFUSED MESA * TRANSISTORS NPN SILICIUM, MESA TRIPLE DIFFUSES ^Preferred device Dispositif recommandé - High voltage linear power am plifier Amplification linéaire de puissance forte tension	OCR Scan	CB-72 2N3584 2n4240 2n 6021 SCHEMA 2N3583 3584 TCA 321 2n3585 3583	PDF
BC211 Abstract: TR BC BC211A BC313A bc 313 iriver BC313 h21e deflexion NPN pnp MATCHED PAIRS Text: *B C 211 BC 211 A NPN SILICON TRANSISTORS, PLANAR TRANSISTORS NPN SILICIUM, PLANAR H5 Preferred device Dispositif recommandé The BC 211 and BC 211 A are intended for a iride variety of medium power medium speed witching and AF amplifier application ; they	OCR Scan		PDF
BUX20 Abstract: bux 716 transistor BUX Text: *B U X 2 0 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN. TRIPLE DIFFUSE Preferred device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant Thermal fatigue inspection	OCR Scan	BUX20 CB-159 BUX20 bux 716 transistor BUX	PDF
2N3738 Abstract: 3302N Text: * 2 N 3738 NPN SILICON TR AN SISTO R , D IFFU SED M ESA TRANSISTOR NPN SILICIUM, MESA DIFFUSE Preferred device Dispositif recommandé L F large signal power amplification Amplification B F grands signaux de puissance 225 V v C EO High voltage switching Commutation haute tension	OCR Scan	CB-72on CB-72 2N3738 3302N	PDF
185t2 Abstract: bdy28 BF 184 184T2 BDY26 BDY27 185T2A 185T2B Text: * B D Y 2 6 183 T2 B D Y 2 7 184 12 B D Y 28 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA TRANSISTORS NPN SILICIUM , MESA DIFFUSES ^ Preferred device Dispositif recommandé LF large signal power amplification 180 V 200 V BDY 26 , 183 T2 BDY 27 , 184 T2	OCR Scan	BDY26 BDY27 87-5W_ CB-19 185t2 bdy28 BF 184 184T2 185T2A 185T2B	PDF
2N697 Abstract: 2N696 bf 697 transistor BF 697 BF 696 OC 696 2n 697 FT2N Text: NPN S ILIC O N TR A N S IS TO R S , E P IT A X IA L P LA N A R TRANSISTORS NPN SILICIUM PLANAR EPITAXIAUX , LF amplification Amplification BF 40 V V CER Switching Commutation ^21E fT Maximum power dissipation Dissipa tion de puissance maximale iti A 12 0 - 6 0	OCR Scan	2N697 2N696 2N697 2N696 bf 697 transistor BF 697 BF 696 OC 696 2n 697 FT2N	PDF
2n3824 Abstract: transistor a effet de champ 3824 Text: 2I\I 3824 F IE L D E FF E C T T R A N S IS T O R , S IL IC O N , N C H A N N E L TRANSISTOR A E F FE T DE CHAMP, SILICIUM , CANAL N Chopper Découpeur Maximum power dissipation Case TO -72 — See outline drawing CB-4 on last pages Dissipation aepuissance maximale	OCR Scan		PDF
KN303 Abstract: n306a APM 2510 2SF100 C12S Scans-048 apm 2510 n KF190 silicium power transistor broadcas amplifier Text: nOAEBblE TPAH3HCTOPBI FIELD-EFFECT TRANSISTORS FELDEFFEKTTRANSISTOR EN TRANSISTORS A EFFET DE CHAMP IST 2 riEPEHEHb TPAH3MCTOPOB LIST OF TRANSISTORS TRANSISTORENLISTE LISTE DE TRANSISTORS Grp. Page Knioir-KmoiE 11 Kni03E-Kni03M Kni03EP-KTI103MP 15 KriC104A-KnC104XI .	OCR Scan	KriC104A-KnC104XI KnC202A-KnC20 -Kn202E Kni03E-Kni03M Kni03EP-KTI103MP Kn201E-Kn201/l Kn301B Kn302A-Kn302r. Kn303A-Kn303H Kn304A. KN303 n306a APM 2510 2SF100 C12S Scans-048 apm 2510 n KF190 silicium power transistor broadcas amplifier	PDF
canal Abstract: 2N5432 2N5433 2N p channel 2N5434 Text: 2 N 5432 2 N 5433 *2 N 5434 FIELD-EFFECT TRANSISTORS, SILICON. N CHANNEL TRANSISTORS A EFFET DE CHAMP, SILICIUM. CANAL N % Preferred device D isp o sitif recommandé Fast switching Commutation rapide 150 mA min. 100 mA min. 30 mA min. Chopper Découpeur	OCR Scan	T0-18 canal 2N5432 2N5433 2N p channel 2N5434	PDF
73T2 Abstract: 300s6 74T2 Text: 73 T2 74 T2 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX • LF large signal amplification up to 1 A Amplification BF grands signaux jusqu'à 1 A Case F 88 Dissipation derating — See outline drawing CB-44 on last pages;	OCR Scan	CB-44 73T2 300s6 74T2	PDF

transistor BF 245 Abstract: bf 245 BF245 transistor BF245 transistor BF 245 c transistor BF245 A BF245 canal n BF245 TRANSISTOR BF 245 C transistor Bf-245 Text: BF245 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EFFE T DE CHAMP, SILICIUM , CANAL N - LF and HF amplification Vos 30 V max IDSS 2 . 25 mA .Vg s = 0 in 3 groups Amplification BF et H F en 3 groupes 1,1 pF typ. C12S Plastic case F 139 B — See outline drawing CB-76 on last pages	OCR Scan	BF245 CB-76 C22ss 300/is transistor BF 245 bf 245 BF245 transistor BF245 transistor BF 245 c transistor BF245 A BF245 canal n BF245 TRANSISTOR BF 245 C transistor Bf-245	PDF
BFR38 Abstract: 639 TRANSISTOR PNP BFR 38 Text: BFR 38 PNP SILICON TRANSISTOR, EPITA X IA L PLANAR TRANSISTOR PNP SILICIUM, PLANAR EPITAXIAL - T V aerial amplifiers Amplificateurs d'antenne TV V CEO -3 5 V *C - 2 0 mA h 2 ig —3 mA 25 min. fx (—3 mA) 700 MHz min. Case TO-72 — See outline drawing CB-4 on last pages	OCR Scan	BFR38 BFR38 639 TRANSISTOR PNP BFR 38	PDF
4302 Abstract: 4304 transistor ESM 30 transistor ESM ESM4302 ESM4303 ESM4304 esm 4303 a 4304 Text: ESM4302 ESM4303 ESM4304 FIELD EFFECT TRANSISTORS, SILICON, N CHANNEL TRANSISTORS A EFFE T DE CHAMP, SILICIUM, CANAL N LF amplification A m plification BF ro M -< IDSS Plastic case M a x im u m p o w e r d is s ip a tio n Dissipation de puissance maximale 0,5 - 5 mA	OCR Scan	ESM4302 ESM4303 ESM4304 CB-76 4302 4304 transistor ESM 30 transistor ESM ESM4304 esm 4303 a 4304	PDF
BC264 Abstract: transistor a effet de champ b c 264 transistor bc264 F-139 equivalent transistor BC 55 TRANSISTOR effet de champ BC 264 CB-76 50 transistor BC 1 BF 212 transistor Text: BC 264 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EF FE T OE CHAMP, SILICIUM, CANAL N - LF amplification Amplification BF V DS 30 V max. ' dss 2 . . . . 12 mA à V GS = 0 in 4 groups en 4 groupes F 2 dB max à V q § = 0 f » 1 kHz Plastic case F 139 B — See outline drawing CB-76 on last pages	OCR Scan	CB-76 lY21sl BC264 transistor a effet de champ b c 264 transistor bc264 F-139 equivalent transistor BC 55 TRANSISTOR effet de champ BC 264 CB-76 50 transistor BC 1 BF 212 transistor	PDF
BF679 Abstract: BF680 BF 679 BF679 transistor bf 680 BF-680 BF 2000 L 146 CB J BF679 CB-146 Text: BF679 BF680 PNP S IL IC O N T R A N S IS T O R S , P L A N A R TRANSISTORS PNP SILICIUM, PLANAR % Preferred device D is p o s itif recommandé BF 679 is intended for gain controlled input stages in UHF T V tuners. BF 680 is intended for self oscillating mixers	OCR Scan	BF679 CB-146 200/is BF679 BF680 BF 679 BF679 transistor bf 680 BF-680 BF 2000 L 146 CB J BF679	PDF
transistor BF 257 Abstract: bf259 BF257 ltls BF258 signaux BF 259 C22E BF 258 Text: BF 257 BF 258 BF 259 N PN S IL IC O N T R A N S IS T O R S , E P IT A X IA L P L A N A R TRANSISTORS NPN S ILIC IU M , P LAN A R E P IT A X IA U X ^ Preferred device Dispositif recommandé The NPN planar epitaxial transistors BF 257, BF 258 and BF 259 are intended fo r use in chrominance out	OCR Scan		PDF
Transistor B C 458 Abstract: c 458 c transistor transistor c 458 transistor bf 458 transistor 458 NPN transistor 458 458 transistor transistor C 459 transistor cb 458 LM 458 Text: BF 457 BF 458 *BF 459 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN SILICIUM, PLANAR % Preferred device Dispositif recommandé BF 457, BF 458 and BF 459 are plastic encapsulated transistor designed for video output stages in black and white and color TV receivers. These transistors feature	OCR Scan	BF459sont Transistor B C 458 c 458 c transistor transistor c 458 transistor bf 458 transistor 458 NPN transistor 458 458 transistor transistor C 459 transistor cb 458 LM 458	PDF
BF418 Abstract: BF416 J BF418 416 TRANSISTOR BF transistor BF417 transistor 417 Bf 417 g transistor BF415 emetteur video Text: BF 416 *BF418 PNP SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR PNP SILICIUM, PLANAR EPITAXIAL Compì, of BF 415 and BF 417 Preferred device D isp o sitif recommandé Video output stages in T V sets Etages de sortie des amplificateurs Video dans ies téléviseurs	OCR Scan	BF416 BF418 O-126- CB-16 BF418 BF416 J BF418 416 TRANSISTOR BF transistor BF417 transistor 417 Bf 417 g transistor BF415 emetteur video	PDF
BO 241 A Abstract: bd2410 BD241 TF 241 BD NPN transistors BD - 100 V jc31 241B BD 241 7410 Text: BD 241, BD 241 A BD 241B. BD 241C NPN SILICON TRANSISTORS, EP ITAXIAL BASE TRANSISTORS NPN SILICIUM. BASE EPITAXIEE Compf. of BO 242, A, B, C P R ELIM INARY DATA NOTICE PRELIMINAIRE - Complementary symetry stages amplifiers /4 5 V I 60 V 180 V *1 0 0 V 3 A	OCR Scan	O-220 drawingCB-117on BO 241 A bd2410 BD241 TF 241 BD NPN transistors BD - 100 V jc31 241B BD 241 7410	PDF
transistor a effet de champ Abstract: BF247 transistor 139 BF signaux Text: BF247 F IE L D E FFEC T T R A N S IS T O R , S IL IC O N , N C H A N N E L TRANSISTOR A E FFE T DE CHAMP, SILICIUM, CANAL N -Amplification Amplification -Chopper Découpeur V DS 25 V max. ' dss 30 . . . 25 0 mA à V QS = 0 in 3 groups e n 3 groupes 2 3 m A /V ty p à V GS = 0	OCR Scan	Iy21sI CB-76 C11ss C22ss C12ss transistor a effet de champ BF247 transistor 139 BF signaux	PDF

SILICIUM POWER TRANSISTOR Search Results

SILICIUM POWER TRANSISTOR Result Highlights (5)

SILICIUM POWER TRANSISTOR Datasheets Context Search

bf417

transistor 6032

2N4347

transistor BUX

2N3584

BC211

BUX20

2N3738

185t2

2N697

2n3824

KN303

canal

73T2

transistor BF 245

BFR38

4302

BC264

BF679

transistor BF 257

Transistor B C 458

BF418

BO 241 A

transistor a effet de champ