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    Abstract: No abstract text available
    Text: SiHFIB11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.52 Qg (Max.) (nC) 52 Qgs (nC) 13 Qgd (nC) 18 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF SiHFIB11N50A O-220 18-Jul-08

    sihfib11n50a

    Abstract: SiHFIB11N50A-E3 SiHFB11N50A
    Text: SiHFIB11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.52 Qg (Max.) (nC) 52 Qgs (nC) 13 Qgd (nC) 18 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF SiHFIB11N50A O-220 18-Jul-08 SiHFIB11N50A-E3 SiHFB11N50A