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    IRFB16N50K

    Abstract: SiHFB16N50K SiHFB16N50K-E3
    Text: IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.285 Qg (Max.) (nC) 89 Qgs (nC) 27 Qgd (nC) 43 Configuration Available RoHS* • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT


    Original     		PDF IRFB16N50K, SiHFB16N50K O-220 18-Jul-08 IRFB16N50K SiHFB16N50K-E3

    IRFB16N50K

    Abstract: SiHFB16N50K SiHFB16N50K-E3
    Text: IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.285 Qg (Max.) (nC) 89 Qgs (nC) 27 Qgd (nC) 43 Configuration Available RoHS* • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT


    Original     		PDF IRFB16N50K, SiHFB16N50K O-220 18-Jul-08 IRFB16N50K SiHFB16N50K-E3

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    Abstract: No abstract text available
    Text: IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.285 Qg (Max.) (nC) 89 Qgs (nC) 27 Qgd (nC) 43 Configuration Available RoHS* • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT


    Original     		PDF IRFB16N50K, SiHFB16N50K O-220 O-220 IRFB16N50KPbF SiHFB16N50K-E3 IRFB16Nmerchantability, 12-Mar-07