BSM100GB170DL
Abstract: SIGC185T170R2C
Text: Preliminary SIGC185T170R2C IGBT Chip in NPT-technology FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE ICn SIGC185T170R2C 1700V 100A C This chip is used for:
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SIGC185T170R2C
BSM100GB170DL
Q67041-A4697A001
7371M,
BSM100GB170DL
SIGC185T170R2C
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A001
Abstract: BSM100GB170DL SIGC185T170R2C
Text: Preliminary SIGC185T170R2C IGBT Chip in NPT-technology FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE ICn SIGC185T170R2C 1700V 100A C This chip is used for:
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Original
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PDF
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SIGC185T170R2C
BSM100GB170DL
Q67041-A4697sawn
7371M,
A001
BSM100GB170DL
SIGC185T170R2C
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Untitled
Abstract: No abstract text available
Text: SIGC185T170R2C IGBT Chip in NPT-technology FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE ICn SIGC185T170R2C 1700V 100A C This chip is used for: • IGBT-Module BSM100GB170DL
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Original
|
PDF
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SIGC185T170R2C
BSM100GB170DL
Q67041-A4697A001
7371M,
|
Untitled
Abstract: No abstract text available
Text: SIGC185T170R2C IGBT Chip in NPT-technology Features: • 1700V NPT technology 280µm chip short circuit prove positive temperature coefficient easy paralleling Qualified according to JEDEC for target applications Chip Type VCE SIGC185T170R2C 1700V
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Original
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PDF
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SIGC185T170R2C
SIGC185T170R2C
L7371M,
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Untitled
Abstract: No abstract text available
Text: SIGC185T170R2C IGBT Chip in NPT-technology FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE ICn SIGC185T170R2C 1700V 100A C This chip is used for: • IGBT-Module BSM100GB170DL
|
Original
|
PDF
|
SIGC185T170R2C
BSM100GB170DL
Q67041-A4697A001
7371M,
|