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    SIGC144T170R2C Datasheets (3)

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    SIGC144T170R2C Infineon Technologies IGBT Chips; Package: --; Technology: Low Loss IGBT 2; VDS (max): 1,700.0 V; IC (max): 75.0 A; VCE(sat) (max): 3.2 V; VGE(th) (min): 4.5 V; Original PDF
    SIGC144T170R2C Infineon Technologies SIGC144T170R2C, 1700V, 75A Original PDF
    SIGC144T170R2C Infineon Technologies IGBT Chip in NPT-Technology Original PDF

    SIGC144T170R2C Datasheets Context Search

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    transistors ai 757

    Abstract: SIGC144T170R2C 1136 GE
    Text: Preliminary SIGC144T170R2C IGBT Chip in NPT-technology C FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC144T170R2C 1700V This chip is used for: • chip only


    Original     		SIGC144T170R2C Q67041-A4696A001 7361M, transistors ai 757 SIGC144T170R2C 1136 GE PDF

    Untitled

    Abstract: No abstract text available
    Text: SIGC144T170R2C IGBT Chip in NPT-technology Features: • 1700V NPT technology • 280 µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • chip only C Applications: • drives G Chip Type VCE


    Original     		SIGC144T170R2C L7361M, PDF

    Untitled

    Abstract: No abstract text available
    Text: SIGC144T170R2C IGBT Chip in NPT-technology Features: • 1700V NPT technology  280µm chip  short circuit prove  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Chip Type VCE SIGC144T170R2C 1700V


    Original     		SIGC144T170R2C SIGC144T170R2C L7361M, PDF

    transistors ai 757

    Abstract: AI 757 AI 757 datasheet transistor ai 757 SIGC144T170R2C 1136 GE
    Text: SIGC144T170R2C IGBT Chip in NPT-technology C FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC144T170R2C 1700V This chip is used for: • chip only G Applications:


    Original     		SIGC144T170R2C Q67041-A4696A001 7361M, transistors ai 757 AI 757 AI 757 datasheet transistor ai 757 SIGC144T170R2C 1136 GE PDF

    Untitled

    Abstract: No abstract text available
    Text: SIGC144T170R2C IGBT Chip in NPT-technology C FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC144T170R2C 1700V This chip is used for: • chip only G Applications:


    Original     		SIGC144T170R2C Q67041-A4696A001 7361M, PDF

    A001

    Abstract: SIGC144T170R2C
    Text: Preliminary SIGC144T170R2C IGBT Chip in NPT-technology C FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC144T170R2C 1700V This chip is used for: • chip only


    Original     		SIGC144T170R2C Q67041-A4696sawn 7361M, A001 SIGC144T170R2C PDF

    SIGC144T170R2C

    Abstract: No abstract text available
    Text: SIGC144T170R2C IGBT Chip in NPT-technology Features: • 1700V NPT technology • 280 µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • chip only C Applications: • drives G Chip Type VCE


    Original     		SIGC144T170R2C L7361M, SIGC144T170R2C PDF