SIGC121T120R2C Search Results

SIGC121T120R2C Price and Stock

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Infineon Technologies AG SIGC121T120R2CLX1SA5 IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC121T120R2CLX1SA5)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIGC121T120R2CLX1SA5	Waffle Pack			972	1 - 10 - 100 - 1000 $12.2122 10000 $11.36674	Buy Now
EBV Elektronik	SIGC121T120R2CLX1SA5			71 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SIGC121T120R2CSX1SA1 IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC121T120R2CSX1SA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIGC121T120R2CSX1SA1	Waffle Pack			972	1 - 10 - 100 - 1000 $12.2122 10000 $11.36674	Buy Now
EBV Elektronik	SIGC121T120R2CSX1SA1			53 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SIGC121T120R2CSYX1SA1 IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC121T120R2CSYX1SA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIGC121T120R2CSYX1SA1	Waffle Pack			32	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SIGC121T120R2CX1SA5 IGBT CHIPS (Alt: SP000012015)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
EBV Elektronik	SIGC121T120R2CX1SA5			53 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIGC121T120R2C Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIGC121T120R2C		Infineon Technologies	IGBT Chip in NPT-Technology		Original	PDF
SIGC121T120R2C		Infineon Technologies	SIGC121T120R2C, 1200V, 75A		Original	PDF
SIGC121T120R2CL		Infineon Technologies	IGBT Chip in NPT-Technology		Original	PDF
SIGC121T120R2CL		Infineon Technologies	SIGC121T120R2CL, 1200V, 75A		Original	PDF
SIGC121T120R2CS		Infineon Technologies	IGBT Chip in NPT-Technology		Original	PDF
SIGC121T120R2CS		Infineon Technologies	SIGC121T120R2CS, 1200V, 75A		Original	PDF

SIGC121T120R2C Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
FS75R12KS4 Abstract: SIGC121T120R2CS infineon igbt die 1200V Text: SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2CS 1200V	Original	SIGC121T120R2CS SIGC121T120R2CS Q67050A4074-A003 7171-T, FS75R12KS4 infineon igbt die 1200V	PDF
75GD120DN2 Abstract: SIGC121T120R2C Text: Preliminary SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V	Original	SIGC121T120R2C SIGC121T120R2C 75GD120DN2 Q67041sawn A4682-A003 7171-M, 75GD120DN2	PDF
Untitled Abstract: No abstract text available Text: Preliminary SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2CS 1200V	Original	SIGC121T120R2CS SIGC121T120R2CS Q67050A4074-A003 7171-T,	PDF
Untitled Abstract: No abstract text available Text: SIGC121T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE This chip is used for: • power module	Original	SIGC121T120R2CL BSM75GD120DLC SIGC121T120R2CL Q67041A4686-A003 7171-P,	PDF
Untitled Abstract: No abstract text available Text: SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2CS 1200V	Original	SIGC121T120R2CS Q67050A4074-A003 SIGC121T120R2CS 7171-T,	PDF
Untitled Abstract: No abstract text available Text: SIGC121T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE This chip is used for: • power module	Original	SIGC121T120R2CL BSM75GD120DLC SIGC121T120R2CL Q67041A4686-A003 7171-P,	PDF
Untitled Abstract: No abstract text available Text: SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V	Original	SIGC121T120R2C SIGC121T120R2C 75GD120DN2 Q67041A4682-A003 7171-M,	PDF
75GD120DN2 Abstract: SIGC121T120R2C Text: SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V	Original	SIGC121T120R2C SIGC121T120R2C 75GD120DN2 Q67041A4682-A003 7171-M, 75GD120DN2	PDF
BSM75GD120DLC Abstract: SIGC121T120R2CL Text: Preliminary SIGC121T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE This chip is used for: • power module	Original	SIGC121T120R2CL BSM75GD120DLC SIGC121T120R2CL Q67041A4686-A003 7171-P, BSM75GD120DLC	PDF
75GD120DN2 Abstract: SIGC121T120R2C Text: Preliminary SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V	Original	SIGC121T120R2C SIGC121T120R2C 75GD120DN2 Q67041A4682-A003 7171-M, 75GD120DN2	PDF
75GD120DN2 Abstract: BSM75GD120DN2 Text: SIGC121T120R2C IGBT Chip in NPT-technology Features: • 1200V NPT technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling  integrated gate resistor Chip Type VCE SIGC121T120R2C 1200V This chip is used for:	Original	SIGC121T120R2C 75GD120DN2 SIGC121T120R2C L7171MM, BSM75GD120DN2	PDF
BSM75GD120DLC Abstract: SIGC121T120R2CL Text: Preliminary SIGC121T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE This chip is used for: • power module	Original	SIGC121T120R2CL BSM75GD120DLC SIGC121T120R2CL Q67041sawn A4686-A003 7171-P, BSM75GD120DLC	PDF
SIGC121T120R2CS Abstract: infineon igbt die 1200V Text: Preliminary SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2CS 1200V	Original	SIGC121T120R2CS SIGC121T120R2CS Q67050sawn A4074-A003 7171-T, infineon igbt die 1200V	PDF
infineon igbt die 1200V Abstract: SIGC121T120R2CS Text: Preliminary SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2CS 1200V	Original	SIGC121T120R2CS SIGC121T120R2CS Q67050A4074-A003 7171-T, infineon igbt die 1200V	PDF