isl 6251 schematic
Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
Text: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.
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Q62702-A772
Q62702-A731
Q62702-A773
OT-23
isl 6251 schematic
smd transistor A4S
Siemens OFW 361
smd marking b4h
6Bs smd transistor
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
Transistors Diodes smd A7H
a4s smd transistor
npn transistor ss100
smd transistor 6Bs
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siemens dioden
Abstract: No abstract text available
Text: SIEMENS Symbol MULTILED 2.5 mm x 5 mm, Partly Diffused LU B371 Besondere Merkmale nicht eingefärbtes, teilweise diffuses Gehäuse Lötspieße im 2.54 mm Raster hohe Signalwirkung durch Farbwechsel der LED möglich Anzeige unterschiedlicher Betriebszustände durch Farb
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Untitled
Abstract: No abstract text available
Text: SIEMENS 'ee/im Oft SAB 7201A Multi-Protocol ° Serial Communication Controller • Tw o independent full-duplex serial channels • Four independent DM A channels for transmitted/ received data for both serial inputs/outputs • Modem control signals • Variable softw are-program m able data rate, up to
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201A-P
Q67120-P143
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Untitled
Abstract: No abstract text available
Text: SIEMENS Symbol MULTILED 2.5 mm x 5 mm, Partly Diffused LU B371 Besondere M erkmale • • • • nicht eingefärbtes, teilw eise diffuses Gehäuse Lötspieße im 2.54 mm Raster hohe Signalwirkung durch Farbwechsel der LED möglich Anzeige unterschiedlicher Betriebszustände durch Farb
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fl235bGS
GEXQ6721
235b05
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Untitled
Abstract: No abstract text available
Text: faOE D • a23SbOS D0Mb353 Sé? B S I E G SIEMENS -T'*t- S 3 PHOTOTRANSISTOR OPTOCOUPLER SIEMENS AKTIENGESELLSCHAF FEATURES • IL2B P a c k a g e D im e n s io n s in In c h e s m m F iv e C T R S e le c t io n s • H ig h C o lle c t o r - E m it t e r V o lt a g e , B V CEO= 5 0 V
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a23SbOS
D0Mb353
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siemens stu
Abstract: TO-220-Anschl DIN iec 286-3 part 1 din IEC Teil 2-20 Siemens Halbleiter
Text: SIEMENS 1 Montagehinweise Je d e r S IP M O S -H a lb le ite r ist durch die a u fgestem p elte Typen- und P o la ritä tsb e zeichn ung eind eutig ge ken nze ichn et. Die E inbaulage der H a lbleite r ist beliebig. 1.1 Bedrahtete Halbleiter im TO-2181
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T0-220-Geh
O-218/TO-220Anschl
T0-220/
O-218
T0-220
siemens stu
TO-220-Anschl
DIN iec 286-3 part 1
din IEC Teil 2-20
Siemens Halbleiter
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 514100BJ/BJL -50/-60/-70 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 'C operating temperature • Fast Page Mode Operation • Performance: f R AC -50 -60 -70
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514100BJ/BJL
P-SOJ-26/20-5
5141OOBJ/BJL-50/-60/-70
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M x 16-Bit Dynamic RAM HYB 3164165AT L -40/-50/-60 (8k, 4k & 2k-Refresh, EDO-version) HYB 3165165AT(L) -40/-50/-60 HYB 3166165AT(L) -40/-50/-60 P re lim in ary In fo rm atio n • 4 194 304 words by 16-bit organization • 0 to 70 "C operating temperature
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16-Bit
3164165AT
3165165AT
3166165AT
165AT
P-TSOPII-50
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PP-02-47
Abstract: No abstract text available
Text: SIEMENS 4M X 16-Bit Dynamic RAM 4k & 8k Refresh HYB 3164160T -50/-60 HYB 3165160T -50/-60 Prelim inary Inform ation • 4 194 304 words by 16-bit organization • 0 to 70 'C operating temperature ■ Fast access and cycle time RAS access time: 50 ns (-50 version)
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16-Bit
3164160T
3165160T
3164160T-50)
3164160T-60)
3165160T-50)
3165160T-60)
read-1-1/016
160T-50/-60
PP-02-47
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Q67100-Q765
Abstract: 514100
Text: SIE M E N S 4 M x 1-Bit Dynamic RAM Low Power 4 M x 1-Bit Dynamic RAM HYB 514100BJ/BT-60/-70/-80 HYB 514100BJL/BTL-60/-70/-80 A d v a n c e d In fo rm a tio n • 4 194 304 words by 1-bit organization • 0 to 70 ’C operating temperature • Fast access and cycle time
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514100BJ/BT-60/-70/-80
514100BJL/BTL-60/-70/-80
HYB514100BJ/BT/BJL/BTL
Q67100-Q765
514100
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M x 16-Bit Dynamic RAM HY b 3164165BT L -40/-50/-60 (8k, 4k & 2k Refresh, EDO-version) HYB 3165165BT(L) -40/-50/-60 HYB 3166165BT(L) -40/-50/-60 Preliminary Information • 4 194 304 words by 16-bit organization • 0 to 70 °C operating temperature
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16-Bit
3164165BT
3165165BT
3166165BT
HYB3164
165BT
P-TSOPII-50
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Untitled
Abstract: No abstract text available
Text: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature
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5116405BJ-50/-60
5117405BJ-50/-60
3116405BJ/BT
3117405BJ/BT-50/-60
-5J-26/24-1
300mil)
405BJ-50/-60
405BJ/BT
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3V 4M X 4-Bit EDO-Dynamic RAM 2k & 4k-Refresh HYB 3116405BJ/BT L -50/-60/-70 HYB 3117405BJ/BT(L) -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance ÍRAC RAS access time
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3116405BJ/BT
3117405BJ/BT
3117405BJ/BT-50)
3117405BJ/BT-60)
3117405BJ/BT-70)
405BJ/BT
P-SOJ-26/24-1
85max
6235bD5
00flb
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bt60
Abstract: siemens im 304 Q1050
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 HYB 5116400BT -50/-60/-70 Advanced Inform ation • 4 194 304 words by 4-bit organization • 0 to 70 C operating tem perature • Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version)
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5116400BJ
5116400BT
bt60
siemens im 304
Q1050
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 HYB 5117400BT -50/-60/-70 Advanced Inform ation • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns -50 version
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5117400BJ
5117400BT
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L110i
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit Dynamic RAM 3.3 V, 4k-refresh HYB 3116400BJ/BT -50/-60/-70 P re lim in a ry In fo rm a tio n • 4 194 304 w o rd s by 4 -b it o rg a n iz a tio n O u tp u t u n la tch e d at cycle end a llo w s tw o- • 0 to 70 C o p e ra tin g te m p e ra tu re
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3116400BJ/BT
L110i
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 16-Bit Dynamic RAM 4k & 8k Refresh, EDO-version hYB 3164165T(L) -50/-60 h YB 3165165T(L) -50/-60 Preliminary Information • • • • • • • • • • • • 4 194 304 words by 16-bit organization 0 to 70 "C operating temperature
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16-Bit
3164165T
3165165T
HYB3164
P-TSOPII-54-1
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m8334
Abstract: No abstract text available
Text: fl235bOS D037b47 7 SIEG M K T Capacitors □ SIEMENS A K T I E N G E S E L L S C H A F M7E D B 32520 .B 3 2 5 2 9 ft~OS l7-o M etalized polyester film capacitors in accordance w ith D IN 44112 VR = 6 3 to 6 3 0 Vdc W ith quality a sse ssm e n t according to C E C C 30401-043, edition 1, June 1983.
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fl235bOS
D037b47
m8334
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bt 33 f
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit Dynamic RAM 3.3 V, 2k-refresh HYB 3117400BJ/BT -50/-60/-70 Prelim inary Inform ation 4 194 304 words by 4-bit organization 0 to 70 ‘C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)
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3117400BJ/BT
bt 33 f
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 32-Bit Dynamic RAM Module HYM 324020S/GS-50/-60 Advanced Information • 4 194 304 words by 32-bit organization alternative 8 388 608 words by 16-bit • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time
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32-Bit
324020S/GS-50/-60
16-bit)
324020S/GS-50)
324020S/GS-60)
L-SIM-72-12
324020S/GS-50/-60
32-Bit
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Marking A2t smd
Abstract: No abstract text available
Text: SIEMENS 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 314100BJ/BJL -50/-60/-70 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 "C operating temperature • Fast Page Mode Operation • Performance: -50 -60 -70 fRAC
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314100BJ/BJL
P-SOJ-26/20-5
3141OOBJ/BJL-50/-60/-70
1757-oaD
Marking A2t smd
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance: ^RAC RAS access time -50 -60 -70 50 60 70 ns ns fcAC CAS access time 13 15 20 ^AA
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5117400BJ
5117400BJ-50/-60/-70
P-SOJ-26/24
85max
fl23Sb05
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 36-Bit EDO-DRAM Module HYM 364035S/GS-60 Advanced Information • 4 194 304 words by 36-Bit organization • Fast access and cycle time 60 ns RAS access time 15 ns CAS access time 104 ns cycle time • Hyper page mode EDO capability 25 ns cycle time
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36-Bit
364035S/GS-60
L-SIM-72)
L-SIM-72-13
364035S/GS-60
75x127
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smd d9d
Abstract: D9D smd
Text: SIEMENS 4M X 72-Bit Dynamic RAM Module ECC - Module HYM 72V4000GS-50/-60 HYM 72V4010GS-50/-60 Advanced Inform ation • 4 194 304 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time
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72-Bit
72V4000GS-50/-60
72V4010GS-50/-60
L-DIM-168-5
72V4000/10GS-50/-60
72-ECC
smd d9d
D9D smd
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