HYB5116400BJ
Abstract: HYB5116400BT
Text: 4M x 4-Bit Dynamic RAM HYB5116400BJ -50/-60/-70 5116400BT -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
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HYB5116400BJ
HYB5116400BT
5116400BJ/BT-50/-60/-70
P-SOJ-26/24
GPJ05628
GPX05857
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q207
Abstract: 74ABT244
Text: 4M x 72-Bit Dynamic RAM Module ECC - Module HYM 724000GS-50/-60 HYM 724010GS-50/-60 Preliminary Information • 4 194 304 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time
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72-Bit
724000GS-50/-60
724010GS-50/-60
HYM724000/10GS-50/-60
L-DIM-168-6
4Mx72
DM168-6
q207
74ABT244
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bt60
Abstract: siemens im 304 Q1050
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 HYB 5116400BT -50/-60/-70 Advanced Inform ation • 4 194 304 words by 4-bit organization • 0 to 70 C operating tem perature • Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version)
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5116400BJ
5116400BT
bt60
siemens im 304
Q1050
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 HYB 5116400BT -50/-60/-70 Advanced Inform ation • • • • • 4 194 304 w ords by 4-bit organization 0 to 70 'C operating tem perature Fast access and cycle time RAS access time: 50 ns -50 version
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5116400BJ
5116400BT
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Untitled
Abstract: No abstract text available
Text: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70
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1000BJ-50
1000BJ-60
1000BJ-70
1000BJL-50
1000BJL-60
1000BJL-70
514256B-50
514256B-60
514256B-70
514256BJ-50
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Untitled
Abstract: No abstract text available
Text: HM5116400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-367A Z Rev. 1.0 Nov. 2, 1995 Description The Hitachi HM5116400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116400B offers Fast Page Mode
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HM5116400B
304-word
ADE-203-367A
mW/385
mW/358
HM511640OB
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Untitled
Abstract: No abstract text available
Text: ADE-367 Z HM5116400B/BL Series 4,194,304-word x 4-bit Dynamic Random Access Memory Preliminary L I IT A O H I <11 I M O m T h e H ita c h i H M 5 1 1 6 4 0 0 B /B L is a C M O S dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology
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ADE-367
HM5116400B/BL
304-word
5116400B/BL
5116400BS-6
5116400BS-7
5116400BS-8
5116400BLS-6
5116400BLS-7
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511000BJ-70
Abstract: Q67100-Q1101 514256BJ-70 361120S-70 5118165BSJ-60 5117405BJ-60 Q67100-Q727 hyb 511
Text: SIEM EN S Summary of Types in Alphanumerical Order Summary of Types in Alphanumerical Order Type Memory Components HYB 3116160BSJ-50 HYB 3116160BSJ-60 HYB 3116160BSJ-70 HYB 3116400BJ-50 HYB 3116400BJ-60 HYB 3116400BJ-70 HYB 3116400BT-50 HYB 3116400BT-60 HYB 3116400BT-70
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3116160BSJ-50
3116160BSJ-60
3116160BSJ-70
3116400BJ-50
3116400BJ-60
3116400BJ-70
3116400BT-50
3116400BT-60
3116400BT-70
3117400BJ-50
511000BJ-70
Q67100-Q1101
514256BJ-70
361120S-70
5118165BSJ-60
5117405BJ-60
Q67100-Q727
hyb 511
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