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    SIEGET 45 Search Results

    SIEGET 45 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIEGET 45 Siemens NPN Silicon RF Transistor Original PDF

    SIEGET 45 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFP520

    Abstract: 702 Z TRANSISTOR SIEMENS BFP520
    Text: Application Note No. 051 Discrete & RF Semiconductors R. Sedlmaier, HL HF AT SIEGET45 - Low Noise Amplifier with BFP520 Transistor at 1.9 GHz This application note describes an example of a Low Noise Amplifier with the BFP520 5th Generation, SOT343 SIEGET 45-Line. Improved performance in Gain


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    PDF BFP520 OT343) 45-Line. 15dBm) BFP520 702 Z TRANSISTOR SIEMENS BFP520

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 45 BFP540F NPN Silicon RF Transistor Preliminary data XYs  For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gma = 20 dB 2 4 Noise Figure F = 0.9 dB 1  Gold metallization for high reliability  SIEGET  45 - Line TSFP-4 to p v ie w !


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    PDF BFP540F Dec-07-2001

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 45 BFP 540F NPN Silicon RF Transistor Preliminary data XYs  For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gms = 21 dB Noise Figure F = 0.9 dB 2 4 1  Gold metallization for high reliability  SIEGET  45 - Line TSFP-4 to p v ie w !


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    PDF Jun-09-2000

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability 2 • SIEGET  45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF VPS05605 Q62702-F1818 OT-343 50Ohm -j100

    BFP-540

    Abstract: VPS05605 transistor BO 540 Transistor MJE 540
    Text: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3  For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB  Gold metallization for high reliability 2  SIEGET  45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF VPS05605 OT-343 50Ohm -j100 Jun-09-2000 BFP-540 VPS05605 transistor BO 540 Transistor MJE 540

    VPS05605

    Abstract: No abstract text available
    Text: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3  For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB  Gold metallization for high reliability 2  SIEGET  45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF VPS05605 OT-343 50Ohm -j100 Oct-27-1999 VPS05605

    marking BFP

    Abstract: No abstract text available
    Text: SIEGET 45 BFP 540ECSP NPN Silicon RF Transistor Preliminary data  For highest gain low noise amplifier XY at 1.8 GHz 4 Outstanding Gms = 21 dB 3 Noise Figure F = 0.9 dB 1  Gold metallization for high reliability  SIEGET  45 GHz fT- Line 2 •=Chip Scale Package


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    PDF 540ECSP Aug-23-2000 marking BFP

    BFP540

    Abstract: INFINEON application note
    Text: SIEGET 45 BFP540 NPN Silicon RF Transistor Preliminary data 3  For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB  Gold metallization for high reliability 2  SIEGET  45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF BFP540 VPS05605 OT343 50Ohm -j100 Aug-09-2001 BFP540 INFINEON application note

    BFP540F

    Abstract: No abstract text available
    Text: SIEGET 45 BFP540F NPN Silicon RF Transistor Preliminary data XYs  For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gma = 20 dB 2 4 Noise Figure F = 0.9 dB 1  Gold metallization for high reliability  SIEGET  45 - Line TSFP-4 to p v ie w !


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    PDF BFP540F Aug-09-2001 BFP540F

    microwave transistor siemens bfp 420

    Abstract: 4144 lH21l BFP450 siemens MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT doppler radar SMX-1 BFP450 transistor s parameters noise sot-343 as
    Text: APPLICATIONS DISCRETE SEMICONDUCTORS Jakob Huber ● Gerhard Lohninger RF measurements on SIEGET bipolar transistors: Predicting performance straight from the wafer Multistage measurements are intended to ensure unrestricted operation of RF transistors. But until recently,


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    bfp540

    Abstract: INFINEON ATS BGA420
    Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)


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    PDF BFP540 OT343 bfp540 INFINEON ATS BGA420

    marking AUs

    Abstract: BFP420F BFP540FESD amplifier marking code a
    Text: BFP540FESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 1 typical value 1000 V HBM • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • SIEGET  45 - Line • Pb-free (ROHS compliant) package 1)


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    PDF BFP540FESD marking AUs BFP420F BFP540FESD amplifier marking code a

    SOT363-Package

    Abstract: BGA428 SOT-363 dc voltage step up amplifier circuit AN062 BGA428 amplifier transistor application based circuit amplifier TRANSISTOR 12 GHZ
    Text: Application Note No. 062 Silicon Discretes A Low Parts Count Low Noise Amplifier for GPS Applications using BGA428 Features • Two-stage Low Noise Amplifier • SIEGET 45-Technology with 45 GHz f T • Small outline SOT363-Package • Low Noise Figure: 1.4 dB at 1.575 GHz


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    PDF BGA428 45-Technology OT363-Package BGA428 45-Technology. AN062 SOT363-Package BGA428 SOT-363 dc voltage step up amplifier circuit AN062 amplifier transistor application based circuit amplifier TRANSISTOR 12 GHZ

    microwave transistor siemens bfp 420

    Abstract: RF Transistors smd transistor chart smd transistor NJ transistor R 405 doppler radar SMX-1 AG SMD TRANSISTOR Siemens transistors rf SIEMENS MICROWAVE RADIO 8 GHz
    Text: APPLICATIONS DISCRETE SEMICONDUCTORS Kurt Brenndörfer ● Gerhard Lohninger ● Lothar Musiol ● Jakob Huber Fourth-generation bipolar RF transistors with 25 GHz transit frequency: SIEGET heads the pack Since the very beginning of RF transistor development,


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    RF NPN POWER TRANSISTOR C 10-12 GHZ

    Abstract: BFP540ESD BGA420
    Text: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier • Excellent ESD performance 3 2 4 typical value 1000 V HBM 1 • Outstanding G ms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line


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    PDF BFP540ESD OT343 RF NPN POWER TRANSISTOR C 10-12 GHZ BFP540ESD BGA420

    Untitled

    Abstract: No abstract text available
    Text: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 typical value 1000 V HBM 1 • Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line


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    PDF BFP540ESD OT343

    transistor b 1238

    Abstract: Q62702-F1794 transistor bf 520 transistor bfp 520
    Text: SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz 2 • Transition frequency fT = 45 GHz 1


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    PDF VPS05605 Q62702-F1794 OT-343 50Ohm 45GHz -j100 Sep-09-1998 transistor b 1238 Q62702-F1794 transistor bf 520 transistor bfp 520

    INFINEON ATS

    Abstract: BFP540 BGA420
    Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)


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    PDF BFP540 OT343 INFINEON ATS BFP540 BGA420

    Untitled

    Abstract: No abstract text available
    Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)


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    PDF BFP540 OT343

    BFP540

    Abstract: No abstract text available
    Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB Noise Figure F = 0.9 dB 2 • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF BFP540 VPS05605 OT343 50Ohm -j100 Jan-28-2004 BFP540

    BFP540

    Abstract: INFINEON ATS BGA420 Transistor BFP540
    Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding G ms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line ESD Electrostatic discharge sensitive device, observe handling precaution!


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    PDF BFP540 OT343 BFP540 INFINEON ATS BGA420 Transistor BFP540

    BFP540ESD

    Abstract: BGA420
    Text: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 typical value 1000 V HBM 1 • Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line


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    PDF BFP540ESD OT343 10may BFP540ESD BGA420

    Untitled

    Abstract: No abstract text available
    Text: SIEGET@45 BFP 540 Infineon technologies NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan
    PDF Q62702-F1818 OT-343

    amplifier siemens sot-363

    Abstract: BFS480 HF-transistoren SOT-363 fg 420 sot-363 SOT343
    Text: Transistoren Transistors SIEGET -HF-BIPOLAR-Transistoren SIEGET^-RF-BIPOLAR-Transistors Type N = NPN P = PNP Maximum Ratings Characteristics r A = 25 °C Package G Fcèo V 1F min k mA -f*tot h mW GHz dB k mA Vce f V MHz dB G ms k mA Vce / V MHz Lead Code


    OCR Scan
    PDF OT-343 OT-143 fl235b05 amplifier siemens sot-363 BFS480 HF-transistoren SOT-363 fg 420 sot-363 SOT343