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Vishay Siliconix SIE874DF-T1-GE3 MOSFET N-CH 20V 60A 10POLARPAK
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DigiKey	SIE874DF-T1-GE3	Cut Tape			1	1 $3.23 10 $3.23 100 $3.23 1000 $3.23 10000 $3.23	Buy Now
	SIE874DF-T1-GE3	Digi-Reel			1	1 $3.23 10 $3.23 100 $3.23 1000 $3.23 10000 $3.23	Buy Now
	SIE874DF-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SIE874DF-T1-GE3 MOSFETs 20V 60A N-CH MOSFET
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Mouser Electronics	SIE874DF-T1-GE3					1 - 10 - 100 - 1000 - 10000 $1.32	Get Quote

SIE874DF Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIE874DF-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 60A POLARPAK		Original	PDF

SIE874DF Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SiE874DF Abstract: MOSFET 2033 Text: New Product SiE874DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for	Original	SiE874DF 2002/95/EC 18-Jul-08 MOSFET 2033	PDF
55472 Abstract: AN609 SiE874DF 28446 Text: SiE874DF_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	SiE874DF AN609, 09-Sep-09 55472 AN609 28446	PDF
SiE874DF Abstract: No abstract text available Text: SPICE Device Model SiE874DF Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiE874DF 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: New Product SiE874DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for	Original	SiE874DF 2002/95/EC 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs Pola rPA K M O S F ET s features • Leadframe and plastic encapsulation construction - Provides better die protection and reliability - Easier manufacturing handling - Fixed footprint and pad layout independent of die size, ≤ 100 V	Original	VMN-PT0052-1002	PDF
Untitled Abstract: No abstract text available Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating	Original	VMN-PT0105-1007	PDF
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477	PDF