SIC01M-18
Abstract: No abstract text available
Text: SIC01M-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01M-18
SIC01M-18
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uvc photodiode
Abstract: uv sensor SIC01M silicon carbide TO-39, UVC
Text: UVC-selective SiC based UV sensor SIC01M-C Features • UVC Photodiode with medium-sized photoactive area • Good compromise between signal strength and price • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294
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SIC01M-C
uvc photodiode
uv sensor
SIC01M
silicon carbide
TO-39, UVC
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SIC01S-HT
Abstract: silicon carbide UV photodiode
Text: Ultraviolet selective SiC based UV sensor SIC01S-HT Features • Operating Temperature up to 170°C • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness •
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SIC01S-HT
SIC01S-HT
silicon carbide
UV photodiode
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SIC01S-B18
Abstract: No abstract text available
Text: SIC01S-B18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01S-B18
SIC01S-B18
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SIC01
Abstract: "vlsi technology" on 5718 ICC05
Text: SIC01 SERIES 70mil 1.778mm SHRINK IC SOCKET SUMMARY As IC electronic packaging progresses towards further LSI/VLSI technology, KEL Corp. has met this challenge by developing a new 70mil Shrink IC socket. Kel has again incorporated a high reliability and quality
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SIC01
70mil
778mm)
70mil
ICC05
SIC01
"vlsi technology"
on 5718
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uv flame sensor
Abstract: FLAME SENSOR UV ultraviolet sensor uv photodiode sic01m ultraviolet sensor flame cree Sic uv sensor Ultraviolet SIC01M
Text: Ultraviolet selective SiC based UV sensor SIC01M – LENS Features • Broad band UVA-UVB-UVC photodiode for weak and directed radiation • Perfectly suited for flame sensing • Silicon Carbide based chip for extreme low noise and dark current • Chip dimensions of 0.5 x 0.5 mm2 with 0.22 mm2 active area
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SIC01M
S280nm
S400nm
uv flame sensor
FLAME SENSOR UV
ultraviolet sensor
uv photodiode sic01m
ultraviolet sensor flame
cree Sic
uv sensor
Ultraviolet
SIC01M
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TO-39, UVC
Abstract: SIC01L-5-C uvc photodiode uv sensor silicon carbide
Text: UVC-selective SiC based UV sensor SIC01L-5-C Features • UVC Photodiode with large photoactive area • Optimally suited for weak UVC intensities • Silicon Carbide based chip for extreme irradiation hardness • Spectral response in accordance with DVGW W 294
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SIC01L-5-C
TO-39, UVC
SIC01L-5-C
uvc photodiode
uv sensor
silicon carbide
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SIC01S-18ISO90
Abstract: SiC Photodiodes
Text: SIC01S-18ISO90 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC
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SIC01S-18ISO90
SIC01S-18ISO90
SiC Photodiodes
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SIC01L-5
Abstract: No abstract text available
Text: SIC01L-5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01L-5
SIC01L-5
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SIC01L-C5
Abstract: No abstract text available
Text: SIC01L-C5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01L-C5
SIC01L-C5
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Untitled
Abstract: No abstract text available
Text: SIC01D-B18 rev.6.1 04/15 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01D-B18
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SIC01M-5LENS
Abstract: No abstract text available
Text: SIC01M-5LENS V 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01M-5LENS
SIC01M-5LENS
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uv photodiode SIC01L-18
Abstract: SIC01L-18 cree ultraviolet uv sensor
Text: Ultraviolet selective SiC based UV sensor SIC01L-18 Features • Broad band UVA-UVB-UVC photodiode in TO18 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material
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SIC01L-18
S280nm
S400nm
uv photodiode SIC01L-18
SIC01L-18
cree ultraviolet
uv sensor
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SIC01S-C18
Abstract: No abstract text available
Text: SIC01S-C18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01S-C18
SIC01S-C18
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SIC01S-18
Abstract: No abstract text available
Text: SIC01S-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01S-18
SIC01S-18
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SIC01XL-5
Abstract: No abstract text available
Text: SIC01XL-5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01XL-5
SIC01XL-5
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ultraviolet sensors
Abstract: uv sensor ultraviolet sensor uvb sensor
Text: Ultraviolet selective SiC based UV sensor SIC01S Features • • • • • • Silicon Carbide based chip for extreme irradiation hardness Intrinsic visible blindness due to wide-bandgap semiconductor material TO-18 metal package with 0,054 mm2 active chip area
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SIC01S
ultraviolet sensors
uv sensor
ultraviolet sensor
uvb sensor
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uv sensor
Abstract: SIC01L-5 SUN SENSOR silicon carbide
Text: Ultraviolet selective SiC based UV sensor SIC01L-5 Features • Broad band UVA-UVB-UVC photodiode in TO5 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material
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SIC01L-5
S280nm
S400nm
uv sensor
SIC01L-5
SUN SENSOR
silicon carbide
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Untitled
Abstract: No abstract text available
Text: ROITHNER LASERTECHNIK PRESENTS. NEW HIGH POWER UV-LED NS375L-ERLM UV-LED, peak wavelength 375 nm - 380 nm, 19.0 - 26.0 mW at 20 mA, clear 5 mm UV resistant epoxy forward voltage typ. 3.6 V, FWHM typ. 15 nm sample price: EUR 10.86 get datasheet price list page 37
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NS375L-ERLM
SIC01L4-5
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MSM 7225
Abstract: MOLEX 10PIN SD CARD TT 2146 female PCB connector 9pin d-sub 15PIN D-SUB CONNECTORS 68pin TO 50 PIN SCSI connector 50 pin (2x25), 2mm pitch header connectors 50PIN D-SUB CONNECTORS jst phr-6 68pin SCSI connector
Text: AUK Complete Cross Reference Competitor Part No. SLM-132-01-G-S SAMTEC SLM-140-01-G-S SAMTEC SLM-150-01-G-S SAMTEC SLM-103-01-G-S SAMTEC SLM-104-01-G-S SAMTEC SLM-106-01-G-S SAMTEC SLM-122-01-G-S SAMTEC SLM-104-01-G-D SAMTEC SLM-105-01-G-D SAMTEC SLM-106-01-G-D SAMTEC
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SLM-132-01-G-S
SLM-140-01-G-S
SLM-150-01-G-S
SLM-103-01-G-S
SLM-104-01-G-S
SLM-106-01-G-S
SLM-122-01-G-S
SLM-104-01-G-D
SLM-105-01-G-D
SLM-106-01-G-D
MSM 7225
MOLEX 10PIN SD CARD
TT 2146
female PCB connector 9pin d-sub
15PIN D-SUB CONNECTORS
68pin TO 50 PIN SCSI connector
50 pin (2x25), 2mm pitch header connectors
50PIN D-SUB CONNECTORS
jst phr-6
68pin SCSI connector
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smd diode UJ 64 A
Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.
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RLU4116E,
RLT390-50CMG,
RLT395-50CMG,
RLT400-50CMG,
TH06-1W,
ATU61938489,
AT1212
AT3112
smd diode UJ 64 A
SLD3237VFR
20/SPL1550-10-9-PD
SLD3237VF
smd diode UM 08
smd diode UM
RLCD-M66H-750
RLT905-30G
SLD3236VF
RLT6650GLI
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