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    SI9945 Price and Stock

    Vishay Siliconix SI9945BDY-T1-GE3

    MOSFET 2N-CH 60V 5.3A 8SOIC
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    DigiKey SI9945BDY-T1-GE3 Reel 22,500 2,500
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    SI9945BDY-T1-GE3 Cut Tape 1,985 1
    • 1 $1.4
    • 10 $0.884
    • 100 $0.5865
    • 1000 $0.41717
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    SI9945BDY-T1-GE3 Digi-Reel 1
    • 1 $1.4
    • 10 $0.884
    • 100 $0.5865
    • 1000 $0.41717
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    RS SI9945BDY-T1-GE3 Bulk 5,000 72 Weeks 2,500
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    Bristol Electronics SI9945BDY-T1-GE3 55
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    Quest Components SI9945BDY-T1-GE3 39
    • 1 $2.125
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    • 100 $1.7
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    UMW SI9945BDY

    MOSFET 2N-CH 60V 5.3A 8SOIC
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    DigiKey SI9945BDY Digi-Reel 1
    • 1 $1.05
    • 10 $0.655
    • 100 $0.4286
    • 1000 $0.29939
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    SI9945BDY Cut Tape 1
    • 1 $1.05
    • 10 $0.655
    • 100 $0.4286
    • 1000 $0.29939
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    SI9945BDY Reel 1
    • 1 $1.05
    • 10 $0.655
    • 100 $0.4286
    • 1000 $0.4286
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    Vishay Siliconix SI9945AEY-T1

    MOSFET 2N-CH 60V 3.7A 8SOIC
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    DigiKey SI9945AEY-T1 Reel 2,500
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    Vishay Intertechnologies SI9945BDY-T1-GE3

    DUAL N-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SI9945BDY-T1-GE3)
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    Avnet Americas SI9945BDY-T1-GE3 Reel 17,500 2,500
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    SI9945BDY-T1-GE3 Reel 2,500
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    Verical SI9945BDY-T1-GE3 85,000 2,500
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    Arrow Electronics SI9945BDY-T1-GE3 85,000 9 Weeks 2,500
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    Newark SI9945BDY-T1-GE3 Cut Tape 34,036 5
    • 1 $0.923
    • 10 $0.768
    • 100 $0.614
    • 1000 $0.614
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    SI9945BDY-T1-GE3 Reel 10,000 2,500
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    SI9945BDY-T1-GE3 Reel 2,500
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    Bristol Electronics SI9945BDY-T1-GE3 1,330
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    TTI SI9945BDY-T1-GE3 Reel 82,500 2,500
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    SI9945BDY-T1-GE3 Cut Tape 2,660 10
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    • 10 $0.551
    • 100 $0.551
    • 1000 $0.551
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    TME SI9945BDY-T1-GE3 12,686 1
    • 1 $1.04
    • 10 $0.941
    • 100 $0.709
    • 1000 $0.626
    • 10000 $0.563
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    Rutronik SI9945BDY-T1-GE3 Reel 2,500 2,500
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    Avnet Asia SI9945BDY-T1-GE3 2,500
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    Chip Stock SI9945BDY-T1-GE3 1,656
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    Chip-Germany GmbH SI9945BDY-T1-GE3 824
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    Chip1Stop SI9945BDY-T1-GE3 85,000
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    Component Electronics, Inc SI9945BDY-T1-GE3 800
    • 1 $7.69
    • 10 $7.69
    • 100 $5.77
    • 1000 $5
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    EBV Elektronik SI9945BDY-T1-GE3 102,500 7 Weeks 2,500
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    New Advantage Corporation SI9945BDY-T1-GE3 77,500 1
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    Vishay Intertechnologies SI9945BDY-T1-GE3.

    Mosfet, Dual N Channel, 60V, 5.3A, Soic-8, Full Reel; Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:60V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:5.3A; No. Of Pins:8Pins Rohs Compliant: No |Vishay SI9945BDY-T1-GE3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI9945BDY-T1-GE3. Reel 2,500
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    Find more SI9945 price and stock on Findchips.com

    SI9945 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Si9945AEY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI9945AEY Vishay Dual N-Channel 60-V (D-S), 175°C MOSFET Original PDF
    Si9945AEY Vishay Intertechnology Dual N-Channel Enhancement-Mode MOSFET Original PDF
    SI9945AEY General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 60V, Dual, Pkg Style SO-8 Scan PDF
    Si9945AEY SPICE Device Model Vishay Dual N-Channel Enhancement-Mode MOSFET Original PDF
    SI9945AEY-T1 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 3.7A 8SOIC Original PDF
    SI9945BDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 5.3A 8-SOIC Original PDF
    SI9945DY Fairchild Semiconductor Dual N-Channel Enhancement Mode MOSFET Original PDF
    Si9945DY Fairchild Semiconductor Dual N-Channel Enhancement Mode MOSFET Original PDF
    SI9945DY Temic Semiconductors Dual N-Channel Enhancement-Mode MOSFET Original PDF
    Si9945DY Toshiba Power MOSFETs Cross Reference Guide Original PDF

    SI9945 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    14093

    Abstract: 75431
    Text: Si9945BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si9945BDY AN609, 3203u 3659m 8029m 3567u 2443m 3998m 0795m 14093 75431

    si9945b

    Abstract: SI9945BDY SI9945BDY-T1-GE si9945bd
    Text: New Product Si9945BDY Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 VDS (V) 60 Qg (Typ.) 13 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si9945BDY Si9945BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si9945b SI9945BDY-T1-GE si9945bd

    Untitled

    Abstract: No abstract text available
    Text: Si9945DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si9945DY

    Si9945AEY-T1-E3

    Abstract: Si9945AEY SI9945 Si9945AEY-T1-GE3 SI9945A
    Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si9945AEY 2002/95/EC Si9945AEY-T1-E3 Si9945AEY-T1-GE3 18-Jul-08 SI9945 SI9945A

    SI9945AEY-T1

    Abstract: No abstract text available
    Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si9945AEY 2002/95/EC Si9945AEY-T1-E3 Si9945AEY-T1-GE3 11-Mar-11 SI9945AEY-T1

    Si9945AEY

    Abstract: Si9945AEY-T1 Si9945AEY-T1-E3
    Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • TrenchFET Power MOSFETs • Maximum Junction Temperature: 175 °C Rated


    Original     		PDF Si9945AEY Si9945AEY-T1 Si9945AEY-T1-E3 08-Apr-05

    si9950

    Abstract: Si9950DY Si9948DY SI9945 Si9945DY
    Text: Si9950DY Complementary MOSFET Half-Bridge Product Summary VDS V N- or P-Channel 50 rDS(on) (W) ID (A) 0.3 @ VGS = 10 V "2.0 1.0 @ VGS = 5 V "1.2 Alternate Solution: one Si9948DY and one Si9945DY V+ V+ SO-16 GND 1 16 GND OUTPUT 2 15 OUTPUT OUTPUT 3 14 OUTPUT


    Original     		PDF Si9950DY Si9948DY Si9945DY SO-16 P-38889--Rev. 17-Oct-94 si9950 SI9945

    SI9959DY

    Abstract: SI9945 Si9945DY SI9959
    Text: Si9959DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.30 @ VGS = 10 V "2.0 0.50 @ VGS = 5 V "0.6 For higher performance see Si9945DY D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET


    Original     		PDF Si9959DY Si9945DY S-47958--Rev. 15-Apr-96 SI9945 SI9959

    Si9945AEY

    Abstract: No abstract text available
    Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V "3.7 0.100 @ VGS = 4.5 V "3.4 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET


    Original     		PDF Si9945AEY 08-Apr-05

    Si9959DY

    Abstract: SI9945 Si9945DY A86V
    Text: Si9959DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.30 @ VGS = 10 V "2.0 0.50 @ VGS = 5 V "0.6 For higher performance see Si9945DY D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET


    Original     		PDF Si9959DY Si9945DY S-47958--Rev. 15-Apr-96 SI9945 A86V

    Si9945aey

    Abstract: SI9945
    Text: SPICE Device Model Si9945AEY Vishay Siliconix Dual N-Channel Enhancement-Mode MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si9945AEY 18-Apr-01 SI9945

    SI9945

    Abstract: Si9945AEY S-5725
    Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V "3.7 0.100 @ VGS = 4.5 V "3.4 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET


    Original     		PDF Si9945AEY S-57253--Rev. 24-Feb-98 SI9945 S-5725

    Si9945AEY-T1

    Abstract: SI9945 SQ9945AEY-T1 AECQ101 SI9945AEY Si9945AEY SPICE Device Model
    Text: Si9945AEY/SQ9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • TrenchFET Power MOSFETs • Maximum Junction Temperature: 175 °C Rated


    Original     		PDF Si9945AEY/SQ9945AEY Si9945AEY-T1 SQ9945AEY-T1 AECQ101 08-Apr-05 SI9945 SQ9945AEY-T1 SI9945AEY Si9945AEY SPICE Device Model

    Si9945BDY-T1-GE3

    Abstract: Si9945BDY SI9945BDY-T1-GE
    Text: New Product Si9945BDY Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 VDS (V) 60 Qg (Typ.) 13 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si9945BDY Si9945BDY-T1-GE3 11-Mar-11 SI9945BDY-T1-GE

    Si9955DY Siliconix

    Abstract: Si9945DY Si9955DY
    Text: Si9955DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 50 rDS(on) (W) ID (A) 0.13 @ VGS = 10 V "3.0 0.20 @ VGS = 4.5 V "1.5 Recommend upgrade: Si9945DY D1 D1 D2 D2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View G1 G2 S1


    Original     		PDF Si9955DY Si9945DY P38889Rev. Si9955DY Siliconix

    Si9959DY

    Abstract: Si9945DY
    Text: Si9959DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.30 @ VGS = 10 V "2.0 0.50 @ VGS = 5 V "0.6 For higher performance see Si9945DY D1 D1 D2 D2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View


    Original     		PDF Si9959DY Si9945DY S-42911--Rev.

    Untitled

    Abstract: No abstract text available
    Text: New Product Si9945BDY Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 VDS (V) 60 Qg (Typ.) 13 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si9945BDY Si9945BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI9945

    Abstract: Si9945AEY
    Text: SPICE Device Model Si9945AEY Dual N-Channel Enhancement-Mode MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switchmode • Applicable Over a -55 to 125°C Temperature Range


    Original     		PDF Si9945AEY SI9945

    SI9950DY

    Abstract: si9950 6V25V SI9945 Si9948DY Si9945DY
    Text: Si9950DY Complementary MOSFET Half-Bridge Product Summary VDS V N- or P-Channel 50 rDS(on) (W) ID (A) 0.3 @ VGS = 10 V "2.0 1.0 @ VGS = 5 V "1.2 Alternate Solution: one Si9948DY and one Si9945DY V+ V+ SO-16 GND 1 16 GND OUTPUT 2 15 OUTPUT OUTPUT 3 14 OUTPUT


    Original     		PDF Si9950DY Si9948DY Si9945DY SO-16 P-38889--Rev. 17-Oct-94 si9950 6V25V SI9945

    SI9945BDY-T1-GE3

    Abstract: SI9945 SI9945BDY si9945b
    Text: New Product Si9945BDY Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 VDS (V) 60 Qg (Typ.) 13 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si9945BDY Si9945BDY-T1-GE3 18-Jul-08 SI9945 si9945b

    SI9945AEY-T1-E3

    Abstract: Si9945aey SI9945 SI9945AEY-T1
    Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • TrenchFET Power MOSFETs • Maximum Junction Temperature: 175 °C Rated


    Original     		PDF Si9945AEY Si9945AEY-T1 Si9945AEY-T1-E3 18-Jul-08 SI9945

    SI9945AEY-T1-E3

    Abstract: SI9945BDY-T1-GE3 Si9945aey Si9945BDY SI9945 Si9945AEY-T1 MOSFET 20V
    Text: Specification Comparison Vishay Siliconix Si9945BDY vs. Si9945AEY Description: Package: Pin Out: Dual N-Channel, 20-V D-S MOSFET SO-8 Identical Part Number Replacements: Si9945BDY-T1-GE3 replaces Si9945AEY-T1-E3 Si9945BDY-T1-GE3 replaces Si9945AEY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si9945BDY Si9945AEY Si9945BDY-T1-GE3 Si9945AEY-T1-E3 Si9945AEY-T1 25-May-09 SI9945 MOSFET 20V

    SI9945

    Abstract: Si9945DY
    Text: Si9945DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si9945DY SI9945

    SI9945

    Abstract: Siliconix Si9945AEY
    Text: Si9945AEY Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET New Product PRODUCT SUMMARY VDS (V) 60 RDS(ON) (W) ID (A) 0.080 @ VGS = 10 V "3.7 0.100 @ VGS = 4.5 V "3.4 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET


    Original     		PDF Si9945AEY S-57253--Rev. 24-Feb-98 SI9945 Siliconix