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    SI9926 Price and Stock

    Vishay Siliconix SI9926CDY-T1-GE3

    MOSFET 2N-CH 20V 8A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI9926CDY-T1-GE3 Cut Tape 23,326 1
    • 1 $1.58
    • 10 $1.003
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    • 1000 $0.48007
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    SI9926CDY-T1-GE3 Digi-Reel 23,326 1
    • 1 $1.58
    • 10 $1.003
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    • 1000 $0.48007
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    SI9926CDY-T1-GE3 Reel 22,500 2,500
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    • 10000 $0.43005
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    New Advantage Corporation SI9926CDY-T1-GE3 10,000 1
    • 1 -
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    • 10000 $0.4333
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    Vishay Siliconix SI9926CDY-T1-E3

    MOSFET 2N-CH 20V 8A 8SOIC
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    DigiKey SI9926CDY-T1-E3 Cut Tape 7,172 1
    • 1 $1.85
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    • 1000 $0.575
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    SI9926CDY-T1-E3 Digi-Reel 7,172 1
    • 1 $1.85
    • 10 $1.179
    • 100 $1.85
    • 1000 $0.575
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    SI9926CDY-T1-E3 Reel 5,000 2,500
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    • 10000 $0.475
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    RS SI9926CDY-T1-E3 Bulk 2,500
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    • 10000 $0.88
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    Quest Components SI9926CDY-T1-E3 37
    • 1 $0.72
    • 10 $0.6
    • 100 $0.48
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    New Advantage Corporation SI9926CDY-T1-E3 5,000 1
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    • 10000 $0.3592
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    Rochester Electronics LLC SI9926DY

    MOSFET 2N-CH 20V 6.5A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI9926DY Bulk 4,791 1,268
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    Vishay Siliconix SI9926BDY-T1-E3

    MOSFET 2N-CH 20V 6.2A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI9926BDY-T1-E3 Cut Tape 1
    • 1 $1.61
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    SI9926BDY-T1-E3 Digi-Reel 1
    • 1 $1.61
    • 10 $1.61
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    SI9926BDY-T1-E3 Reel 2,500
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    • 10000 $0.43732
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    RS SI9926BDY-T1-E3 Bulk 2,500
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    • 10000 $1
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    Vishay Siliconix SI9926BDY-T1-GE3

    MOSFET 2N-CH 20V 6.2A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI9926BDY-T1-GE3 Reel 2,500
    • 1 -
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    • 10000 $0.43732
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    Find more SI9926 price and stock on Findchips.com

    SI9926 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI9926ADY Vishay FET DUAL N-CHANNEL 2.5-V (G-S) MOSFET Original PDF
    Si9926ADY Vishay Intertechnology Dual N-Channel 2.5-V (G-S) MOSFET Original PDF
    SI9926ADY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET Original PDF
    SI9926BDY Kexin Dual N-Channel MOSFET Original PDF
    SI9926BDY Vishay Siliconix MOSFETs Original PDF
    SI9926BDY Vishay Siliconix MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:6.2A; On-Resistance, Rds(on):0.03ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC; Drain-Source Breakdown Voltage:20V Original PDF
    SI9926BDY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET Original PDF
    Si9926BDY Vishay Telefunken Dual N-channel 2.5-v (g-s) Mosfet Original PDF
    Si9926BDY SPICE Device Model Vishay Dual N-Channel 2.5-V (G-S) MOSFET Original PDF
    SI9926BDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 6.2A 8-SOIC Original PDF
    SI9926BDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 6.2A 8-SOIC Original PDF
    SI9926CDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 8A 8-SOIC Original PDF
    SI9926CDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 8A 8-SOIC Original PDF
    SI9926DY Fairchild Semiconductor Dual N-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    SI9926DY Kexin Dual N-Channel MOSFET Original PDF
    SI9926DY Kexin Dual N-Channel MOSFET Original PDF
    Si9926DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI9926DY Vishay Dual N-Channel 2.5-V (G-S) Rated MOSFET Original PDF
    Si9926DY Vishay Intertechnology Dual N-Channel 2.5-V (G-S) MOSFET Original PDF
    SI9926DY General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 20V, Dual, SO-8 Scan PDF

    SI9926 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si9926ADY

    Abstract: No abstract text available
    Text: Si9926ADY New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 6 0.040 @ VGS = 2.5 V 5 D1 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET


    Original     		PDF Si9926ADY S-04055--Rev. 25-Jun-01

    SI9926CD

    Abstract: Si9926CDY
    Text: SPICE Device Model Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si9926CDY 18-Jul-08 SI9926CD

    Si9926BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9926BDY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si9926BDY 01-Jun-04

    Untitled

    Abstract: No abstract text available
    Text: New Product Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.018 at VGS = 4.5 V 8 0.022 at VGS = 2.5 V 8 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si9926CDY 2002/95/EC Si9926CDY-T1-E3 Si9926CDY-T1-GE3 11-Mar-11

    Si9926ADY

    Abstract: No abstract text available
    Text: Si9926ADY New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 6 0.040 @ VGS = 2.5 V 5 D1 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET


    Original     		PDF Si9926ADY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si9926BDY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 8.2 0.030 at VGS = 2.5 V 6.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETS • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si9926BDY 2002/95/EC Si9926BDY-T1-E3 Si9926BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si9926BDY Vishay Siliconix New Product Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 8.2 0.030 at VGS = 2.5 V 6.7 • TrenchFET Power MOSFETS Pb-free Available RoHS* COMPLIANT SO-8 D1 S1 1


    Original     		PDF Si9926BDY Si9926BDY-T1 Si9926BDY-T1-E3 18-Jul-08

    SI9926BDY

    Abstract: Si9926ADY Si9926BDY-T1 Si9926BDY-T1-E3 22SV SI9926BDY-E3
    Text: Specification Comparison Vishay Siliconix Si9926BDY vs. Si9926ADY Description: N-Channel, 2.5 V G-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si9926BDY Replaces Si9926ADY Si9926BDY-E3 (Lead (Pb)-free version) Replaces Si9926ADY


    Original     		PDF Si9926BDY Si9926ADY Si9926BDY-E3 Si9926BDY-T1 Si9926ADY-T1 Si9926BDY-T1-E3 22SV

    Si9926DY

    Abstract: No abstract text available
    Text: Si9926DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.03 @ VGS = 4.5 V "6 0.04 @ VGS = 2.5 V "5.2 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si9926DY 10-ms S-47897--Rev. 24-Jun-96

    mosfet 5130

    Abstract: Si9925DY Si9926DY
    Text: Si9925DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.5 V "3.6 Recommended upgrade: Si9926DY D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1


    Original     		PDF Si9925DY Si9926DY S-47958--Rev. 15-Apr-96 mosfet 5130

    SI9926CD

    Abstract: No abstract text available
    Text: New Product Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.018 at VGS = 4.5 V 8 0.022 at VGS = 2.5 V 8 VDS (V) 20 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ.) 10 nC RoHS APPLICATIONS


    Original     		PDF Si9926CDY Si9926CDY-T1-E3 18-Jul-08 SI9926CD

    Untitled

    Abstract: No abstract text available
    Text: Si9926ADY New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 6 0.040 @ VGS = 2.5 V 5 D1 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET


    Original     		PDF Si9926ADY 08-Apr-05

    Si9926BDY

    Abstract: Si9926BDY SPICE Device Model
    Text: SPICE Device Model Si9926BDY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si9926BDY 18-Jul-08 Si9926BDY SPICE Device Model

    Si9926CDY

    Abstract: SI9926CDY-T1-GE3
    Text: New Product Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.018 at VGS = 4.5 V 8 0.022 at VGS = 2.5 V 8 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si9926CDY 2002/95/EC Si9926CDY-T1-E3 Si9926CDY-T1-GE3 18-Jul-08

    9926 mosfet

    Abstract: OZ 9926 9926 BATTERY Si9926DY 9926 SO-8 F 9926 MOSFET
    Text: Si9926DY Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage


    Original     		PDF Si9926DY 9926 mosfet OZ 9926 9926 BATTERY 9926 SO-8 F 9926 MOSFET

    Si9926CDY

    Abstract: SI9926CDY-T1-GE3
    Text: New Product Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.018 at VGS = 4.5 V 8 0.022 at VGS = 2.5 V 8 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si9926CDY 2002/95/EC Si9926CDY-T1-E3 Si9926CDY-T1-GE3 11-Mar-11

    Si9926CDY

    Abstract: SI9926CDY-T1-E3 8089-2 SI9926CD
    Text: New Product Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.018 at VGS = 4.5 V 8 0.022 at VGS = 2.5 V 8 VDS (V) 20 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ.) 10 nC RoHS APPLICATIONS


    Original     		PDF Si9926CDY Si9926CDY-T1-E3 08-Apr-05 8089-2 SI9926CD

    Si9926BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9926BDY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si9926BDY 04-Aug-03

    Untitled

    Abstract: No abstract text available
    Text: Si9926BDY New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.020 @ VGS = 4.5 V 8.2 0.030 @ VGS = 2.5 V 6.7 D TrenchFETr Power MOSFETS D1 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1


    Original     		PDF Si9926BDY Si9926BDY-T1 08-Apr-05

    Si9926BDY-T1-E3

    Abstract: Si9926BDY Si9926BDY-T1
    Text: Si9926BDY Vishay Siliconix New Product Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 8.2 0.030 at VGS = 2.5 V 6.7 • TrenchFET Power MOSFETS Pb-free Available RoHS* COMPLIANT SO-8 D1 S1 1


    Original     		PDF Si9926BDY Si9926BDY-T1 Si9926BDY-T1-E3 08-Apr-05

    Si9926DY

    Abstract: No abstract text available
    Text: Si9926DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.03 @ VGS = 4.5 V "6 0.04 @ VGS = 2.5 V "5.2 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si9926DY 10-ms S-47897--Rev. 24-Jun-96

    SO-8 gs 069

    Abstract: No abstract text available
    Text: New Product Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.018 at VGS = 4.5 V 8 0.022 at VGS = 2.5 V 8 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si9926CDY 2002/95/EC Si9926CDY-T1-E3 Si9926CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SO-8 gs 069

    Untitled

    Abstract: No abstract text available
    Text: New Product Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.018 at VGS = 4.5 V 8 0.022 at VGS = 2.5 V 8 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si9926CDY 2002/95/EC Si9926CDY-T1-E3 Si9926CDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si9926DY VISHAY Siliconix Dual N-Channel 2.5-V G-S Rated MOSFET PRODUCT SUMMARY VDS (V) r DS(ON) (& ) Id (A) 0.03 @ VGS = 4.5 V ±6 0.04 @ VGS = 2.5 V ±5 .2 20 □i D, D2 D2 Q P p Q SO-8 6 Si s2 6 N-Channel MOSFET N-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED)


    OCR Scan     		PDF Si9926DY S-60715â 01-Feb-99