SI9435BDY-E3
Abstract: Si9435BDY Si9435DY Si9435BDY-T1 Si9435BDY-T1-E3 Si9435DY-T1
Text: Specification Comparison Vishay Siliconix Si9435BDY vs. Si9435DY Description: P-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si9435BDY Replaces Si9435DY Si9435BDY-E3 (Lead (Pb)-free version) Replaces Si9435DY Si9435BDY-T1 Replaces Si9435DY-T1
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Si9435BDY
Si9435DY
Si9435BDY-E3
Si9435BDY-T1
Si9435DY-T1
Si9435BDY-T1-E3
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Si9435BDY
Abstract: si9435bdy vishay
Text: SPICE Device Model Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si9435BDY
18-Jul-08
si9435bdy vishay
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SI9435BDY equivalent
Abstract: Si9435BDY DIODE B-10
Text: SPICE Device Model Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si9435BDY
S-60544Rev.
10-Apr-06
SI9435BDY equivalent
DIODE B-10
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mar 808
Abstract: No abstract text available
Text: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 10 V - 5.7 0.055 at VGS = - 6 V - 5.0 0.070 at VGS = - 4.5 V - 4.4 - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si9435BDY
2002/95/EC
Si9435BDY-T1-E3
Si9435BDY-T1-GE3
11-Mar-11
mar 808
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Si9435BDY
Abstract: si9435bdy vishay 7233-5
Text: SPICE Device Model Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si9435BDY
0-to-10V
15-Jun-03
si9435bdy vishay
7233-5
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si9435bdy vishay
Abstract: No abstract text available
Text: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 10 V - 5.7 0.055 at VGS = - 6 V - 5.0 0.070 at VGS = - 4.5 V - 4.4 - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si9435BDY
2002/95/EC
Si9435BDY-T1-E3
Si9435BDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si9435bdy vishay
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Si9435BDY-T1-GE3
Abstract: Si9435BDY Si9435BDY-T1-E3 si9435bdy vishay
Text: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 10 V - 5.7 0.055 at VGS = - 6 V - 5.0 0.070 at VGS = - 4.5 V - 4.4 - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si9435BDY
2002/95/EC
Si9435BDY-T1-E3
Si9435BDY-T1-GE3
18-Jul-08
si9435bdy vishay
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si9435bdy vishay
Abstract: 72245
Text: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.042 @ VGS = −10 V −5.7 0.055 @ VGS = −6 V −5.0 0.070 @ VGS = −4.5 V −4.4 −30 D TrenchFETr Power MOSFET S SO-8 S 1 8 D S 2 7 D S 3 6 D
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Si9435BDY
Si9435BDY-T1
Si9435BDY--E3
Si9435BDY-T1--E3
S-50153--Rev.
31-Jan-05
si9435bdy vishay
72245
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Si9435BDY
Abstract: Si9435BDY-T1-E3 Si9435BDY-T1-GE3
Text: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 10 V - 5.7 0.055 at VGS = - 6 V - 5.0 0.070 at VGS = - 4.5 V - 4.4 - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si9435BDY
2002/95/EC
Si9435BDY-T1-E3
Si9435BDY-T1-GE3
11-Mar-11
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Si9435BDY
Abstract: Si9435BDY-T1
Text: Si9435BDY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.042 @ VGS = −10 V −5.7 0.055 @ VGS = −6 V −5.0 0.070 @ VGS = −4.5 V −4.4 −30 D TrenchFETr Power MOSFET S SO-8 S 1 8 D S 2
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Si9435BDY
Si9435BDY-T1
S-32274--Rev.
03-Nov-03
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SI9435BDY-E3
Abstract: Si9435BDY Si9435BDY-T1
Text: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.042 @ VGS = −10 V −5.7 0.055 @ VGS = −6 V −5.0 0.070 @ VGS = −4.5 V −4.4 −30 D TrenchFETr Power MOSFET S SO-8 S 1 8 D S 2 7 D S 3 6 D
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Si9435BDY
Si9435BDY-T1
Si9435BDY--E3
Si9435BDY-T1--E3
08-Apr-05
SI9435BDY-E3
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si9435bdy vishay
Abstract: No abstract text available
Text: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.042 @ VGS = −10 V −5.7 0.055 @ VGS = −6 V −5.0 0.070 @ VGS = −4.5 V −4.4 −30 D TrenchFETr Power MOSFET S SO-8 S 1 8 D S 2 7 D S 3 6 D
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Si9435BDY
Si9435BDY-T1
Si9435BDY--E3
Si9435BDY-T1--E3
18-Jul-08
si9435bdy vishay
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Untitled
Abstract: No abstract text available
Text: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 10 V - 5.7 0.055 at VGS = - 6 V - 5.0 0.070 at VGS = - 4.5 V - 4.4 - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si9435BDY
2002/95/EC
Si9435BDY-T1-E3
Si9435BDY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si9435BDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.042 @ VGS = - 10 V - 5.7 0.055 @ VGS = - 6 V - 5.0 0.070 @ VGS = - 4.5 V - 4.4 - 30 D TrenchFETr Power MOSFET S SO-8 S 1 8 D S 2 7 D S
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Si9435BDY
Si9435BDY-T1
S-31252--Rev.
16-Jun-03
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1N4007 MINI MELF
Abstract: No abstract text available
Text: LCD Television Table of Contents BACKLIGHT INVERTER, Lighting Ignitor. 3 BACKLIGHT INVERTER, MOSFET Driver. 4
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250ns
DO-220AA
V-540V;
V-440V;
DO-204AL
DO-41)
DO-204AC
1N4007 MINI MELF
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BS250KL
Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SC-75
SC-75A
SC-89
BS250KL
tsop6 marking 345
SUD50P08
SI3437
SUD19P06-60L
MOSFET SUB75P03
tsop6 marking 443
Si5947DU
Si1471DH
SI1073X
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5a6 zener diode
Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical
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Si4418DY
130mOhm@
Si4420BDY
Si6928DQ
35mOhm@
Si6954ADQ
53mOhm@
SiP2800
SUM47N10-24L
24mOhm@
5a6 zener diode
dual mosfet dip
diode zener 6.2v 1w
10v ZENER DIODE
5A6 smd sot23
DG9415
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irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
F155-6A
F155-10A
F165-15A
F175-25A
irfb4115
BTY79 equivalent
diode skn 21-04
marking CODE W04 sot-23
bbc 598 479 DIODE
mw 137 600g
TFK 401 S 673
Vishay Telefunken tfk transistor
INFINEON transistor marking W31
JYs marking transistor
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