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    SI9407AEY SPICE DEVICE MODEL Search Results

    SI9407AEY SPICE DEVICE MODEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    SI9407AEY SPICE DEVICE MODEL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si9407AEY SPICE Device Model Vishay P-Channel 50-V (D-S) MOSFET Original PDF

    SI9407AEY SPICE DEVICE MODEL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si9407AEY

    Abstract: Si9407AEY SPICE Device Model
    Text: SPICE Device Model Si9407AEY Vishay Siliconix P-Channel 50-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si9407AEY capacita30V, 05-Nov-99 Si9407AEY SPICE Device Model PDF

    Si9407AEY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9407AEY Vishay Siliconix P-Channel 50-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si9407AEY S-52519Rev. 12-Dec-05 PDF

    Si9407AEY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9407AEY Vishay Siliconix P-Channel 50-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si9407AEY 18-Jul-08 PDF