3161
Abstract: Si7981DP
Text: Si7981DP New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.020 @ VGS = - 4.5 V - 10.9 0.024 @ VGS = - 2.5 V - 10.0 0.033 @ VGS = - 1.8 V - 3.0 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package
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PDF
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Si7981DP
07-mm
Si7981DP-T1
S-31611--Rev.
11-Aug-03
3161
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72508
Abstract: Si7981DP
Text: SPICE Device Model Si7981DP Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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PDF
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Si7981DP
03-Sep-03
72508
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3161
Abstract: Si7981DP
Text: Si7981DP New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.020 @ VGS = - 4.5 V - 10.9 0.024 @ VGS = - 2.5 V - 10.0 0.033 @ VGS = - 1.8 V - 3.0 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package
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Original
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PDF
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Si7981DP
07-mm
Si7981DP-T1
18-Jul-08
3161
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Untitled
Abstract: No abstract text available
Text: Si7981DP New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.020 @ VGS = - 4.5 V - 10.9 0.024 @ VGS = - 2.5 V - 10.0 0.033 @ VGS = - 1.8 V - 3.0 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package
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Original
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PDF
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Si7981DP
07-mm
Si7981DP-T1
08-Apr-05
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