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    SI7971DP Search Results

    SI7971DP Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7971DP Vishay Siliconix MOSFETs Original PDF
    Si7971DP SPICE Device Model Vishay Dual P-Channel 12-V (D-S) MOSFET Original PDF

    SI7971DP Datasheets Context Search

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    Si7971DP

    Abstract: No abstract text available
    Text: Si7971DP Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) – 12 rDS(on) (Ω) ID (A) 0.018 at VGS = – 4.5 V – 11.7 0.022 at VGS = – 2.5 V – 10.6 0.029 at VGS = – 1.8 V – 3.5 • TrenchFET Power MOSFET


    Original
    PDF Si7971DP 07-mm Si7971DP-T1 Si7971DP-T1--E3 25lectual 18-Jul-08

    Si7971DP

    Abstract: 117-a 117a
    Text: SPICE Device Model Si7971DP Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si7971DP 20-Aug-03 117-a 117a

    3161

    Abstract: Si7971DP
    Text: Si7971DP New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) - 12 ID (A) 0.018 @ VGS = - 4.5 V - 11.7 0.022 @ VGS = - 2.5 V - 10.6 0.029 @ VGS = - 1.8 V - 3.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package


    Original
    PDF Si7971DP 07-mm Si7971DP-T1 S-31610--Rev. 11-Aug-03 3161

    Si7971DP

    Abstract: No abstract text available
    Text: Si7971DP Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) – 12 rDS(on) (Ω) ID (A) 0.018 at VGS = – 4.5 V – 11.7 0.022 at VGS = – 2.5 V – 10.6 0.029 at VGS = – 1.8 V – 3.5 • TrenchFET Power MOSFET


    Original
    PDF Si7971DP 07-mm Si7971DP-T1 Si7971DP-T1--E3 25CHARACTERISTICS S-52555-Rev. 19-Dec-05

    Untitled

    Abstract: No abstract text available
    Text: Si7971DP New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) - 12 ID (A) 0.018 @ VGS = - 4.5 V - 11.7 0.022 @ VGS = - 2.5 V - 10.6 0.029 @ VGS = - 1.8 V - 3.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package


    Original
    PDF Si7971DP 07-mm Si7971DP-T1 08-Apr-05

    A1818

    Abstract: No abstract text available
    Text: Si7971DP Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) – 12 rDS(on) (Ω) ID (A) 0.018 at VGS = – 4.5 V – 11.7 0.022 at VGS = – 2.5 V – 10.6 0.029 at VGS = – 1.8 V – 3.5 • TrenchFET Power MOSFET


    Original
    PDF Si7971DP 07-mm Si7971DP-T1 Si7971DP-T1--E3 08-Apr-05 A1818