Si7894DP
Abstract: No abstract text available
Text: \\\ SPICE Device Model Si7894DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7894DP
30-May-04
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Si7894DP
Abstract: Si7894DP-T1
Text: Si7894DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested PRODUCT SUMMARY
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Si7894DP
07-mm
Si7894DP-T1
S-31727--Rev.
18-Aug-03
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Si7894DP
Abstract: No abstract text available
Text: \\\ SPICE Device Model Si7894DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7894DP
0-to-10V
05-May-02
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Si7894DP
Abstract: Si7894DP-T1
Text: Si7894DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested PRODUCT SUMMARY
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Si7894DP
07-mm
Si7894DP-T1
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si7894DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested PRODUCT SUMMARY
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Si7894DP
07-mm
Si7894DP-T1
08-Apr-05
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Si7894ADP
Abstract: Si7894ADP-T1-E3 Si7894DP Si7894DP-T1 Si7894DP-T1-E3
Text: Specification Comparison Vishay Siliconix Si7894ADP vs. Si7894DP Description: Package: Pin Out: N-Channel MOSFET PowerPAK SO-8 Identical Part Number Replacements Si7894ADP-T1 Replaces Si7894DP-T1 Lead Pb -free: Si7894ADP-T1-E3 Replaces Si7894DP-T1-E3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
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Si7894ADP
Si7894DP
Si7894ADP-T1
Si7894DP-T1
Si7894ADP-T1-E3
Si7894DP-T1-E3
08-Nov-06
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Si7894DP
Abstract: 20352
Text: Si7894DP New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile PRODUCT SUMMARY VDS (V)
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Si7894DP
07-mm
S-20352--Rev.
18-Apr-02
20352
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71917
Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller
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AN607
Si9137
SSOP-28
Si9910
Si9912
Si9913
10-Oct-02
71917
level logic mosfet transistor so-8
offline switchmode
si9110
siliconix an607
AN607
AN707
SI4406DY
PowerPAK SO-8
si2301ds
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VJ0805A271JXB
Abstract: UCC27324 UCC27322 VJ1206Y473K 2a mosfet driver TL431CPKR Payton TPS2829 UCC35705 PANASONIC CAPACITOR
Text: User’s Guide 48-V to 3.3-V RCD Forward with UCC35705 Voltage-Mode Control and Self-Driven Synchronous Rectification User’s Guide SLUU141 – March 2003 EVM IMPORTANT NOTICE Texas Instruments TI provides the enclosed product(s) under the following conditions:
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UCC35705
SLUU141
VJ0805A271JXB
UCC27324
UCC27322
VJ1206Y473K
2a mosfet driver
TL431CPKR
Payton
TPS2829
PANASONIC CAPACITOR
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sud*50n025-06p
Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m
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VSA-SG0019-0310
sud*50n025-06p
SUD70N03-04P
SI9120
sum45n25
SI9119
Si7810DN
sud*50n025-09p
SI2301ADS
SI4732CY
si9110
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