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    SI7884 Price and Stock

    Vishay Siliconix SI7884BDP-T1-E3

    MOSFET N-CH 40V 58A PPAK SO-8
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    DigiKey SI7884BDP-T1-E3 Digi-Reel 5,320 1
    • 1 $3.89
    • 10 $2.555
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    • 1000 $1.36284
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    SI7884BDP-T1-E3 Cut Tape 5,320 1
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    SI7884BDP-T1-E3 Reel 3,000 3,000
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    ES Components SI7884BDP-T1-E3
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    Vishay Siliconix SI7884BDP-T1-GE3

    MOSFET N-CH 40V 58A PPAK SO-8
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    DigiKey SI7884BDP-T1-GE3 Digi-Reel 5,076 1
    • 1 $2.27
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    • 1000 $0.96708
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    SI7884BDP-T1-GE3 Cut Tape 5,076 1
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    SI7884BDP-T1-GE3 Reel 3,000 3,000
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    Vishay Intertechnologies SI7884BDP-T1-E3

    Trans MOSFET N-CH 40V 18.5A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7884BDP-T1-E3)
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    Avnet Americas SI7884BDP-T1-E3 Reel 20 Weeks 3,000
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    Verical SI7884BDP-T1-E3 3,000 3,000
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    SI7884BDP-T1-E3 3,000 5
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    • 1000 $1.3599
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    Arrow Electronics SI7884BDP-T1-E3 3,000 20 Weeks 3,000
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    SI7884BDP-T1-E3 Cut Strips 3,000 20 Weeks 1
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    Newark SI7884BDP-T1-E3 Cut Tape 3,000
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    SI7884BDP-T1-E3 Reel 3,000
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    Bristol Electronics SI7884BDP-T1-E3 3,637
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    Quest Components SI7884BDP-T1-E3 65
    • 1 $3.81
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    • 100 $2.0955
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    TTI SI7884BDP-T1-E3 Reel 3,000
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    Chip1Stop SI7884BDP-T1-E3 3,000
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    SI7884BDP-T1-E3 3,000
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    Vishay Intertechnologies SI7884BDP-T1-GE3

    Trans MOSFET N-CH 40V 18.5A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7884BDP-T1-GE3)
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    Avnet Americas SI7884BDP-T1-GE3 Reel 20 Weeks 3,000
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    Mouser Electronics SI7884BDP-T1-GE3 8,909
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    Verical SI7884BDP-T1-GE3 3,000 3,000
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    SI7884BDP-T1-GE3 3,000 3,000
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    SI7884BDP-T1-GE3 1,259 8
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    • 100 $1.2331
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    Arrow Electronics SI7884BDP-T1-GE3 3,000 20 Weeks 3,000
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    SI7884BDP-T1-GE3 Cut Strips 1,259 20 Weeks 1
    • 1 $1.8853
    • 10 $1.5645
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    Newark SI7884BDP-T1-GE3 Cut Tape 3,000
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    SI7884BDP-T1-GE3 Reel 3,000
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    Bristol Electronics SI7884BDP-T1-GE3 2,397
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    TTI SI7884BDP-T1-GE3 Reel 3,000 3,000
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    Chip1Stop SI7884BDP-T1-GE3 3,000
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    SI7884BDP-T1-GE3 1,259
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    • 10 $1.5645
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    EBV Elektronik SI7884BDP-T1-GE3 21 Weeks 3,000
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    Vishay Intertechnologies SI7884BDP-T1-BE3

    MOSFETs POWRPK N CHAN 40V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SI7884BDP-T1-BE3
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    TTI SI7884BDP-T1-BE3 Reel 3,000
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    Find more SI7884 price and stock on Findchips.com

    SI7884 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7884BDP-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 58A PPAK 8SOIC Original PDF
    SI7884BDP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 58A PPAK 8SOIC Original PDF
    SI7884DP Vishay TRANS FET 40V 20A SO-8 Original PDF
    Si7884DP Vishay Intertechnology N-Channel 40-V (D-S) MOSFET Original PDF
    SI7884DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET Original PDF
    Si7884DP SPICE Device Model Vishay N-Channel 40-V (D-S) MOSFET Original PDF

    SI7884 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si7884BDP-T1-E3

    Abstract: Si7884BDP
    Text: Si7884BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.0075 at VGS = 10 V 58 0.009 at VGS = 4.5 V 53 VDS (V) 40 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) RoHS 21 nC APPLICATIONS COMPLIANT


    Original     		PDF Si7884BDP Si7884BDP-T1-E3 08-Apr-05

    Si7884DP

    Abstract: Si7884DP-T1-E3
    Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 20 0.0095 at VGS = 4.5 V 17 PowerPAK SO-8 • Halogen-free available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7884DP Si7884DP-T1-E3 Si7884DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.0095 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching


    Original     		PDF Si7884DP 07-mm Si7884DP-T1 S-40951--Rev. 10-May-04

    Untitled

    Abstract: No abstract text available
    Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.0095 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching


    Original     		PDF Si7884DP 07-mm Si7884DP-T1 08-Apr-05

    Si7884BDP-T1-E3

    Abstract: Si7884BDP Si7884BDP-T1-GE3
    Text: New Product Si7884BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.0075 at VGS = 10 V 58 0.009 at VGS = 4.5 V 53 VDS (V) 40 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si7884BDP Si7884BDP-T1-E3 Si7884BDP-T1-GE3 11-Mar-11

    Si7884DP-T1-E3

    Abstract: Si7884DP Si7884DP-T1
    Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 20 0.0095 at VGS = 4.5 V 17 PowerPAK SO-8 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with


    Original     		PDF Si7884DP Si7884DP-T1 Si7884DP-T1-E3 S-52555-Rev. 19-Dec-05

    Untitled

    Abstract: No abstract text available
    Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.0095 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching


    Original     		PDF Si7884DP 07-mm Si7884DP-T1 S-31727--Rev. 18-Aug-03

    Untitled

    Abstract: No abstract text available
    Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.0095 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching


    Original     		PDF Si7884DP 07-mm Si7884DP-T1 S-31727--Rev. 18-Aug-03

    1.4044

    Abstract: 9303 AN609
    Text: Si7884ADP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si7884ADP AN609 03-Jan-08 1.4044 9303

    Si7884DP

    Abstract: No abstract text available
    Text: Si7884DP New Product Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.0095 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile


    Original     		PDF Si7884DP 07-mm S-21341--Rev. 05-ug-02

    Si7884BDP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7884BDP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si7884BDP 18-Jul-08

    Si7884DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7884DP S-60244Rev. 20-Feb-06

    Untitled

    Abstract: No abstract text available
    Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 20 0.0095 at VGS = 4.5 V 17 PowerPAK SO-8 • Halogen-free available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7884DP Si7884DP-T1-E3 Si7884DP-T1-GE3 11-Mar-11

    Si7884DP

    Abstract: us1150
    Text: \\\ SPICE Device Model Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7884DP 0-to-10V 06-Jun-02 us1150

    Si7884DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7884DP 18-Jul-08

    SI7884BDP-T1-E3

    Abstract: Si7884BDP Si7884BDP-T1-GE3
    Text: New Product Si7884BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.0075 at VGS = 10 V 58 0.009 at VGS = 4.5 V 53 VDS (V) 40 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si7884BDP Si7884BDP-T1-E3 Si7884BDP-T1-GE3 18-Jul-08

    Si7884BDP

    Abstract: A4521
    Text: SPICE Device Model Si7884BDP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si7884BDP S-82024-Rev. 01-Sep-08 A4521

    Untitled

    Abstract: No abstract text available
    Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 20 0.0095 at VGS = 4.5 V 17 PowerPAK SO-8 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with


    Original     		PDF Si7884DP 07-mm Si7884DP-T1 Si7884DP-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.0095 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching


    Original     		PDF Si7884DP 07-mm Si7884DP-T1 S-32077--Rev. 13-Oct-03

    20463

    Abstract: Si7884DP
    Text: Si7884DP New Product Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.0095 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile


    Original     		PDF Si7884DP 07-mm S-20463--Rev. 15-Apr-02 20463

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7884BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.0075 at VGS = 10 V 58 0.009 at VGS = 4.5 V 53 VDS (V) 40 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si7884BDP Si7884BDP-T1-E3 Si7884BDP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7884BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.0075 at VGS = 10 V 58 0.009 at VGS = 4.5 V 53 VDS (V) 40 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si7884BDP Si7884BDP-T1-E3 Si7884BDP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 20 0.0095 at VGS = 4.5 V 17 PowerPAK SO-8 • Halogen-free available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7884DP Si7884DP-T1-E3 Si7884DP-T1-GE3 08-Apr-05

    AN609

    Abstract: Si7884DP 13512
    Text: Si7884DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si7884DP AN609 19-Jan-06 13512