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    SI77 Price and Stock

    Vishay Siliconix SI7716ADN-T1-GE3

    MOSFET N-CH 30V 16A PPAK1212-8
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    DigiKey SI7716ADN-T1-GE3 Cut Tape 17,671 1
    • 1 $1.41
    • 10 $0.954
    • 100 $1.41
    • 1000 $0.49898
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    SI7716ADN-T1-GE3 Digi-Reel 17,671 1
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    SI7716ADN-T1-GE3 Reel 12,000 3,000
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    ES Components SI7716ADN-T1-GE3
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    Vishay Siliconix SI7738DP-T1-E3

    MOSFET N-CH 150V 30A PPAK SO-8
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    DigiKey SI7738DP-T1-E3 Digi-Reel 5,999 1
    • 1 $3.47
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    • 1000 $1.425
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    SI7738DP-T1-E3 Cut Tape 5,999 1
    • 1 $3.47
    • 10 $2.395
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    • 1000 $1.425
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    SI7738DP-T1-E3 Reel 3,000 3,000
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    Vishay Siliconix SI7772DP-T1-GE3

    MOSFET N-CH 30V 35.6A PPAK SO-8
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    DigiKey SI7772DP-T1-GE3 Cut Tape 5,880 1
    • 1 $0.93
    • 10 $0.624
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    • 1000 $0.31447
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    SI7772DP-T1-GE3 Digi-Reel 5,880 1
    • 1 $0.93
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    • 1000 $0.31447
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    SI7772DP-T1-GE3 Reel 3,000 3,000
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    New Advantage Corporation SI7772DP-T1-GE3 15,000 1
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    Vishay Siliconix SI7738DP-T1-GE3

    MOSFET N-CH 150V 30A PPAK SO-8
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    DigiKey SI7738DP-T1-GE3 Cut Tape 4,034 1
    • 1 $3.37
    • 10 $2.32
    • 100 $3.37
    • 1000 $1.3695
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    SI7738DP-T1-GE3 Digi-Reel 4,034 1
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    SI7738DP-T1-GE3 Reel 3,000 3,000
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    New Advantage Corporation SI7738DP-T1-GE3 3,000 1
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    Vishay Siliconix SI7742DP-T1-GE3

    MOSFET N-CH 30V 60A PPAK SO-8
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    DigiKey SI7742DP-T1-GE3 Digi-Reel 1
    • 1 $2.15
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    SI7742DP-T1-GE3 Reel 3,000
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    SI7742DP-T1-GE3 Cut Tape 1
    • 1 $2.15
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    SI77 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si7703EDN Vishay Intertechnology Single P-Channel 20-V (D-S) MOSFET With Schottky Diode Original PDF
    SI7703EDN Vishay Siliconix Single P-Channel 20-V (D-S) MOSFET With Schottky Diode Original PDF
    Si7703EDN SPICE Device Model Vishay P-Channel 20-V (D-S) MOSFET With Schottky Diode Original PDF
    SI7703EDN-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.3A 1212-8 Original PDF
    SI7703EDN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.3A 1212-8 PPAK Original PDF
    Si7705DN Vishay Intertechnology Single P-Channel 20-V (D-S) MOSFET With Schottky Diode Original PDF
    SI7705DN Vishay Siliconix MOSFETs Original PDF
    SI7705DN Vishay Siliconix Single P-Channel 20-V (D-S) MOSFET With Schottky Diode Original PDF
    SI7716ADN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 16A 1212-8 Original PDF
    SI7718DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 35A 1212-8 Original PDF
    SI7720DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12A 1212-8 Original PDF
    SI7726DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 35A 1212-8 Original PDF
    SI7738DP-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 30A PPAK 8SOIC Original PDF
    SI7738DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 30A PPAK 8SOIC Original PDF
    SI7742DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 60A PPAK 8SOIC Original PDF
    SI7748DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 50A PPAK 8SOIC Original PDF
    SI7758DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 60A PPAK 8SOIC Original PDF
    SI7772DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 35.6A 8-SOIC Original PDF
    SI7774DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 60A 8-SOIC Original PDF
    SI7784DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 35A PPAK 8SOIC Original PDF

    SI77 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si7748DP-T1-GE3

    Abstract: Si7748DP si7748
    Text: New Product Si7748DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 50 0.0066 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ.) 27.8 nC • Halogen-free • SkyFET Monolithic TrenchFET


    Original     		PDF Si7748DP Si7748DP-T1-GE3 11-Mar-11 si7748

    DIODE 0536

    Abstract: Si7738 Si7738DP Si7738DP-T1-E3
    Text: New Product Si7738DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 150 0.038 at VGS = 10 V 30 35 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested


    Original     		PDF Si7738DP Si7738DP-T1-E3 Si7738DP-T1-GE3 11-Mar-11 DIODE 0536 Si7738

    Si7784DP

    Abstract: Si7784DP-T1-GE3 si7784
    Text: New Product Si7784DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC S • Synchronous Rectification • DC/DC - High-Side Switch 5.15 mm


    Original     		PDF Si7784DP Si7784DP-T1-GE3 11-Mar-11 si7784

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7748DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 50 0.0066 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ.) 27.8 nC • Halogen-free • SkyFET Monolithic TrenchFET


    Original     		PDF Si7748DP Si7748DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si7790DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7790DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si7790DP 18-Jul-08

    Si7720

    Abstract: Si7720DN
    Text: SPICE Device Model Si7720DN Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si7720DN 18-Jul-08 Si7720

    SI7788DP-T1-GE3 PowerPAK SO-8 VISHAY

    Abstract: No abstract text available
    Text: New Product Si7788DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0031 at VGS = 10 V 50 0.0041 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)


    Original     		PDF Si7788DP Si7788DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI7788DP-T1-GE3 PowerPAK SO-8 VISHAY

    Untitled

    Abstract: No abstract text available
    Text: Si7703EDN Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 6.3 0.068 at VGS = - 2.5 V - 5.3 0.090 at VGS = - 1.8 V - 4.6 SCHOTTKY PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7703EDN Si7703EDN-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si7720DN

    Abstract: Si7720DN-T1-GE3 si7720
    Text: Si7720DN Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) (Ω) 30 0.0125 at VGS = 10 V 12 0.015 at VGS = 4.5 V 12 Qg (Typ.) 13.7 nC PowerPAK 1212-8 S 3.30 mm • Notebook PC - System Power • Buck Converter


    Original     		PDF Si7720DN 11-Mar-11 Si7720DN-T1-GE3 si7720

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7794DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0034 at VGS = 10 V 60 0.0042 at VGS = 4.5 V 60 Qg (Typ.) 23 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7794DP 2002/95/EC Si7794DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si7742DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0035 at VGS = 10 V 60 0.0045 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 34 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7742DP 2002/95/EC Si7742DP-T1-GE3 11-Mar-11

    1D12

    Abstract: No abstract text available
    Text: New Product Si7716ADN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0135 at VGS = 10 V 16 0.0165 at VGS = 4.5 V 16 VDS (V) 30 • Halogen-free • TrenchFET Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested


    Original     		PDF Si7716ADN Si7716ADN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 1D12

    AN609

    Abstract: SI7754DP
    Text: Si7754DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si7754DP AN609, 22-Aug-08 AN609

    Si7788DP

    Abstract: No abstract text available
    Text: New Product Si7788DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0031 at VGS = 10 V 50 0.0041 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)


    Original     		PDF Si7788DP Si7788DP-T1-GE3 18-Jul-08

    transistor schottky model spice

    Abstract: Si7720DN
    Text: SPICE Device Model Si7720DN Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si7720DN S-82173 15-Sep-08 transistor schottky model spice

    TB-17

    Abstract: Si7742DP si7742
    Text: New Product Si7742DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0035 at VGS = 10 V 60 0.0045 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 34 nC • Halogen-free • SkyFET Monolithic TrenchFET


    Original     		PDF Si7742DP Si7742DP-T1-GE3 18-Jul-08 TB-17 si7742

    AN609

    Abstract: Si7784DP
    Text: Si7784DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si7784DP AN609, 17-Jul-08 AN609

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7758DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 60 0.0038 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 46 nC PowerPAK SO-8 S 6.15 mm • Notebook CPU Core


    Original     		PDF Si7758DP 2002/95/EC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7716ADN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0135 at VGS = 10 V 16 0.0165 at VGS = 4.5 V 16 VDS (V) 30 • Halogen-free • TrenchFET Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested


    Original     		PDF Si7716ADN Si7716ADN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si7705DN

    Abstract: No abstract text available
    Text: Si7705DN New Product Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) -20 D TrenchFETr Power MOSFETS: 1.8-V Rated D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile


    Original     		PDF Si7705DN 07-mm S-22520--Rev. 27-Jan-03

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7758DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 60 0.0038 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 46 nC PowerPAK SO-8 S 6.15 mm • Notebook CPU Core


    Original     		PDF Si7758DP 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0038 at VGS = 10 V 60 0.0047 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7774DP 2002/95/EC Si7774DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7742DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0035 at VGS = 10 V 60 0.0045 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 34 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7742DP 2002/95/EC Si7742DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si7703EDN

    Abstract: No abstract text available
    Text: SPICE Device Model Si7703EDN Vishay Siliconix P-Channel 20-V D-S MOSFET With Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7703EDN