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    4604 mosfet

    Abstract: 73839 4435 mosfet 4435 m 4604 siliconix 4435 AN609
    Text: Si7436DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si7436DP AN609 03-Mar-06 4604 mosfet 73839 4435 mosfet 4435 m 4604 siliconix 4435

    si7436

    Abstract: S488
    Text: Si7436DP New Product Vishay Siliconix N-Channel 30–V D–S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0045 at VGS = 10 V 30 0.0062 at VGS = 4.5 V 30 VDS (V) 30 FEATURES D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II Power RoHS* MOSFET Technology


    Original     		PDF Si7436DP 07-mm Si7436DP-T1 08-Apr-05 si7436 S488