SI7403DN Search Results

SI7403DN Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Si7403DN		Vishay Intertechnology	P-Channel 20-V (D-S) MOSFET		Original	PDF
SI7403DN		Vishay Siliconix	P-Channel 20-V (D-S) MOSFET		Original	PDF
Si7403DN SPICE Device Model		Vishay	P-Channel 2.5-V (G-S) MOSFET		Original	PDF

SI7403DN Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si7403DN Abstract: No abstract text available Text: Si7403DN New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES rDS(on) (W) ID (A) 0.1 @ VGS = –4.5 V –4.5 0.135 @ VGS = –2.5 V –3.8 D TrenchFETr Power MOSFETS: 2.5-V Rated D New PowerPAKt Package – Low Thermal Resistance, RthJC	Original	Si7403DN 07-mm 18-Jul-08	PDF
MOSFET 2358 Abstract: 4833 AN609 Si7403DN Text: Si7403DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si7403DN AN609 28-Nov-05 MOSFET 2358 4833	PDF
71560 Abstract: Si7403DN Text: SPICE Device Model Si7403DN Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si7403DN 22-Jan-02 71560	PDF
Si7403BDN-T1-E3 Abstract: 1212-8 PowerPAK 1212-8 Si7403BDN Si7403DN Text: Specification Comparison Vishay Siliconix Si7403BDN vs. Si7403DN Description: P-Channel, 20 V D-S MOSFET Package: PowerPAK 1212-8 Pin Out: Identical Part Number Replacements: Si7403BDN-T1-E3 Replaces Si7403DN-T1-E3 Si7403BDN-T1 Replaces Si7403DN-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	Si7403BDN Si7403DN Si7403BDN-T1-E3 Si7403DN-T1-E3 Si7403BDN-T1 Si7403DN-T1 1212-8 PowerPAK 1212-8	PDF
Si7403DN Abstract: No abstract text available Text: Si7403DN New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES rDS(on) (W) ID (A) 0.1 @ VGS = –4.5 V –4.5 0.135 @ VGS = –2.5 V –3.8 D TrenchFETr Power MOSFETS: 2.5-V Rated D New PowerPAKt Package – Low Thermal Resistance, RthJC	Original	Si7403DN 07-mm S-03390--Rev. 02-Apr-01	PDF
Untitled Abstract: No abstract text available Text: Si7403DN New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES rDS(on) (W) ID (A) 0.1 @ VGS = –4.5 V –4.5 0.135 @ VGS = –2.5 V –3.8 D TrenchFETr Power MOSFETS: 2.5-V Rated D New PowerPAKt Package – Low Thermal Resistance, RthJC	Original	Si7403DN 07-mm 08-Apr-05	PDF