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    SI5975 Price and Stock

    Vishay Siliconix SI5975DC-T1-E3

    MOSFET 2P-CH 12V 3.1A 1206-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI5975DC-T1-E3 Reel 3,000
    • 1 -
    • 10 -
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    • 1000 -
    • 10000 $0.775
    		Buy Now

    Vishay Siliconix SI5975DC-T1-GE3

    MOSFET 2P-CH 12V 3.1A 1206-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI5975DC-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.775
    		Buy Now

    SI5975 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si5975DC Vishay Intertechnology Dual P-Channel 12-V (D-S) MOSFET Original PDF
    SI5975DC Vishay Siliconix MOSFETs Original PDF
    Si5975DC SPICE Device Model Vishay Dual P-Channel 12-V (D-S) MOSFET Original PDF
    Si5975DC-T1 Vishay Intertechnology Dual P-Channel 12-V (D-S) MOSFET Original PDF
    SI5975DC-T1 Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET Original PDF
    SI5975DC-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 3.1A CHIPFET Original PDF
    SI5975DC-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 3.1A CHIPFET Original PDF

    SI5975 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si5975DC Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.086 at VGS = - 4.5 V - 4.1 0.127 at VGS = - 2.5 V - 3.4 0.164 at VGS = - 1.8 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si5975DC 2002/95/EC Si5975DC-T1-E3 Si5975DC-T1-GE3 11-Mar-11

    Si5975DC

    Abstract: Si5975DC-T1
    Text: Si5975DC Vishay Siliconix Dual P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.086 @ VGS = -4.5 V -4.1 -12 0.127 @ VGS = -2.5 V -3.4 0.164 @ VGS = -1.8 V -3.0 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


    Original     		PDF Si5975DC Si5975DC-T1 18-Jul-08

    Si5975DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5975DC Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5975DC S-60073Rev. 23-Jan-06

    Si5975DC

    Abstract: Vishay DaTE CODE 1206-8
    Text: Si5975DC New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.086 @ VGS = –4.5 V –4.1 0.127 @ VGS = –2.5 V –3.4 0.164 @ VGS = –1.8 V –3.0 S1 S2 1206-8 ChipFET 1 S1 D1 G1 G1 D1 G2 S2 D2


    Original     		PDF Si5975DC S-02198--Rev. 02-Oct-00 Vishay DaTE CODE 1206-8

    Si5975DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5975DC Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5975DC 13-Apr-01

    Untitled

    Abstract: No abstract text available
    Text: Si5975DC Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.086 at VGS = - 4.5 V - 4.1 0.127 at VGS = - 2.5 V - 3.4 0.164 at VGS = - 1.8 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si5975DC 2002/95/EC Si5975DC-T1-E3 Si5975DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si5975DC

    Abstract: Si5975DC-T1
    Text: Si5975DC Vishay Siliconix Dual P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.086 @ VGS = -4.5 V -4.1 -12 0.127 @ VGS = -2.5 V -3.4 0.164 @ VGS = -1.8 V -3.0 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


    Original     		PDF Si5975DC Si5975DC-T1 S-21251--Rev. 05-Aug-02

    AN609

    Abstract: Si5975DC
    Text: Si5975DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si5975DC AN609 27-Jun-07

    Untitled

    Abstract: No abstract text available
    Text: Si5975DC Vishay Siliconix Dual P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.086 @ VGS = -4.5 V -4.1 -12 0.127 @ VGS = -2.5 V -3.4 0.164 @ VGS = -1.8 V -3.0 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


    Original     		PDF Si5975DC Si5975DC-T1 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si5975DC Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.086 at VGS = - 4.5 V - 4.1 0.127 at VGS = - 2.5 V - 3.4 0.164 at VGS = - 1.8 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si5975DC 2002/95/EC Si5975DC-T1-E3 Si5975DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si5975DC

    Abstract: No abstract text available
    Text: Si5975DC Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.086 at VGS = - 4.5 V - 4.1 0.127 at VGS = - 2.5 V - 3.4 0.164 at VGS = - 1.8 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si5975DC 2002/95/EC Si5975DC-T1-E3 Si5975DC-T1-GE3 18-Jul-08

    Si5975DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5975DC Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5975DC 18-Jul-08

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8