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    SI551 Price and Stock

    Vishay Siliconix SI5515CDC-T1-GE3

    MOSFET N/P-CH 20V 4A 1206-8
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    DigiKey SI5515CDC-T1-GE3 Cut Tape 11,692 1
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    SI5515CDC-T1-GE3 Digi-Reel 11,692 1
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    SI5515CDC-T1-GE3 Reel 9,000 3,000
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    Vishay Siliconix SI5513CDC-T1-GE3

    MOSFET N/P-CH 20V 4A/3.7A 1206-8
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    DigiKey SI5513CDC-T1-GE3 Digi-Reel 8,100 1
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    SI5513CDC-T1-GE3 Cut Tape 8,100 1
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    SI5513CDC-T1-GE3 Reel 6,000 3,000
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    Quest Components SI5513CDC-T1-GE3 72
    • 1 $0.525
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    Vishay Siliconix SI5515CDC-T1-E3

    MOSFET N/P-CH 20V 4A 1206-8
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    DigiKey SI5515CDC-T1-E3 Digi-Reel 5,718 1
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    SI5515CDC-T1-E3 Cut Tape 5,718 1
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    SI5515CDC-T1-E3 Reel 3,000 3,000
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    Vishay Siliconix SI5513CDC-T1-E3

    MOSFET N/P-CH 20V 4A/3.7A 1206-8
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    DigiKey SI5513CDC-T1-E3 Cut Tape 5,386 1
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    SI5513CDC-T1-E3 Digi-Reel 5,386 1
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    SI5513CDC-T1-E3 Reel 3,000 3,000
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    Vishay Siliconix SI5517DU-T1-GE3

    MOSFET N/P-CH 20V 6A CHIPFET
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    DigiKey SI5517DU-T1-GE3 Digi-Reel 1,422 1
    • 1 $1.37
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    SI5517DU-T1-GE3 Cut Tape 1,422 1
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    RS SI5517DU-T1-GE3 Bulk 20
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    Find more SI551 price and stock on Findchips.com

    SI551 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI5511DC-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 4A 1206-8 Original PDF
    SI5511DC-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 4A 1206-8 Original PDF
    SI5513CDC-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 4A 1206-8 Original PDF
    SI5513CDC-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 4A 1206-8 Original PDF
    Si5513DC Vishay Intertechnology Complementary 20-V (D-S) MOSFET Original PDF
    SI5513DC Vishay Siliconix MOSFETs Original PDF
    Si5513DC SPICE Device Model Vishay Complementary 20-V (D-S) MOSFET Original PDF
    SI5513DC-T1 Vishay Intertechnology Complementary 20-V (D-S) MOSFET Original PDF
    SI5513DC-T1 Vishay Telefunken Original PDF
    SI5513DC-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 3.1A 1206-8 Original PDF
    SI5513DC-T1-E3 Vishay Telefunken Original PDF
    SI5513DC-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 3.1A 1206-8 Original PDF
    SI5515CDC-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 4A 1206-8 Original PDF
    SI5515CDC-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 4A 1206-8 Original PDF
    SI5515DC Vishay Siliconix Complementary 20-V (D-S) MOSFET Original PDF
    Si5515DC-T1-E3 Vishay Siliconix Complementary 20-V (D-S) MOSFET Original PDF
    SI5515DC-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 4.4A 1206-8 Original PDF
    SI5515DC-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 4.4A 1206-8 Original PDF
    SI5517DU Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET Original PDF
    SI5517DU-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 6A CHIPFET Original PDF

    SI551 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking code g1

    Abstract: mil 43
    Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V


    Original     		PDF Si5515CDC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking code g1 mil 43

    Si5513DC

    Abstract: Si5513DC-T1-E3
    Text: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 11-Mar-11

    74130

    Abstract: data sheet 74130 455 ch p 78 Si5517DU
    Text: SPICE Device Model Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5517DU S-52018Rev. 03-Oct-05 74130 data sheet 74130 455 ch p 78

    Untitled

    Abstract: No abstract text available
    Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V


    Original     		PDF Si5515CDC 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si5515CDC

    Abstract: 1206-8 chipfet
    Text: Si5515CDC Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g 0.050 at VGS = 1.8 V g 4 • TrenchFET Power MOSFETs


    Original     		PDF Si5515CDC Si5515CDC-T1-E3 18-Jul-08 1206-8 chipfet

    Untitled

    Abstract: No abstract text available
    Text: Si5515DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 N-Channel P-Channel - 20 0.052 at VGS = 1.8 V 5.2 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V


    Original     		PDF Si5515DC 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si5515DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 N-Channel P-Channel - 20 0.052 at VGS = 1.8 V 5.2 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V


    Original     		PDF Si5515DC 2002/95/EC Si5515DC-T1-E3 11-Mar-11

    AN609

    Abstract: No abstract text available
    Text: Si5519DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si5519DU AN609 10-Oct-07

    AN609

    Abstract: Si5513CDC
    Text: Si5513CDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si5513CDC AN609, 23-Jul-08 AN609

    Si5515DC

    Abstract: No abstract text available
    Text: Si5515DC Vishay Siliconix Complementary 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 APPLICATIONS 0.086 @ VGS = −4.5 V −4.1 D Load Switching for Portable Devices


    Original     		PDF Si5515DC 18-Jul-08

    74009

    Abstract: 4392 38544 AN609
    Text: Si5511DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si5511DC AN609 02-Oct-07 74009 4392 38544

    AN609

    Abstract: Si5515DC
    Text: Si5515DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si5515DC AN609 21-Jun-07

    Untitled

    Abstract: No abstract text available
    Text: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9


    Original     		PDF Si5513CDC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si5519DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 0.036 at VGS = 4.5 V 6.0 0.063 at VGS = 2.5 V 6.0 0.064 at VGS = - 4.5 V - 6.0 0.095 at VGS = - 2.5 V - 6.0 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω)


    Original     		PDF Si5519DU Si5519DU-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si5519DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 0.036 at VGS = 4.5 V 6.0 0.063 at VGS = 2.5 V 6.0 0.064 at VGS = - 4.5 V - 6.0 0.095 at VGS = - 2.5 V - 6.0 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω)


    Original     		PDF Si5519DU Si5519DU-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si5513DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5513DC S-60074Rev. 23-Jan-06

    Untitled

    Abstract: No abstract text available
    Text: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel - 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = - 4.5 V - 2.9 0.260 @ VGS = - 2.5 V - 2.2 D1


    Original     		PDF Si5513DC Si5513DC-T1 S-31263--Rev. 16-Jun-03

    SI5515DC

    Abstract: No abstract text available
    Text: Si5515DC New Product Vishay Siliconix Complementary 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 APPLICATIONS 0.086 @ VGS = - 4.5 V - 4.1 D Load Switching for Portable Devices


    Original     		PDF Si5515DC Si5515DC-T1 S-31407--Rev. 07-Jul-03

    Untitled

    Abstract: No abstract text available
    Text: Si5515DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 N-Channel P-Channel - 20 0.052 at VGS = 1.8 V 5.2 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V


    Original     		PDF Si5515DC 2002/95/EC Si5515DC-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel


    Original     		PDF Si5517DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si5513DC

    Abstract: Si5513DC-T1-E3
    Text: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel


    Original     		PDF Si5517DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5519DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 0.036 at VGS = 4.5 V 6.0 0.063 at VGS = 2.5 V 6.0 0.064 at VGS = - 4.5 V - 6.0 0.095 at VGS = - 2.5 V - 6.0 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω)


    Original     		PDF Si5519DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12