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    SI5499 Price and Stock

    Vishay Siliconix SI5499DC-T1-E3

    MOSFET P-CH 8V 6A 1206-8 CHIPFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI5499DC-T1-E3 Cut Tape 1
    • 1 $0.97
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    SI5499DC-T1-E3 Digi-Reel 1
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    SI5499DC-T1-E3 Reel 3,000
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    • 10000 $0.3632
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    Vishay Siliconix SI5499DC-T1-GE3

    MOSFET P-CH 8V 6A 1206-8 CHIPFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI5499DC-T1-GE3 Cut Tape 1
    • 1 $0.35
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    SI5499DC-T1-GE3 Reel 3,000
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    SI5499DC-T1-GE3 Digi-Reel 1
    • 1 $0.35
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    Vishay Intertechnologies SI5499DC-T1-E3

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    Bristol Electronics SI5499DC-T1-E3 3,000
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    Vishay Siliconix SI5499DCT1E3

    P-CHANNEL 1.5-V (G-S) MOSFET Power Field-Effect Transistor, 2.1A I(D), 8V, 0.036ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI5499DCT1E3 2,750
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    SI5499 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Si5499DC Vishay P-Channel 1.5V (G-S) MOSFET Original PDF
    SI5499DC-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 6A 1206-8 Original PDF
    SI5499DC-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 6A 1206-8 Original PDF

    SI5499 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si5499DC

    Abstract: pf42-08
    Text: New Product Si5499DC Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)e 0.036 at VGS = - 4.5 V -6 0.045 at VGS = - 2.5 V -6 0.056 at VGS = - 1.8 V -6 0.077 at VGS = - 1.5 V -6 VDS (V) -8 Qg (Typ.) • TrenchFET Power MOSFET: 1.5 V Rated


    Original     		PDF Si5499DC Si5499DC-T1-E3 18-Jul-08 pf42-08

    TB-17

    Abstract: Si5499DC
    Text: Si5499DC New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)e 0.036 @ VGS = −4.5 V −6 0.045 @ VGS = −2.5 V −6 0.056 @ VGS = −1.8 V −6 0.077 @ VGS = −1.5 V −6 VDS (V) −8 D TrenchFETr Power MOSFET: 1.5-V Rated


    Original     		PDF Si5499DC 08-Apr-05 TB-17

    7333-1

    Abstract: 50413 Si5499DC 73331 A41219
    Text: SPICE Device Model Si5499DC Vishay Siliconix P-Channel 8V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5499DC 18-Jul-08 7333-1 50413 73331 A41219

    7027a

    Abstract: No abstract text available
    Text: Si5499DC Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.036 at VGS = - 4.5 V -6 0.045 at VGS = - 2.5 V -6 0.056 at VGS = - 1.8 V -6 0.077 at VGS = - 1.5 V -6 VDS (V) -8 Qg (Typ.) 14 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5499DC Si5499DC-T1-E3 Si5499DC-T1-GE3 18-Jul-08 7027a

    TB-17

    Abstract: Si5499DC
    Text: Si5499DC Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.036 at VGS = - 4.5 V -6 0.045 at VGS = - 2.5 V -6 0.056 at VGS = - 1.8 V -6 0.077 at VGS = - 1.5 V -6 VDS (V) -8 Qg (Typ.) 14 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5499DC Si5499DC-T1-E3 18-Jul-08 TB-17

    A 2733

    Abstract: 2231 3500 2231 AN609 Si5499DC 27273
    Text: Si5499DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si5499DC AN609 20-Jun-07 A 2733 2231 3500 2231 27273

    Si5499DC

    Abstract: S8019
    Text: New Product Si5499DC Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)e 0.036 at VGS = - 4.5 V -6 0.045 at VGS = - 2.5 V -6 0.056 at VGS = - 1.8 V -6 0.077 at VGS = - 1.5 V -6 VDS (V) -8 Qg (Typ.) • TrenchFET Power MOSFET: 1.5 V Rated


    Original     		PDF Si5499DC Si5499DC-T1-E3 08-Apr-05 S8019

    TB-17

    Abstract: Si5499DC
    Text: Si5499DC New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)e 0.036 @ VGS = −4.5 V −6 0.045 @ VGS = −2.5 V −6 0.056 @ VGS = −1.8 V −6 0.077 @ VGS = −1.5 V −6 VDS (V) −8 D TrenchFETr Power MOSFET: 1.5-V Rated


    Original     		PDF Si5499DC S-50397--Rev. 07-Mar-05 TB-17

    SMD resistors 1806

    Abstract: SMD zener diode 202 1N4148WS
    Text: Cell-phone Table of Contents AUDIO, Audio Control. 3 AUDIO, Earpiece. 5


    Original     		PDF HPC0201A HPC0402A HPC0402B/C HPC0603A SMD resistors 1806 SMD zener diode 202 1N4148WS

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    philips resistor

    Abstract: mosfet 4800 sot26 sot363 transistor 4800 mosfet philips data pdta LMN200B01 Si3863DV si5499 EMF32 LMN200B02
    Text: New Product Announcement May 16, 2006 Announcing “NEW” MOSFET + Transistor Complex Arrays in SOT-26 LMN200B01 / LMN400B01 and SOT 363 (LMN200B02 / LMN400E01) Packages A 6 B C 5 4 H 1 K M 2 3 J LMN200B01 / LMN400B01 D Min 0.35 1.5 2.7 ⎯ ⎯ 2.9 0.013


    Original     		PDF OT-26 LMN200B01 LMN400B01) LMN200B02 LMN400E01) LMN400B01 LMN400E01 OT-363 philips resistor mosfet 4800 sot26 sot363 transistor 4800 mosfet philips data pdta Si3863DV si5499 EMF32

    BS250KL

    Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
    Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477