Si4971DY
Abstract: Si4971DY-T1
Text: Si4971DY New Product Vishay Siliconix Dual P-Channel 25-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.026 @ VGS = - 10 V - 7.2 0.033 @ VGS = - 6 V - 6.4 D TrenchFETr Power MOSFET D 25-V VGS Provides Extra Head Room for Safe Operation
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Si4971DY
Si4971DY-T1
S-03598--Rev.
31-Mar-03
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Si4971DY
Abstract: Si4971DY-T1 Si4971DY-T1-E3
Text: Si4971DY Vishay Siliconix New Product Dual P-Channel 25-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.026 at VGS = - 10 V - 7.2 0.033 at VGS = - 6 V - 6.4 • TrenchFET Power MOSFET • 25 V VGS Provides Extra Head Room for Safe Operation
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Si4971DY
Si4971DY-T1
Si4971DY-T1-E3
18-Jul-08
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4914
Abstract: 4914 mosfet mosfet 4914 AN609 Si4971DY
Text: Si4971DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4971DY
AN609
19-Mar-07
4914
4914 mosfet
mosfet 4914
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Untitled
Abstract: No abstract text available
Text: Si4971DY New Product Vishay Siliconix Dual P-Channel 25-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.026 @ VGS = - 10 V - 7.2 0.033 @ VGS = - 6 V - 6.4 D TrenchFETr Power MOSFET D 25-V VGS Provides Extra Head Room for Safe Operation
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Si4971DY
Si4971DY-T1
08-Apr-05
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Si4971DY
Abstract: Si4971DY-T1 Si4971DY-T1-E3
Text: Si4971DY Vishay Siliconix New Product Dual P-Channel 25-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.026 at VGS = - 10 V - 7.2 0.033 at VGS = - 6 V - 6.4 • TrenchFET Power MOSFET • 25 V VGS Provides Extra Head Room for Safe Operation
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Si4971DY
Si4971DY-T1
Si4971DY-T1-E3
08-Apr-05
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s2 on of power switch 5 A
Abstract: mosfe Si4971DY Si4971DY-T1 Si4971DY-T1-E3 72174 S-61006-Rev
Text: Si4971DY Vishay Siliconix New Product Dual P-Channel 25-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.026 at VGS = - 10 V - 7.2 0.033 at VGS = - 6 V - 6.4 • TrenchFET Power MOSFET • 25 V VGS Provides Extra Head Room for Safe Operation
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Si4971DY
Si4971DY-T1
Si4971DY-T1-E3
S-61006-Rev.
12-Jun-06
s2 on of power switch 5 A
mosfe
72174
S-61006-Rev
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Si4971DY
Abstract: No abstract text available
Text: SPICE Device Model Si4971DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4971DY
0-to-10V
30-Apr-03
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BS250KL
Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SC-75
SC-75A
SC-89
BS250KL
tsop6 marking 345
SUD50P08
SI3437
SUD19P06-60L
MOSFET SUB75P03
tsop6 marking 443
Si5947DU
Si1471DH
SI1073X
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