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    SI4922 Price and Stock

    Vishay Siliconix SI4922BDY-T1-E3

    MOSFET 2N-CH 30V 8A 8SOIC
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    DigiKey SI4922BDY-T1-E3 Reel 10,000 2,500
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    RS SI4922BDY-T1-E3 Bulk 2,500
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    • 10000 $1.23
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    Vishay Intertechnologies SI4922BDY-T1-GE3

    Transistor MOSFET Array Dual N-CH 30V 8A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4922BDY-T1-GE3)
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    Avnet Americas SI4922BDY-T1-GE3 Reel 2,500
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    Newark SI4922BDY-T1-GE3 Reel 2,500
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    SI4922BDY-T1-GE3 Cut Tape 2,500
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    TTI SI4922BDY-T1-GE3 Reel 5,000 2,500
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    EBV Elektronik SI4922BDY-T1-GE3 10 Weeks 2,500
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    Vishay Intertechnologies SI4922BDY-T1-E3

    Transistor MOSFET Array Dual N-CH 30V 8A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4922BDY-T1-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4922BDY-T1-E3 Reel 2,500
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    Bristol Electronics SI4922BDY-T1-E3 596
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    Quest Components SI4922BDY-T1-E3 476
    • 1 $2.4195
    • 10 $2.4195
    • 100 $1.2098
    • 1000 $0.9678
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    TTI SI4922BDY-T1-E3 Reel 2,500
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    Avnet Asia SI4922BDY-T1-E3 2,500
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    Vishay Intertechnologies SI4922BDY-T1

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    Bristol Electronics SI4922BDY-T1 1,057
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    Vishay Intertechnologies SI4922BDY

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    Bristol Electronics SI4922BDY 496
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    Find more SI4922 price and stock on Findchips.com

    SI4922 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4922BDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8A 8-SOIC Original PDF
    SI4922BDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8A 8-SOIC Original PDF
    SI4922DY Vishay XTR, S/M, 30V, DUAL N-CH, SO-8 Original PDF
    Si4922DY Vishay Intertechnology Dual N-Channel 30-V (D-S) MOSFET Original PDF
    SI4922DY Vishay Siliconix XTR, S/M, 30V, DUAL N-CH, SO-8 Original PDF
    SI4922DY Vishay Siliconix MOSFETs Original PDF
    SI4922DY Vishay Siliconix SPICE Device Model Si4922DY Original PDF
    Si4922DY SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF

    SI4922 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4922BDY

    Abstract: SI4922BDY-T1-E3
    Text: New Product Si4922BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) rDS(on) (Ω) 0.016 at VGS = 10 V 8 30 0.018 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 8 • TrenchFET Power MOSFET • 100 % Rg and UIS tested


    Original     		PDF Si4922BDY Si4922BDY-T1-E3 08-Apr-05

    74856

    Abstract: Si4922BDY
    Text: SPICE Device Model Si4922BDY Vishay Siliconix Dual N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4922BDY S-70711Rev. 23-Apr-07 74856

    Si4922BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4922BDY Vishay Siliconix Dual N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4922BDY 18-Jul-08

    3771

    Abstract: AN609 Si4922DY
    Text: Si4922DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4922DY AN609 19-Jan-06 3771

    Si4922DY

    Abstract: No abstract text available
    Text: Si4922DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 8.8 30 0.018 @ VGS = 4.5 V 8.3 0.024 @ VGS = 2.5 V 7.2 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View


    Original     		PDF Si4922DY 25lectual 18-Jul-08

    4606 mosfet

    Abstract: A 4606 4606 4438 transistor 4606 mosfet AN609 Si4922BDY
    Text: Si4922BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4922BDY AN609 12-Jun-07 4606 mosfet A 4606 4606 4438 transistor 4606 mosfet

    Si4922DY

    Abstract: No abstract text available
    Text: Si4922DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 8.8 30 0.018 @ VGS = 4.5 V 8.3 0.024 @ VGS = 2.5 V 7.2 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View


    Original     		PDF Si4922DY 25ransient S-20112--Rev. 11-Mar-02

    SI4922BDY-T1-E3

    Abstract: No abstract text available
    Text: Si4922BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, e 0.016 at VGS = 10 V 8 30 0.018 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4922BDY 2002/95/EC Si4922BDY-T1-E3 Si4922BDY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4922DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 8.8 30 0.018 @ VGS = 4.5 V 8.3 0.024 @ VGS = 2.5 V 7.2 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View


    Original     		PDF Si4922DY 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4922DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 8.8 30 0.018 @ VGS = 4.5 V 8.3 0.024 @ VGS = 2.5 V 7.2 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View


    Original     		PDF Si4922DY S-01829--Rev. 21-Aug-00

    Si4922DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4922DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4922DY 18-Jul-08

    Si4922BDY

    Abstract: Si4922DY Si4922DY-T1 si4922dy-t1-e3
    Text: Specification Comparison Vishay Siliconix Si4922BDY vs. Si4922DY Description: Package: Pin Out: Dual P-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4922BDY-T1-E3 replaces Si4922DY-T1-E3 Si4922BDY-T1-E3 replaces Si4922DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si4922BDY Si4922DY Si4922BDY-T1-E3 Si4922DY-T1-E3 Si4922DY-T1 29-Feb-08

    Si4922DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4922DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4922DY S-52575Rev. 02-Jan-06

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4922BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) rDS(on) (Ω) 0.016 at VGS = 10 V 8 30 0.018 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 8 • TrenchFET Power MOSFET • 100 % Rg and UIS tested


    Original     		PDF Si4922BDY Si4922BDY-T1-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4922BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, e 0.016 at VGS = 10 V 8 30 0.018 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4922BDY 2002/95/EC Si4922BDY-T1-E3 Si4922BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4922DY

    Abstract: No abstract text available
    Text: Si4922DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 8.8 30 0.018 @ VGS = 4.5 V 8.3 0.024 @ VGS = 2.5 V 7.2 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View


    Original     		PDF Si4922DY 25ransient S-01829--Rev. 21-Aug-00

    Untitled

    Abstract: No abstract text available
    Text: Si4922BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, e 0.016 at VGS = 10 V 8 30 0.018 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4922BDY 2002/96/EC Si4922BDY-T1-E3 Si4922BDY-T1-GE3 18-Jul-08

    Si4922BDY

    Abstract: si4922bdy-t1-e3
    Text: Si4922BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, e 0.016 at VGS = 10 V 8 30 0.018 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4922BDY 2002/95/EC Si4922BDY-T1-E3 Si4922BDY-T1-GE3 18-Jul-08

    Si4922DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4922DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4922DY 16-Apr-01

    Untitled

    Abstract: No abstract text available
    Text: Si4922BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, e 0.016 at VGS = 10 V 8 30 0.018 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4922BDY 2002/95/EC Si4922BDY-T1-E3 Si4922BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    6130IRZ

    Abstract: ISL6123 ISL6123IR ISL6124 ISL6125 ISL6126 ISL6127 ISL6128 ISL6130
    Text: ISL6123, ISL6124, ISL6125, ISL6126, ISL6127, ISL6128, ISL6130 Data Sheet February 5, 2007 FN9005.8 Power Sequencing Controllers Features The Intersil ISL6123, ISL6124, ISL6125, ISL6126, ISL6127, ISL6128 and ISL6130 are integrated four channel controlled-on/controlled-off power-supply sequencers with


    Original     		PDF ISL6123, ISL6124, ISL6125, ISL6126, ISL6127, ISL6128, ISL6130 FN9005 6130IRZ ISL6123 ISL6123IR ISL6124 ISL6125 ISL6126 ISL6127 ISL6128 ISL6130

    pulse load resistors wattage calculation

    Abstract: zener diode 18V 1W, 5% philips BZX84C18 BZX84C8V2 IRF7822 MIC2584 MIC2585 Si7892DP
    Text: MIC2584/2585 Micrel MIC2584/MIC2585 Dual-Channel Hot Swap Controller/Sequencer General Description Features The MIC2584 and MIC2585 are dual-channel positive voltage hot swap controllers designed to facilitate the safe insertion of boards into live system backplanes. The MIC2584


    Original     		PDF MIC2584/2585 MIC2584/MIC2585 MIC2584 MIC2585 MIC2584 16-pin 24-pin MIC2584/85 MIC2585 pulse load resistors wattage calculation zener diode 18V 1W, 5% philips BZX84C18 BZX84C8V2 IRF7822 Si7892DP

    DO5010P-332HC

    Abstract: IHLP2525CZER1R0M01 MBR0530 Si4922DY SP6132 SP6134 SP6139
    Text: Advanced SP6139 Wide Input, 1.3MHz Synchronous PWM Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ VCC 1 2.5V to 20V Step Down Achieved Using Dual Input Small 10-Pin MSOP Package Up to 15A Ouput Capability Highly Integrated Design, Minimal Components


    Original     		PDF SP6139 10-Pin SP6139EU/TR SP6139EU-L/TR SP6139 DO5010P-332HC IHLP2525CZER1R0M01 MBR0530 Si4922DY SP6132 SP6134

    SP6139

    Abstract: Si4922DY SP6132 SP6134 DO5010P-332HC MBR0530 SD25-2R2 GL10 Si4336DY
    Text: SP6139 Wide Input, 1.3MHz Synchronous PWM Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ VCC 1 2.5V to 20V Step Down Achieved Using Dual Input Small 10-Pin MSOP Package Up to 15A Ouput Capability Highly Integrated Design, Minimal Components


    Original     		PDF SP6139 10-Pin SP6139EU/TR SP6139EU-L/TR SP6139 Si4922DY SP6132 SP6134 DO5010P-332HC MBR0530 SD25-2R2 GL10 Si4336DY