Si4873DY-T1
Abstract: Si4873DY Si4873DY-T1-E3
Text: New Product Si4873DY Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.016 at VGS = - 4.5 V - 8.3 0.021 at VGS = - 2.5 V - 7.0 0.028 at VGS = - 1.8 V - 6.0 • TrenchFET Power MOSFET
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Si4873DY
Si4873DY-T1
Si4873DY-T1-E3
18-Jul-08
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Si4873DY-T1-E3
Abstract: Si4873DY-T1 MARKING JM Si4873DY
Text: Si4873DY Vishay Siliconix New Product P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.016 at VGS = - 4.5 V - 8.3 0.021 at VGS = - 2.5 V - 7.0 0.028 at VGS = - 1.8 V - 6.0 • TrenchFET Power MOSFET
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Si4873DY
Si4873DY-T1
Si4873DY-T1-E3
S-61005-Rev.
12-Jun-06
MARKING JM
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Untitled
Abstract: No abstract text available
Text: Si4873DY Vishay Siliconix New Product P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.016 at VGS = - 4.5 V - 8.3 0.021 at VGS = - 2.5 V - 7.0 0.028 at VGS = - 1.8 V - 6.0 • TrenchFET Power MOSFET
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Si4873DY
Si4873DY-T1
Si4873DY-T1-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4873DY New Product Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES rDS(on) (W) ID (A) 0.016 @ VGS = - 4.5 V - 8.3 0.021 @ VGS = - 2.5 V - 7.0 APPLICATIONS 0.028 @ VGS = - 1.8 V - 6.0 D DC/DC Converters
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Si4873DY
08-Apr-05
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Si4873DY
Abstract: No abstract text available
Text: Si4873DY New Product Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES rDS(on) (W) ID (A) 0.016 @ VGS = - 4.5 V - 8.3 0.021 @ VGS = - 2.5 V - 7.0 APPLICATIONS 0.028 @ VGS = - 1.8 V - 6.0 D DC/DC Converters
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Si4873DY
S-03154--Rev.
17-Feb-03
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Untitled
Abstract: No abstract text available
Text: New Product Si4873DY Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.016 at VGS = - 4.5 V - 8.3 0.021 at VGS = - 2.5 V - 7.0 0.028 at VGS = - 1.8 V - 6.0 • TrenchFET Power MOSFET
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Si4873DY
Si4873DY-T1
Si4873DY-T1-E3
08-Apr-05
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SAMSUNG RV410
Abstract: SMB29 isl6260 PC87541 R141 237 000 SCK 054 VARISTOR quanta foxconn R648 PCI7412
Text: 1 2 3 4 5 6 7 8 MA6 BLOCK DIAGRAM CPU Yonah/Merom USB USB4 A 14.318MHz MAX1993 VGACORE (1.2V/NB_CORE/1.25V) PG 3 1394 X1 ICSXXXX 56pins 479 Pins (uPGA) MODEM PCI-E X1 CRT/S-Video CPU CORE ISL6260+6208 POWER 1.2V/44A PG 45 OSC14M HTREFCLK NBSRCCLK, NBSRCCLK#
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318MHz
10/100/1G
MAX1993
56pins
OSC14M
ISL6260
V/44A
MAX8743
1439/Correct
SAMSUNG RV410
SMB29
PC87541
R141 237 000
SCK 054 VARISTOR
quanta
foxconn
R648
PCI7412
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q406 transistor
Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SiP41109
SiP41110
SiP41111
75/2A
q406 transistor
SI9120
equivalent Q406
q406
SUM65N20-30
Si3456BDV SPICE Device Model
sud*50n025
Si4304DY
0038 tsop
Si2325DS
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sud*50n025-06p
Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m
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VSA-SG0019-0310
sud*50n025-06p
SUD70N03-04P
SI9120
sum45n25
SI9119
Si7810DN
sud*50n025-09p
SI2301ADS
SI4732CY
si9110
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