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    SI446 Price and Stock

    Silicon Laboratories Inc SI4463-C2A-GMR

    IC RF TXRX ISM<1GHZ 20QFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4463-C2A-GMR Reel 120,000 2,500
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    • 10000 $4.0625
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    Mouser Electronics SI4463-C2A-GMR 29,310
    • 1 $5.21
    • 10 $4.86
    • 100 $4.16
    • 1000 $4.07
    • 10000 $4.06
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    Verical SI4463-C2A-GMR 35 2
    • 1 -
    • 10 $4.623
    • 100 $4.623
    • 1000 $4.623
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    Newark SI4463-C2A-GMR Cut Tape 250 1
    • 1 $5.76
    • 10 $5.29
    • 100 $4.53
    • 1000 $4.31
    • 10000 $4.31
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    Quest Components SI4463-C2A-GMR 6,000
    • 1 $9.54
    • 10 $9.54
    • 100 $9.54
    • 1000 $4.77
    • 10000 $4.77
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    SI4463-C2A-GMR 311
    • 1 $10.308
    • 10 $10.308
    • 100 $6.3566
    • 1000 $5.6694
    • 10000 $5.6694
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    Chip1Stop SI4463-C2A-GMR 52,500
    • 1 -
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    • 10000 $4.143
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    Symmetry Electronics SI4463-C2A-GMR 1
    • 1 $4.06
    • 10 $3.9
    • 100 $3.9
    • 1000 $3.9
    • 10000 $3.9
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    Vyrian SI4463-C2A-GMR 20,000
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    Win Source Electronics SI4463-C2A-GMR 20,100
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    • 100 $1.445
    • 1000 $1.174
    • 10000 $1.174
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    Silicon Laboratories Inc SI4461-B1B-FMR

    IC RF TXRX ISM<1GHZ 20QFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4461-B1B-FMR Reel 70,000 2,500
    • 1 -
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    • 1000 -
    • 10000 $3.6875
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    SI4461-B1B-FMR Cut Tape 6,736 1
    • 1 $5.03
    • 10 $4.608
    • 100 $3.7701
    • 1000 $3.68752
    • 10000 $3.68752
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    Mouser Electronics SI4461-B1B-FMR 43,016
    • 1 $5.03
    • 10 $4.61
    • 100 $3.77
    • 1000 $3.69
    • 10000 $3.68
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    Ameya Holding Limited SI4461-B1B-FMR 3,470
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    Chip Stock SI4461-B1B-FMR 2,500
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    Symmetry Electronics SI4461-B1B-FMR 1
    • 1 $3.94
    • 10 $3.94
    • 100 $3.94
    • 1000 $3.94
    • 10000 $3.94
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    Win Source Electronics SI4461-B1B-FMR 45,100
    • 1 -
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    • 100 $2.732
    • 1000 $2.45
    • 10000 $2.45
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    Silicon Laboratories Inc SI4460-B1B-FMR

    IC RF TXRX ISM<1GHZ 20QFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4460-B1B-FMR Reel 57,500 2,500
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    • 10000 $3.05
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    SI4460-B1B-FMR Cut Tape 2,507 1
    • 1 $4.85
    • 10 $4.331
    • 100 $3.5514
    • 1000 $3.05
    • 10000 $3.05
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    Mouser Electronics SI4460-B1B-FMR 393
    • 1 $4.41
    • 10 $4.03
    • 100 $3.5
    • 1000 $3.36
    • 10000 $3.36
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    Verical SI4460-B1B-FMR 1,500 2
    • 1 -
    • 10 $3.786
    • 100 $3.786
    • 1000 $3.786
    • 10000 $3.786
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    Arrow Electronics SI4460-B1B-FMR Cut Strips 1,500 12 Weeks 1
    • 1 $3.786
    • 10 $3.551
    • 100 $3.336
    • 1000 $3.221
    • 10000 $3.221
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    Quest Components SI4460-B1B-FMR 36
    • 1 $11.6235
    • 10 $10.332
    • 100 $9.5571
    • 1000 $9.5571
    • 10000 $9.5571
    		Buy Now

    Silicon Laboratories Inc SI4461-C2A-GMR

    IC RF TXRX ISM<1GHZ 20QFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4461-C2A-GMR Reel 52,500 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $3.6875
    		Buy Now
    Mouser Electronics SI4461-C2A-GMR 51,651
    • 1 $4.47
    • 10 $4.25
    • 100 $3.78
    • 1000 $3.69
    • 10000 $3.64
    		Buy Now
    Verical SI4461-C2A-GMR 48,641 2
    • 1 -
    • 10 $4.905
    • 100 $4.905
    • 1000 $4.905
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    Newark SI4461-C2A-GMR Cut Tape 5,844 1
    • 1 $5.13
    • 10 $4.8
    • 100 $4.12
    • 1000 $3.91
    • 10000 $3.91
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    Chip1Stop SI4461-C2A-GMR 48,641
    • 1 $4.31
    • 10 $3.81
    • 100 $3.81
    • 1000 $3.81
    • 10000 $3.81
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    Symmetry Electronics SI4461-C2A-GMR 1
    • 1 $3.94
    • 10 $3.94
    • 100 $3.94
    • 1000 $3.94
    • 10000 $3.94
    		Buy Now

    Silicon Laboratories Inc SI4463-B1B-FMR

    IC RF TXRX ISM<1GHZ 20QFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4463-B1B-FMR Reel 42,500 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $4.0625
    		Buy Now
    SI4463-B1B-FMR Cut Tape 3,819 1
    • 1 $5.54
    • 10 $5.076
    • 100 $4.1535
    • 1000 $4.06248
    • 10000 $4.06248
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    Mouser Electronics SI4463-B1B-FMR 32,955
    • 1 $4.93
    • 10 $4.69
    • 100 $4.16
    • 1000 $4.07
    • 10000 $4.02
    		Buy Now
    Win Source Electronics SI4463-B1B-FMR 52,950
    • 1 -
    • 10 -
    • 100 $1.528
    • 1000 $1.282
    • 10000 $1.282
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    Find more SI446 price and stock on Findchips.com

    SI446 Datasheets (69)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4460-B0B-FM Silicon Laboratories RF Transceivers, RF/IF and RFID, TRANSCEIVER RF EZRADIO PRO 20QFN Original PDF
    SI4460-B1B-FM Silicon Laboratories RF Transceivers, RF/IF and RFID, TXRX ISM EZ RADIO PRO 20QFN Original PDF
    SI4460-B1B-FMR Silicon Laboratories RF Transceivers, RF/IF and RFID, TXRX ISM EZ RADIO PRO 20QFN Original PDF
    SI4460-C2A-GM Silicon Labs RF/IF and RFID - RF Transceiver ICs - IC RF TXRX+MCU ISM<1GHZ 20-VFQFN Original PDF
    SI4460-C2A-GMR Silicon Labs RF/IF and RFID - RF Transceiver ICs - IC RF TXRX+MCU ISM<1GHZ 20-VFQFN Original PDF
    SI4461-868-DK Silicon Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, KIT DEV WIRELESS SI4461 868MHZ Original PDF
    SI4461-B0B-FM Silicon Laboratories RF Transceivers, RF/IF and RFID, TRANSCEIVER RF EZRADIO PRO 20QFN Original PDF
    SI4461-B1B-FM Silicon Laboratories RF Transceivers, RF/IF and RFID, TRANSCEIVER RF EZRADIO PRO 20QFN Original PDF
    SI4461-B1B-FMR Silicon Laboratories RF Transceivers, RF/IF and RFID, TRANSCEIVER RF EZRADIO PRO 20QFN Original PDF
    SI4461-C2A-GM Silicon Labs RF/IF and RFID - RF Transceiver ICs - IC RF TXRX+MCU ISM<1GHZ 20-VFQFN Original PDF
    SI4461-C2A-GMR Silicon Labs RF/IF and RFID - RF Transceiver ICs - IC RF TXRX+MCU ISM<1GHZ 20-VFQFN Original PDF
    SI4462DY Vishay Siliconix MOSFETs Original PDF
    Si4462DY SPICE Device Model Vishay N-Channel 200-V (D-S) MOSFET Original PDF
    SI4462DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 1.15A 8-SOIC Original PDF
    SI4462DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 1.15A 8-SOIC Original PDF
    SI4463-915-DK Silicon Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, KIT DEV WIRELESS SI4463 915MHZ Original PDF
    SI4463-B0B-FM Silicon Laboratories RF Transceivers, RF/IF and RFID, TRANSCEIVER RF EZRADIO PRO 20QFN Original PDF
    SI4463-B1B-FM Silicon Laboratories RF Transceivers, RF/IF and RFID, TXRX ISM EZ RADIO PRO 20QFN Original PDF
    SI4463-B1B-FMR Silicon Laboratories RF Transceivers, RF/IF and RFID, TXRX ISM EZ RADIO PRO 20QFN Original PDF
    SI4463BDY Vishay Siliconix MOSFETs Original PDF

    SI446 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AN658 S i 4 4 6 X AND A R I B S TD - T 6 7 C O M P L I A N C E AT 4 2 6 – 4 2 9 M H Z 1. Introduction This application note demonstrates the compliance of Si446x-B0 RFICs with the regulatory requirements of ARIB STD-T67 V1.1, dated November 30th 2005 in the 426/429 MHz band. Although other members of the Si446x


    Original     		PDF AN658 Si446x-B0 STD-T67 Si446x Si4461-B0 4461-TSC13D434 0x2201

    NS4160

    Abstract: Si4463DY 4463 SO-8 4463 SO8 MOSFET
    Text: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .


    Original     		PDF Si4463DY NS4160 4463 SO-8 4463 SO8 MOSFET

    4463 SO8 MOSFET

    Abstract: 4463 B
    Text: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .


    Original     		PDF Si4463DY 4463 SO8 MOSFET 4463 B

    Untitled

    Abstract: No abstract text available
    Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4463DY S-51654--Rev. 21-Apr-97

    74681

    Abstract: 7815 7815 DATASHEET M 1357 AN609 Si4465ADY
    Text: Si4465ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4465ADY AN609 08-May-07 74681 7815 7815 DATASHEET M 1357

    Si4465ADY

    Abstract: 73856
    Text: Si4465ADY Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ) 55 nC FEATURES • TrenchFET Power MOSFET


    Original     		PDF Si4465ADY Si4465ADY-T1-E3 08-Apr-05 73856

    Untitled

    Abstract: No abstract text available
    Text: Si4465ADY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ.) 55 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si4465ADY Si4465ADY-T1-E3 Si4465ADY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4462DY Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 1.50 0.510 at VGS = 6.0 V 1.45 • TrenchFET Power MOSFET • PWM Optimized for fast Switching Pb-free Available


    Original     		PDF Si4462DY Si4462DY-T1 Si4462DY-T1-E3 18-Jul-08

    95-4066

    Abstract: 3335 9828 AN609 Si4463BDY 69005
    Text: Si4463BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4463BDY AN609 19-Mar-07 95-4066 3335 9828 69005

    Si4461DY

    Abstract: 75576 0723 AN609 si4461
    Text: Si4461DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si4461DY AN609, 30-Jul-08 75576 0723 AN609 si4461

    Si4464DY

    Abstract: Si4464DY-T1-E3 Si4464DY-T1-GE3 720-51 72051
    Text: Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Low Qg and Low Rg


    Original     		PDF Si4464DY 2002/95/EC Si4464DY-T1-E3 Si4464DY-T1-GE3 18-Jul-08 720-51 72051

    AN609

    Abstract: Si4462DY 784403
    Text: Si4462DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4462DY AN609 19-Mar-07 784403

    74222

    Abstract: Si4451DY Si4451DY-T1-E3 Si4451DY-T1 Si4467DY Si4467DY-T1
    Text: Specification Comparison Vishay Siliconix Si4451DY vs. Si4467DY Description: Package: Pin Out: P-Channel, 12 V D-S MOSFET SO-8 Identical Part Number Replacements Si4451DY-T1-E3 Replaces Si4467DY-T1-E3 Si4451DY-T1 Replaces Si4467DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si4451DY Si4467DY Si4451DY-T1-E3 Si4467DY-T1-E3 Si4451DY-T1 Si4467DY-T1 31-Oct-06 74222

    Si4463DY

    Abstract: 70707
    Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4463DY 18-Jul-08 70707

    SI4464

    Abstract: Si4464DY
    Text: SPICE Device Model Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4464DY S-51095Rev. 13-Jun-05 SI4464

    Si4463BDY

    Abstract: Si4463BDY-T1-E3
    Text: New Product Si4463BDY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.011 at VGS = - 10 V - 13.7 0.014 at VGS = - 4.5 V - 12.3 0.020 at VGS = - 2.5 V - 10.3 RoHS COMPLIANT S SO-8 S 1 8 D S 2 7 D S 3 6 D 5 D


    Original     		PDF Si4463BDY Si4463BDY-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4462DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 1.50 0.510 at VGS = 6.0 V 1.45 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for fast Switching


    Original     		PDF Si4462DY 2002/95/EC Si4462DY-T1-E3 Si4462DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4464DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4464DY 0-to-10V 28-Feb-03

    7216

    Abstract: Si4462DY
    Text: SPICE Device Model Si4462DY Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4462DY 0-to-10V 24-Feb-03 7216

    Si4465DY

    Abstract: Si4465DY SPICE Device Model
    Text: SPICE Device Model Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4465DY 07-May-01 Si4465DY SPICE Device Model

    Si4466DY

    Abstract: No abstract text available
    Text: Si4466DY Vishay Siliconix N-Channel 2.5-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(ON) (W) ID (A) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V "11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4466DY S-54695--Rev. 15-Sep-97

    Untitled

    Abstract: No abstract text available
    Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.014 @ VGS = −4.5 V −13 0.020 @ VGS = −2.5 V −11 D Lead (Pb)-Free Version is RoHS Compliant Available S SO-8 S 1 8 D S 2 7 D S 3 6 D G


    Original     		PDF Si4463DY Si4463DY-T1 Si4463DY-T1--E3 S-50694--Rev. 18-Apr-05

    PF7000

    Abstract: No abstract text available
    Text: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4463DY 08-Apr-05 PF7000

    SI4463BDY

    Abstract: No abstract text available
    Text: Si4463BDY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.011 @ VGS = −10 V −13.7 0.014 @ VGS = −4.5 V −12.3 0.020 @ VGS = −2.5 V −10.3 −20 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View


    Original     		PDF Si4463BDY Si4463BDY--E3 Si4463BDY-T1--E3 08-Apr-05