Si4427BDY-T1-E3
Abstract: Si4427BDY-E3 Si4427BDY Si4427BDY-T1 Si4427DY Si4427DY-T1
Text: Specification Comparison Vishay Siliconix Si4427BDY vs. Si4427DY Description: P-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4427BDY Replaces Si4427DY Si4427BDY-E3 (Lead (Pb)-free version) Replaces Si4427DY Si4427BDY-T1 Replaces Si4427DY-T1
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Si4427BDY
Si4427DY
Si4427BDY-E3
Si4427BDY-T1
Si4427DY-T1
Si4427BDY-T1-E3
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Si4427DY
Abstract: 71488
Text: SPICE Device Model Si4427DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4427DY
13-Apr-01
71488
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Untitled
Abstract: No abstract text available
Text: Si4427DY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 FEATURES rDS(on) (W) ID (A) 0.0105 @ VGS = –10 V –13.3 0.0125 @ VGS = –4.5 V –12.2 0.0195 @ VGS = –2.5 V –9.8 D TrenchFETr Power MOSFETs S SO-8 S 1
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Si4427DY
Si4427DY-T1
08-Apr-05
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71488
Abstract: Si4427DY
Text: SPICE Device Model Si4427DY P-Channel 30-V D-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse
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Si4427DY
71488
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71308
Abstract: Si4427DY
Text: Si4427DY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 30 rDS(on) (W) ID (A) 0.0105 @ VGS = –10 V –13.3 0.0125 @ VGS = –4.5 V –12.2 0.0195 @ VGS = –2.5 V –9.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G
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Si4427DY
S-01828--Rev.
21-Aug-00
71308
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Si4427DY
Abstract: Si4427DY-T1
Text: Si4427DY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 FEATURES rDS(on) (W) ID (A) 0.0105 @ VGS = –10 V –13.3 0.0125 @ VGS = –4.5 V –12.2 0.0195 @ VGS = –2.5 V –9.8 D TrenchFETr Power MOSFETs S SO-8 S 1
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Si4427DY
Si4427DY-T1
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4427DY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.0105 @ VGS = –10 V –13.3 0.0125 @ VGS = –4.5 V –12.2 0.0195 @ VGS = –2.5 V –9.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View
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Si4427DY
S-01828--Rev.
21-Aug-00
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VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated
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Si4831DY
Si4833DY
Si4852DY
Si4816DY
10Single
VN50300L
VN50300T
OT-23
VN66AFD
VN10KLS
mosfet bs250
Si4730
SUP85N03-04P
VN66AFD
Si4835DY
si5504
SI3459DV
sup65p06
sub75p05
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