Si4360DY
Abstract: si4360
Text: SPICE Device Model Si4360DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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PDF
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Si4360DY
S-50836Rev.
16-May-05
si4360
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Si4360DY
Abstract: No abstract text available
Text: SPICE Device Model Si4360DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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PDF
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Si4360DY
0-to-10V
14-Aug-02
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Si4360DY
Abstract: No abstract text available
Text: SPICE Device Model Si4360DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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PDF
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Si4360DY
18-Jul-08
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