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    Silicon Laboratories Inc SI4300-E-BM

    IC RF AMP 900MHZ/1.8GHZ 20LGA
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    DigiKey SI4300-E-BM Tube
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    Leuze electronic GmbH + Co KG MSI 430-01 (ALTERNATE: 50132988)

    Safety Relay, Programmable, 16 in, 4 out, 4 config. IO, 24vdc, ENET IP port | Leuze MSI 430-01
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS MSI 430-01 (ALTERNATE: 50132988) Bulk 1
    • 1 $1953.64
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    SI4300 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4300 Silicon Laboratories Dual-Band Monolithic Power Amplifier System Original PDF
    SI-43002 Bel Fuse SI-43002 Scan PDF
    Si4300DY Vishay Intertechnology N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode Original PDF
    SI4300DY Vishay Siliconix MOSFETs Original PDF
    SI4300DY-TI Vishay Siliconix N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode Original PDF
    SI4300T Silicon Laboratories Tri-Band Monolithic Power Amplifier System Original PDF

    SI4300 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si4300DY

    Abstract: No abstract text available
    Text: Si4300DY New Product Vishay Siliconix N-Channel 30-V D-S , Reduced Qg Fast Switching MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.033 @ VGS = 4.5 V 7 FEATURES D TrenchFETr Power MOSFET D LITTLE FOOT Plust Integrated Schottky


    Original     		Si4300DY S-05118--Rev. 03-Dec-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4300DY New Product Vishay Siliconix N-Channel 30-V D-S , Reduced Qg Fast Switching MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.033 @ VGS = 4.5 V 7 FEATURES D TrenchFETr Power MOSFET D LITTLE FOOT Plust Integrated Schottky


    Original     		Si4300DY S-05118--Rev. 03-Dec-01 PDF

    12VBAT

    Abstract: Si4300T
    Text: Si4300T Tri-Band Monolithic Power Amplifier System Description Features The Si4300T is a complete, monolithic, high-power, and high-performance power amplifier system that integrates all functions and all components between the transmit portion of the transceiver and antenna switch module


    Original     		Si4300T 12VBAT PDF

    Si4300DY

    Abstract: Si4300DY-T1
    Text: Si4300DY Vishay Siliconix N-Channel 30-V D-S , Reduced Qg Fast Switching MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.033 @ VGS = 4.5 V 7 FEATURES D TrenchFETr Power MOSFET D LITTLE FOOT Plust Integrated Schottky


    Original     		Si4300DY Si4300DY-T1 S-03951--Rev. 26-May-03 PDF

    Si4300

    Abstract: No abstract text available
    Text: Si4300 Dual-Band Monolithic Power Amplifier System Description Features The Si4300 is a complete, monolithic, high-power, and high-performance power amplifier system that integrates all functions and all components between the transmit portion of the transceiver and antenna switch module


    Original     		Si4300 Si4300 PDF

    SI4210

    Abstract: complete circuit diagram for a PA amplifier GSM 900 module circuit diagram pa 900 amplifier GSM module circuit diagram free GSM module circuit diagram GPRS CIRCUIT DIAGRAM gsm power amp gsm 900 band pass filter gsm amplifier circuit
    Text: Si4300/4300T Power Amplifier GSM 900, DCS 1800 AND PCS 1900 MONOLITHIC POWER AMPLIFIER SYSTEM FEATURES • Small 25 mm2 3.9 x 6.4 x 1.3 mm package • Unparalleled integration – 76% less board area – 80% fewer components – Complete power control – Thermal and load mismatch protection


    Original     		Si4300/4300T Si4300-DS Si4300T-DS Si4300-EVB Si4300T-EVB 4300T Si4300 SI4210 complete circuit diagram for a PA amplifier GSM 900 module circuit diagram pa 900 amplifier GSM module circuit diagram free GSM module circuit diagram GPRS CIRCUIT DIAGRAM gsm power amp gsm 900 band pass filter gsm amplifier circuit PDF

    Si4300DY

    Abstract: Si4300DY-T1
    Text: Si4300DY Vishay Siliconix N-Channel 30-V D-S , Reduced Qg Fast Switching MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.033 @ VGS = 4.5 V 7 FEATURES D TrenchFETr Power MOSFET D LITTLE FOOT Plust Integrated Schottky


    Original     		Si4300DY Si4300DY-T1 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4300 GSM/GPRS Power Amplifier DUAL-BAND GSM 900 AND DCS 1800 MONOLITHIC POWER AMPLIFIER SYSTEM FEATURES • Small 25 mm2 3.9 x 6.4 x 1.3 mm package • Unparalleled integration – 70% less board area, and 90% fewer components – Complete power control


    Original     		Si4300 Si4300-BM Si4300-DS Si4300-EVB PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4300DY Vishay Siliconix N-Channel 30-V D-S , Reduced Qg Fast Switching MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.033 @ VGS = 4.5 V 7 FEATURES D TrenchFETr Power MOSFET D LITTLE FOOT Plust Integrated Schottky


    Original     		Si4300DY Si4300DY-T1 08-Apr-05 PDF

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds PDF

    STM9435

    Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
    Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC


    Original     		STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL STM9435 AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3400 Si3401 F U L L Y -I N T E G R A T E D 8 0 2 . 3 - C O M P L I A N T P D I N T E R F A C E AND SWITCHING REGULATOR Features IEEE 802.3 standard-compliant solutions with pre-standard PoE support Highly-integrated ICs enable compact solution footprints


    Original     		Si3400 Si3401 PDF

    EFD20 bobbin

    Abstract: TPSD10710R0100 EFD20 bobbin with 12 pin ECJ-2YB1E104K 0603 6k4 DPA424R Si4300DY TL431 core EFD20 CPHS-EFD20-1S-10P
    Text: Design Example Report Title 22W 3 Output DC/DC Converter using DPA424R Specification Input: -36 to –75VDC Output: 3.3V/3.5A, 5V/1A, -5V/-1A Application Telecom Author Power Integrations Applications Department Document Number DER-32 Date March 30, 2004 Revision


    Original     		DPA424R 75VDC DER-32 17F-3, EFD20 bobbin TPSD10710R0100 EFD20 bobbin with 12 pin ECJ-2YB1E104K 0603 6k4 DPA424R Si4300DY TL431 core EFD20 CPHS-EFD20-1S-10P PDF

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS PDF

    printed antenna dcs 1800

    Abstract: AERO4300XC Si4300 Si4300T
    Text: NXP Aero GSM/GPRS power amplifier AERO4300XC* for dualand tri-band applications Industry’s smallest, high-performance PA for GSM cellular applications This compact, highly integrated GSM power amplifier, available in dual- and tri-band versions, is the first to integrate all the PA functions into a single monolithic IC, and the first to be


    Original     		AERO4300XC* AERO4300XC printed antenna dcs 1800 Si4300 Si4300T PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3400 F U L L Y -I N T E G R A T E D 8 0 2 . 3 A F -C O M P L I A N T P D I N T E R F A C E AND SWITCHING REGULATOR Features IEEE 802.3af standard-compliant solution with pre-standard PoE support Highly-integrated IC enables compact solution footprint Minimal external components


    Original     		Si3400 20-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3400 F U L L Y -I N T E G R A T E D 8 0 2 . 3 A F -C O M P L I A N T P D I N T E R F A C E AND SWITCHING REGULATOR Features Highly-integrated IC enables compact solution footprint Minimal external components Integrated diode bridges and transient surge suppressor


    Original     		Si3400 PDF

    si4905

    Abstract: No abstract text available
    Text: Si4905 AeroFONE GSM/GPRS Single-Chip Terminal Description The AeroFONE Si4905, the first fully functional and completely integrated single-chip phone, is a breakthrough innovation generations ahead of any current product offering. This is due to its superior integration, software


    Original     		Si4905 Si4905, Si4905 CP2102) Si4701) PDF

    sud*50n025-06p

    Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
    Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m


    Original     		VSA-SG0019-0310 sud*50n025-06p SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110 PDF

    GPRS CIRCUIT DIAGRAM

    Abstract: gsm modem block diagram si4905 sim gsm modem circuit diagram circuit diagram GSM transmitter receiver silicon labs aero 32 ks xtal GSM Transceiver chip GSM circuit diagram Si4701
    Text: Si4905 AeroFONE GSM/GPRS Single-Chip Terminal Description The AeroFONE Si4905, the first fully functional and completely integrated single-chip phone, is a breakthrough innovation generations ahead of any current product offering. This is due to its superior integration, software


    Original     		Si4905 Si4905, Si4905 Si4946) Si4701) GPRS CIRCUIT DIAGRAM gsm modem block diagram sim gsm modem circuit diagram circuit diagram GSM transmitter receiver silicon labs aero 32 ks xtal GSM Transceiver chip GSM circuit diagram Si4701 PDF

    gsm signal amplifier circuit diagram

    Abstract: sim gsm modem circuit diagram gsm modem block diagram circuit diagram transceiver signal gsm gsm Handset Circuit Diagram si4901 circuit diagram GSM transmitter receiver gsm modem circuit diagram CIRCUIT DIAGRAM FOR gsm modem Si4701
    Text: Si4901 AeroFONE Si4901 GSM/SMS Single-Chip Terminal Description - SAIC support enables increased network capacity - Completely integrated RF transceiver - Dual-band RX and TX 850 or 900/1800 or 1900 - Proven, industry-leading Aero II technology - Best-in-class performance


    Original     		Si4901 Si4901 CP2102) Si4701) gsm signal amplifier circuit diagram sim gsm modem circuit diagram gsm modem block diagram circuit diagram transceiver signal gsm gsm Handset Circuit Diagram circuit diagram GSM transmitter receiver gsm modem circuit diagram CIRCUIT DIAGRAM FOR gsm modem Si4701 PDF

    TR 7512

    Abstract: No abstract text available
    Text: lOOOpFj 4 K V NDTES 1,0 PINS WITHOUT ELECTR IC AL CONNECTION ARE OMITTED, ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO : P 6 - P 5 - P 3 (P 2 -P 4 -P 1 ) : (J 6 -J 3 ) : (J 2 -J 1 ) 2 .0 INDUCTANCE : 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE:


    OCR Scan     		200uH 10KHz 10OuH 10KHz TR 7512 PDF