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    4405 mosfet

    Abstract: M 62412 4405 4717 AN609
    Text: Si4188DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		Si4188DY AN609, 15-Sep-08 4405 mosfet M 62412 4405 4717 AN609 PDF

    Si4188DY

    Abstract: si4188
    Text: SPICE Device Model Si4188DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		Si4188DY 18-Jul-08 si4188 PDF