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    SI3483 Price and Stock

    Vishay Siliconix

    Vishay Siliconix SI3483CDV-T1-GE3

    MOSFET P-CH 30V 8A 6TSOP
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    DigiKey SI3483CDV-T1-GE3 Digi-Reel 79,860 1
    • 1 $0.87
    • 10 $0.686
    • 100 $0.5061
    • 1000 $0.43996
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    SI3483CDV-T1-GE3 Cut Tape 79,860 1
    • 1 $0.87
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    • 1000 $0.43996
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    SI3483CDV-T1-GE3 Reel 75,000 3,000
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    • 10000 $0.3625
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    New Advantage Corporation SI3483CDV-T1-GE3 117,000 1
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    • 10000 $0.1957
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    Vishay Siliconix SI3483DDV-T1-GE3

    MOSFET P-CH 30V 6.4A/8A 6TSOP
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    DigiKey SI3483DDV-T1-GE3 Cut Tape 10,267 1
    • 1 $0.68
    • 10 $0.496
    • 100 $0.3261
    • 1000 $0.22442
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    SI3483DDV-T1-GE3 Digi-Reel 10,267 1
    • 1 $0.68
    • 10 $0.496
    • 100 $0.3261
    • 1000 $0.22442
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    SI3483DDV-T1-GE3 Reel 9,000 3,000
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    Vishay Siliconix SI3483DDV-T1-BE3

    P-CHANNEL 30-V (D-S) MOSFET
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    DigiKey SI3483DDV-T1-BE3 Digi-Reel 9,742 1
    • 1 $0.65
    • 10 $0.452
    • 100 $0.3076
    • 1000 $0.21735
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    SI3483DDV-T1-BE3 Cut Tape 9,742 1
    • 1 $0.65
    • 10 $0.452
    • 100 $0.3076
    • 1000 $0.21735
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    SI3483DDV-T1-BE3 Reel 6,000 3,000
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    Vishay Siliconix SI3483CDV-T1-E3

    MOSFET P-CH 30V 8A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3483CDV-T1-E3 Cut Tape 4,598 1
    • 1 $1.27
    • 10 $0.853
    • 100 $0.6441
    • 1000 $0.44625
    • 10000 $0.44625
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    SI3483CDV-T1-E3 Digi-Reel 4,598 1
    • 1 $1.27
    • 10 $0.853
    • 100 $0.6441
    • 1000 $0.44625
    • 10000 $0.44625
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    SI3483CDV-T1-E3 Reel 3,000 3,000
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    Vishay Siliconix SI3483CDV-T1-BE3

    P-CHANNEL 30-V (D-S) MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3483CDV-T1-BE3 Cut Tape 4,404 1
    • 1 $1.27
    • 10 $0.853
    • 100 $0.6441
    • 1000 $0.44625
    • 10000 $0.44625
    		Buy Now
    SI3483CDV-T1-BE3 Digi-Reel 4,404 1
    • 1 $1.27
    • 10 $0.853
    • 100 $0.6441
    • 1000 $0.44625
    • 10000 $0.44625
    		Buy Now
    SI3483CDV-T1-BE3 Reel 3,000 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.3625
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    Find more SI3483 price and stock on Findchips.com

    SI3483 Datasheets (9)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    SI3483-A02-GM Silicon Labs Integrated Circuits (ICs) - PMIC - Power Over Ethernet (PoE) Controllers - IC POE PSE 64PORT 24QFN Original PDF
    SI3483-A02-GMR Silicon Labs Integrated Circuits (ICs) - PMIC - Power Over Ethernet (PoE) Controllers - IC POE PSE 64PORT 24QFN Original PDF
    SI3483CDV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 8A 6-TSOP Original PDF
    SI3483CDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 8A 6-TSOP Original PDF
    SI3483DDV-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 6.4A/8A 6TSOP Original PDF
    SI3483DV Vishay Siliconix MOSFETs Original PDF
    Si3483DV SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    SI3483DV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 4.7A 6-TSOP Original PDF
    SI3483DV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 4.7A 6-TSOP Original PDF

    SI3483 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    Si3483CDV

    Abstract: Si3483CDV-T1-E3
    Text: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • TrenchFET Power MOSFET Qg (Typ.) APPLICATIONS 11.5 nC RoHS COMPLIANT • Load Switch


    Original     		Si3483CDV Si3483CDV-T1-E3 08-Apr-05 PDF

    Si3483DV-T1-E3

    Abstract: Si3483DV Si3483DV-T1-GE3
    Text: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.035 at VGS = - 10 V - 6.2 0.053 at VGS = - 4.5 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		Si3483DV 2002/95/EC Si3483DV-T1-E3 Si3483DV-T1-GE3 18-Jul-08 PDF

    tsop6 package

    Abstract: No abstract text available
    Text: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si3483CDV 2002/95/EC Si3483CDV-T1-E3 Si3483CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 tsop6 package PDF

    Si3483DV

    Abstract: No abstract text available
    Text: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = −10 V −6.2 0.053 @ VGS = −4.5 V −5.0 APPLICATIONS D Load Switch TSOP-6 Top View 3 mm 1 6 2 5 3 4


    Original     		Si3483DV Si3483DV-T1--E3 08-Apr-05 PDF

    SI3483CDV

    Abstract: S8188
    Text: SPICE Device Model Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si3483CDV 18-Jul-08 S8188 PDF

    Si3483DV

    Abstract: No abstract text available
    Text: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = −10 V −6.2 0.053 @ VGS = −4.5 V −5.0 APPLICATIONS D Load Switch TSOP-6 Top View 3 mm 1 6 2 5 3 4


    Original     		Si3483DV Si3483DV-T1--E3 18-Jul-08 PDF

    Si3483DV

    Abstract: si3483dvt1e3
    Text: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = −10 V −6.2 0.053 @ VGS = −4.5 V −5.0 APPLICATIONS D Load Switch TSOP-6 Top View 3 mm 1 6 2 5 3 4


    Original     		Si3483DV Si3483DV-T1--E3 S-40238--Rev. 16-Feb-04 si3483dvt1e3 PDF

    si3483dvt1e3

    Abstract: Si3483DV Si3483DV-T1-E3 Si3483CDV Si3483CDV-T1-E3 Si3483CDV-T1-GE3
    Text: Specification Comparison Vishay Siliconix Si3483CDV vs. Si3483DV Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3483CDV-T1-E3 or Si3483CDV-T1-GE3 replaces Si3483DV-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		Si3483CDV Si3483DV Si3483CDV-T1-E3 Si3483CDV-T1-GE3 Si3483DV-T1-E3 20-Jul-09 si3483dvt1e3 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si3483CDV 2002/95/EC Si3483CDV-T1-E3 Si3483CDV-T1-GE3 11-Mar-11 PDF

    72171

    Abstract: Si3483DV
    Text: SPICE Device Model Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si3483DV 0-to-10V 26-Feb-03 72171 PDF

    SI3483CDV

    Abstract: Si3483CDV-T1-E3
    Text: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • TrenchFET Power MOSFET Qg (Typ.) APPLICATIONS 11.5 nC RoHS COMPLIANT • Load Switch


    Original     		Si3483CDV Si3483CDV-T1-E3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.035 at VGS = - 10 V - 6.2 0.053 at VGS = - 4.5 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		Si3483DV 2002/95/EC Si3483DV-T1-E3 Si3483DV-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.035 at VGS = - 10 V - 6.2 0.053 at VGS = - 4.5 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		Si3483DV 2002/95/EC Si3483DV-T1-E3 Si3483DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si3483CDV-T1-GE3

    Abstract: SI3483CDV Si3483CDV-T1-E3
    Text: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si3483CDV 2002/95/EC Si3483CDV-T1-E3 Si3483CDV-T1-GE3 18-Jul-08 PDF

    72171

    Abstract: Si3483DV
    Text: SPICE Device Model Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si3483DV netwo10 S-50836 16-May-05 72171 PDF

    Si3483CDV-T1-GE3

    Abstract: Si3483CDV Si3483CDV-T1-E3
    Text: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si3483CDV 2002/95/EC Si3483CDV-T1-E3 Si3483CDV-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si3483CDV 2002/95/EC Si3483CDV-T1-E3 Si3483CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si3483CDV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si3483CDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    AN609

    Abstract: Si3483DV
    Text: Si3483DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si3483DV AN609 25-Aug-05 PDF

    Si3483DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si3483DV 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.035 at VGS = - 10 V - 6.2 0.053 at VGS = - 4.5 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		Si3483DV 2002/95/EC Si3483DV-T1-E3 Si3483DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si3483CDV 2002/95/EC Si3483CDV-T1-E3 Si3483CDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si3483DV

    Abstract: No abstract text available
    Text: Si3483DV New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = -10 V -6.2 0.053 @ VGS = -4.5 V - 5.0 APPLICATIONS D Load Switch -30 TSOP-6 Top View 1 (4) S 6 (3) G


    Original     		Si3483DV S-22198--Rev. 25-Nov-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: LM3424 www.ti.com SNVS603B – AUGUST 2009 – REVISED OCTOBER 2009 LM3424 Constant Current N-Channel Controller with Thermal Foldback for Driving LEDs Check for Samples: LM3424 FEATURES DESCRIPTION • The LM3424 is a versatile high voltage N-channel MosFET controller for LED drivers . It can be easily


    Original     		LM3424 SNVS603B LM3424 LM3424Q PDF