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    SI3455 Search Results

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    SI3455 Price and Stock

    Vishay Siliconix SI3455ADV-T1-E3

    MOSFET P-CH 30V 2.7A 6TSOP
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    DigiKey SI3455ADV-T1-E3 Cut Tape
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    SI3455ADV-T1-E3 Digi-Reel 1
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    SI3455ADV-T1-E3 Reel
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    RS SI3455ADV-T1-E3 Bulk 3,000
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    Vishay Siliconix SI3455ADV-T1-GE3

    MOSFET P-CH 30V 2.7A 6TSOP
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    Vishay Siliconix SI3455DV-T1

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    Bristol Electronics SI3455DV-T1 330
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    Fairchild Semiconductor Corporation SI3455DV

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    Bristol Electronics SI3455DV 91
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    Quest Components SI3455DV 64
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    Rochester Electronics SI3455DV 158 1
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    Vishay Siliconix SI3455DVT1

    P-CHANNEL 30-V (D-S) MOSFET Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SI3455DVT1 45,000
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    Find more SI3455 price and stock on Findchips.com

    SI3455 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si3455ADV Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    Si3455ADV Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    Si3455ADV SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    SI3455ADV-T1 Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    SI3455ADV-T1 Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    SI3455ADV-T1-E3 Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    SI3455ADV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 2.7A 6-TSOP Original PDF
    SI3455ADV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 2.7A 6TSOP Original PDF
    SI3455DV Fairchild Semiconductor Single P-Channel Logic Level PowerTrench MOSFET Original PDF
    Si3455DV Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si3455DV Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    SI3455DV Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    SI3455DV Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    Si3455DV SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    SI3455DV-T1 Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF

    SI3455 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		PDF Si3455DV

    Si3441DV

    Abstract: TSOP6
    Text: TSOP-6 The Next Step for LITTLE FOOTR Selector Guide Maximum Ratings rDS on (W) Part Number VDS (V) VGS = 10 V VGS = 4.5 V Si3454DV/X 30 0.065 Si3455DV/X 30 0.10 Si3442DV/X 20 0.07 Si3441DV/X 20 0.10 VGS = 2.5 V ID (A) ( ) Configuration Available 0.095 "4.2


    Original     		PDF Si3454DV/X Si3455DV/X Si3442DV/X Si3441DV/X Si3441DV TSOP6

    SI3455DV-T1

    Abstract: Si3455DV
    Text: Si3455DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 30 rDS(on) (W) ID (A) 0.100 @ VGS = −10 V "3.5 0.190 @ VGS = −4.5 V "2.5 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant Available (4) S TSOP-6


    Original     		PDF Si3455DV Si3455DV-T1 Si3455DV-T1--E3 18-Jul-08

    Si3455DV

    Abstract: No abstract text available
    Text: Si3455DV P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.190 @ VGS = –4.5 V "2.5 (4) S TSOP-6 Top View 1 Power Dissipation 6 (3) G 3 mm 2 5 3 4 Si3455DV—2.0 W (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET


    Original     		PDF Si3455DV Si3455DV--2 S-49525--Rev. 06-Oct-97

    Untitled

    Abstract: No abstract text available
    Text: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.100 at VGS = - 10 V - 3.5 0.170 at VGS = - 4.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si3455ADV 2002/95/EC Si3455ADV-T1-E3 Si3455ADV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si3455DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 30 rDS(on) (W) ID (A) 0.100 @ VGS = −10 V "3.5 0.190 @ VGS = −4.5 V "2.5 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant Available (4) S TSOP-6


    Original     		PDF Si3455DV Si3455DV-T1 Si3455DV-T1--E3 S-50694--Rev. 18-Apr-05

    Si3455DV

    Abstract: No abstract text available
    Text: Si3455DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.190 @ VGS = –4.5 V "2.5 (4) S TSOP-6 Top View 1 Power Dissipation 6 (3) G 3 mm 2 5 3 4 Si3455DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET


    Original     		PDF Si3455DV Si3455DV--2 S-41818--Rev. 29-Aug

    Si3455DV

    Abstract: No abstract text available
    Text: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		PDF Si3455DV

    Si3455DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3455DV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3455DV S-50383Rev. 21-Mar-05

    Si3455ADV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3455ADV S-50383Rev. 21-Mar-05

    Si3455DV

    Abstract: No abstract text available
    Text: Si3455DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.190 @ VGS = –4.5 V "2.5 (4) S TSOP-6 Top View 1 Power Dissipation 6 (3) G 3 mm 2 5 3 4 Si3455DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET


    Original     		PDF Si3455DV Si3455DV--2 S-41818--Rev. 29-Aug

    Untitled

    Abstract: No abstract text available
    Text: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.100 @ VGS = −10 V −3.5 0.170 @ VGS = −4.5 V −2.7 TSOP-6 Top View 3 mm 1 6 2 5 (4) S (3) G 3 4 2.85 mm Ordering Information: Si3455ADV-T1 Si3455ADV-T1—E3 (Lead Free)


    Original     		PDF Si3455ADV Si3455ADV-T1 Si3455ADV-T1--E3 18-Jul-08

    Si3455ADV

    Abstract: Si3455ADV-T1
    Text: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.100 @ VGS = −10 V −3.5 0.170 @ VGS = −4.5 V −2.7 TSOP-6 Top View 3 mm 1 6 2 5 (4) S (3) G 3 4 2.85 mm Ordering Information: Si3455ADV-T1 Si3455ADV-T1—E3 (Lead Free)


    Original     		PDF Si3455ADV Si3455ADV-T1 Si3455ADV-T1--E3 S-40424--Rev. 15-Mar-04

    Si3455DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3455DV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3455DV 10-Oct-01

    Untitled

    Abstract: No abstract text available
    Text: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.100 at VGS = - 10 V - 3.5 0.170 at VGS = - 4.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si3455ADV 2002/96/EC Si3455ADV-T1-E3 Si3455ADV-T1-GE3 18-Jul-08

    Si3455DV

    Abstract: No abstract text available
    Text: Si3455DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.190 @ VGS = –4.5 V "2.5 (4) S TSOP-6 Top View 1 Power Dissipation 6 (3) G 3 mm 2 5 3 4 Si3455DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET


    Original     		PDF Si3455DV Si3455DV--2 S-41818--Rev. 29-Aug

    Untitled

    Abstract: No abstract text available
    Text: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.100 at VGS = - 10 V - 3.5 0.170 at VGS = - 4.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si3455ADV 2002/95/EC Si3455ADV-T1-E3 Si3455ADV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si3455DV

    Abstract: mosfet 23 Tsop-6
    Text: Si3455DV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 RDS(ON) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.190 @ VGS = –4.5 V "2.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si3455DV S-56944--Rev. 23-Nov-98 mosfet 23 Tsop-6

    p-channel 7121

    Abstract: Supersot 6 Si3455DV SI3455DV MARKING
    Text: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		PDF Si3455DV p-channel 7121 Supersot 6 SI3455DV MARKING

    Si3455ADV

    Abstract: V53A
    Text: SPICE Device Model Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3455ADV 18-Jul-08 V53A

    4431 mosfet

    Abstract: 0795 4413 7420 AN609 Si3455ADV 73808
    Text: Si3455ADV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3455ADV AN609 01-Mar-06 4431 mosfet 0795 4413 7420 73808

    Si3455ADV

    Abstract: Si3455ADV-T1
    Text: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.100 @ VGS = −10 V −3.5 0.170 @ VGS = −4.5 V −2.7 TSOP-6 Top View 3 mm 1 6 2 5 (4) S (3) G 3 4 2.85 mm Ordering Information: Si3455ADV-T1 Si3455ADV-T1—E3 (Lead Free)


    Original     		PDF Si3455ADV Si3455ADV-T1 Si3455ADV-T1--E3 08-Apr-05

    Si3455ADV

    Abstract: No abstract text available
    Text: Si3455ADV New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.170 @ VGS = –4.5 V "2.7 –30 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET


    Original     		PDF Si3455ADV S-99350--Rev. 22-Nov-99

    Si3455ADV

    Abstract: No abstract text available
    Text: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.100 @ VGS = - 10 V - 3.5 0.170 @ VGS = - 4.5 V - 2.7 - 30 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si3455ADV S-03660--Rev. 07-Apr-03