Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si2337DS www.vishay.com Vishay Siliconix P-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
|
Original
|
PDF
|
Si2337DS
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
74139
Abstract: 74139 datasheet data sheet 74139 Si2337DS
Text: SPICE Device Model Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si2337DS
18-Jul-08
74139
74139 datasheet
data sheet 74139
|
Si2337DS
Abstract: Si2337DS-T1-E3
Text: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a RDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si2337DS
O-236
OT-23)
Si2337DS-T1-E3
Si2337DS-T1-GE3
18-Jul-08
|
SI2337DS
Abstract: SI2337DS-T1-E3 Si2337DS rev ic MARKING QG 100-ETA Si2337DS Rev. A
Text: Si2337DS New Product Vishay Siliconix P-Channel 80-V D-S MOSFET ‘ FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET ID rDS(on) (W) –80 (A)a 0.270 @ VGS = –10 V –2.2 0.303 @ VGS = –6 V –2.1 APPLICATIONS Qg (Typ) RoHS D Automotive such as
|
Original
|
PDF
|
Si2337DS
O-236
OT-23)
Si2337DS-T1
52230--Rev.
24-Oct-05
SI2337DS-T1-E3
Si2337DS rev
ic MARKING QG
100-ETA
Si2337DS Rev. A
|
74139
Abstract: data sheet 74139 74139 datasheet Si2337DS S5229 v636 si2337
Text: SPICE Device Model Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si2337DS
S-52290Rev.
31-Oct-05
74139
data sheet 74139
74139 datasheet
S5229
v636
si2337
|
Untitled
Abstract: No abstract text available
Text: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a RDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si2337DS
O-236
OT-23)
Si2337DS-T1-E3
Si2337DS-T1-GE3
11-Mar-11
|
Si2337DS-T1-E3
Abstract: Si2337DS Si2337DS Rev. A
Text: New Product Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a rDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ) • TrenchFET Power MOSFET RoHS 7 COMPLIANT TO-236 (SOT-23) S G 1
|
Original
|
PDF
|
Si2337DS
O-236
OT-23)
Si2337DS-T1-E3
08-Apr-05
Si2337DS Rev. A
|
Untitled
Abstract: No abstract text available
Text: Si2337DS www.vishay.com Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a 0.270 at VGS = -10 V -2.2 0.303 at VGS = -6 V -2.1 VDS (V) -80 Qg (TYP.) 7 • TrenchFET power MOSFET • Material categorization: for definitions of compliance please see
|
Original
|
PDF
|
Si2337DS
OT-23
O-236)
Si2337DS-T1-E3
Si2337DS-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 VDS (V) - 80 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si2337DS
O-236
OT-23)
Si2337DS-T1-E3
Si2337DS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
|
Si2337DS
Abstract: Si2337DS-T1-E3 si2337
Text: New Product Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a rDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ) • TrenchFET Power MOSFET RoHS 7 COMPLIANT TO-236 (SOT-23) S G 1
|
Original
|
PDF
|
Si2337DS
O-236
OT-23)
Si2337DS-T1-E3
18-Jul-08
si2337
|
Si2337DS
Abstract: Si2337DS-T1-E3 Si2337DS Rev. A
Text: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a RDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si2337DS
O-236
OT-23)
Si2337DS-T1-E3
Si2337DS-T1-GE3
11-Mar-11
Si2337DS Rev. A
|
si2337
Abstract: SI2337DS-T1-E3
Text: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a RDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si2337DS
O-236
OT-23)
Si2337DS-T1-E3
Si2337DS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
si2337
|
Untitled
Abstract: No abstract text available
Text: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a RDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si2337DS
O-236
OT-23)
Si2337DS-T1-E3
Si2337DS-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
C3216X7R1H105K
Abstract: DR74-680-R GRM32ER71H475KA88 Si2328DS 3519f pwm circuits using 555 555 for dc dc boost converter 246 six pin switch si2337ds C3216X7R1E475K
Text: LT3519 LED Driver with Integrated Schottky Diode FEATURES n n n n n n n n n n n n n n DESCRIPTION Up to 3000:1 True Color PWM Dimming Wide Input Voltage Range Operation from 3V to 30V Transient Protection to 40V Floating LED Current Sense from 0V to 45V
|
Original
|
PDF
|
LT3519
750mA
400kHz
LT3519)
16-Lead
LT3591
3519f
C3216X7R1H105K
DR74-680-R
GRM32ER71H475KA88
Si2328DS
3519f
pwm circuits using 555
555 for dc dc boost converter
246 six pin switch
si2337ds
C3216X7R1E475K
|
|
|
LT3519-1
Abstract: pwm generator
Text: LT3519/LT3519-1/LT3519-2 LED Driver with Integrated Schottky Diode FEATURES n n n n n n n n n n n n n n DESCRIPTION Up to 3000:1 True Color PWM Dimming Wide Input Voltage Range Operation from 3V to 30V Transient Protection to 40V Rail-to-Rail LED Current Sense from 0V to 45V
|
Original
|
PDF
|
LT3519/LT3519-1/LT3519-2
750mA
400kHz
LT3519)
LT3519-1)
LT3519-2)
16-Lead
LT3591
3519fa
LT3519-1
pwm generator
|
Untitled
Abstract: No abstract text available
Text: LT3519/LT3519-1/LT3519-2 LED Driver with Integrated Schottky Diode FEATURES n n n n n n n n n n n n n n DESCRIPTION Up to 3000:1 True Color PWM Dimming Wide Input Voltage Range Operation from 3V to 30V Transient Protection to 40V Rail-to-Rail LED Current Sense from 0V to 45V
|
Original
|
PDF
|
LT3519/LT3519-1/LT3519-2
750mA
400kHz
LT3519)
LT3519-1)
LT3519-2)
16-Lead
LT3591
3519fa
|
Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs
|
Original
|
PDF
|
Diod92
VMN-SG2127-0911
Diode SOT-23 marking 15d
SI4210
si4812b
SI-4102
SI7149DP
SiM400
si4932
si7135
SiB914
SI4477
|
