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    SI2307 Price and Stock

    Vishay Siliconix SI2307BDS-T1-E3

    MOSFET P-CH 30V 2.5A SOT23-3
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    DigiKey SI2307BDS-T1-E3 Digi-Reel 22,208 1
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    SI2307BDS-T1-E3 Cut Tape 22,208 1
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    SI2307BDS-T1-E3 Reel 18,000 3,000
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    RS SI2307BDS-T1-E3 Bulk 3,000
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    Quest Components SI2307BDS-T1-E3 200
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    New Advantage Corporation SI2307BDS-T1-E3 6,000 1
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    Vishay Siliconix SI2307CDS-T1-E3

    MOSFET P-CH 30V 3.5A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2307CDS-T1-E3 Digi-Reel 22,036 1
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    SI2307CDS-T1-E3 Cut Tape 22,036 1
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    RS SI2307CDS-T1-E3 Bulk 3,000
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    New Advantage Corporation SI2307CDS-T1-E3 12,000 1
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    Micro Commercial Components SI2307-TP

    MOSFET P-CH 30V 2.7A SOT23
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    DigiKey SI2307-TP Cut Tape 5,234 1
    • 1 $0.44
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    SI2307-TP Digi-Reel 5,234 1
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    Mouser Electronics SI2307-TP 8,033
    • 1 $0.44
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    Verical SI2307-TP 54,000 3,000
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    SI2307-TP 12,000 3,000
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    Arrow Electronics SI2307-TP 54,000 10 Weeks 3,000
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    SI2307-TP 12,000 12 Weeks 3,000
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    TME SI2307-TP 1,791 1
    • 1 $0.306
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    • 100 $0.126
    • 1000 $0.095
    • 10000 $0.0825
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    Win Source Electronics SI2307-TP 291,000
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    Vishay Siliconix SI2307CDS-T1-BE3

    MOSFET P-CH 30V 2.7A/3.5A SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2307CDS-T1-BE3 Cut Tape 4,305 1
    • 1 $0.76
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    SI2307CDS-T1-BE3 Digi-Reel 4,305 1
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    New Advantage Corporation SI2307CDS-T1-BE3 3,000 1
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    Vishay Siliconix SI2307BDS-T1-GE3

    MOSFET P-CH 30V 2.5A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2307BDS-T1-GE3 Digi-Reel 4,149 1
    • 1 $0.95
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    SI2307BDS-T1-GE3 Cut Tape 4,149 1
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    Find more SI2307 price and stock on Findchips.com

    SI2307 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2307BDS Vishay Siliconix MOSFETs Original PDF
    Si2307BDS Vishay Telefunken P-channel 30-v (d-s) Mosfet Original PDF
    SI2307BDS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 2.5A SOT23-3 Original PDF
    SI2307BDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 2.5A SOT23-3 Original PDF
    SI2307CDS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 3.5A SOT23-3 Original PDF
    SI2307CDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 3.5A SOT23-3 Original PDF
    Si2307DS Unknown Metal oxide P-channel FET, Enhancement Type Original PDF
    Si2307DS Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI2307DS Vishay TRANSISTOR, POWER MOSFET, P-CHANNEL, TRENCHFET, 30V, 3A, SI2307DS Original PDF
    Si2307DS Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    Si2307DS SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    SI2307-TP Micro Commercial Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - P-CHANNEL MOSFET, SOT-23 PACKAGE Original PDF

    SI2307 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si2307CDS

    Abstract: No abstract text available
    Text: New Product Si2307CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, b 0.088 at VGS = - 10 V - 2.7 0.138 at VGS = - 4.5 V - 2.2 VDS (V) - 30 Qg (Typ.) APPLICATIONS COMPLIANT • Load Switch for Portable Devices


    Original     		PDF Si2307CDS O-236 OT-23) Si2307CDS-T1-E3 Si2307CDS-T1-GE3 11-Mar-11

    Si2307BDS-T1-E3

    Abstract: Si2307BDS
    Text: Si2307BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.078 @ VGS = −10 V −3.2 0.130 @ VGS = −4.5 V −2.5 VDS (V) −30 30 D TrenchFETr Power MOSFET D RoHS Compliant TO-236 (SOT-23) G 1 3 S Ordering Information: Si2307BDS-T1—E3 (Lead (Pb)-Free)


    Original     		PDF Si2307BDS O-236 OT-23) Si2307BDS-T1--E3 08-Apr-05 Si2307BDS-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2307CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, b 0.088 at VGS = - 10 V - 2.7 0.138 at VGS = - 4.5 V - 2.2 VDS (V) - 30 Qg (Typ.) APPLICATIONS COMPLIANT • Load Switch for Portable Devices


    Original     		PDF Si2307CDS O-236 OT-23) Si2307CDS-T1-E3 Si2307CDS-T1-GE3 30emarks 2011/65/EU 2002/95/EC. 2002/95/EC

    AN609

    Abstract: Si2307BDS
    Text: Si2307BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si2307BDS AN609 22-Aug-05

    SI2307BDS-T1-GE3

    Abstract: Si2307BDS Si2307BDS-T1-E3
    Text: Si2307BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.078 at VGS = - 10 V - 3.2 0.130 at VGS = - 4.5 V - 2.5 VDS (V) - 30 • Halogen-free Option Available • TrenchFET Power MOSFET RoHS COMPLIANT TO-236


    Original     		PDF Si2307BDS O-236 OT-23) Si2307BDS-T1-E3 Si2307BDS-T1-GE3 18-Jul-08

    5,5v 473

    Abstract: 473 capacitor LMK325BJ106MN 473 5.5v RESISTOR 120K RESISTOR 1210 resistor 0805 MOSFET SOT-23 150K resistor datasheet capacitor 47uF
    Text: 4.5V to 5.5V INPUT 1 C1 0.47uF 2 10 V+ VL CS PGND 4 REF FB GND 5 P1 Si2307DS 140mOhm 9 L1 47uH DO1608C -473 8 640mOhm COMP R2 120k C3 0.1uF 1846-5e RWY 11/26/01 EXT MAX1846 3 R3 22k FREQ R1 150k 300kHz C2 6.8nF C4 10uF 10V CER 7 6 -5V @ 70mA D1 EP05 Q03L


    Original     		PDF Si2307DS 140mOhm DO1608C 640mOhm 1846-5e MAX1846 300kHz) LMK325BJ106MN 5,5v 473 473 capacitor LMK325BJ106MN 473 5.5v RESISTOR 120K RESISTOR 1210 resistor 0805 MOSFET SOT-23 150K resistor datasheet capacitor 47uF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2307CDS www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si2307CDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si2307BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.078 at VGS = - 10 V - 3.2 0.130 at VGS = - 4.5 V - 2.5 VDS (V) - 30 • Halogen-free Option Available • TrenchFET Power MOSFET RoHS COMPLIANT TO-236


    Original     		PDF Si2307BDS O-236 OT-23) Si2307BDS-T1-E3 Si2307BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SI2307CDS-T1-GE3

    Abstract: si2307ds-t1 Si2307DS-T1-E3 si2307cds SI2307DST1 Si2307DS To 126
    Text: Specification Comparison Vishay Siliconix Si2307CDS vs. Si2307DS Description: Package: Pin Out: Single P-Channel, MOSFET SOT-23 Identical Part Number Replacements: Si2307CDS-T1-E3 or Si2307CDS-T1-GE3 replaces Si2307DS-T1 Si2307CDS-T1-E3 or Si2307CDS-T1-GE3 replaces Si2307DS-T1-E3


    Original     		PDF Si2307CDS Si2307DS OT-23 Si2307CDS-T1-E3 Si2307CDS-T1-GE3 Si2307DS-T1 Si2307DS-T1-E3 SI2307DST1 To 126

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2307BDS Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2307BDS 0-to-10V 21-Dec-03

    7905 datasheet

    Abstract: 666060 datasheet of 7905 AN609 Si2307CDS 11689
    Text: Si2307CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si2307CDS AN609, 09-Jul-08 7905 datasheet 666060 datasheet of 7905 AN609 11689

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2307DS P-Channel 30-V D-S Rated MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si2307DS

    Untitled

    Abstract: No abstract text available
    Text: Si2307BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.078 at VGS = - 10 V - 3.2 0.130 at VGS = - 4.5 V - 2.5 VDS (V) - 30 • Halogen-free Option Available • TrenchFET Power MOSFET RoHS COMPLIANT TO-236


    Original     		PDF Si2307BDS O-236 OT-23) Si2307BDS-T1-E3 Si2307BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    A7 MARKING CODE

    Abstract: Si2307DS A7 marking
    Text: Si2307DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.080 @ VGS = –10 V –3 0.140 @ VGS = –4.5 V –2 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2307DS (A7)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLSS OTHERWISE NOTED)


    Original     		PDF Si2307DS O-236 OT-23) S-60570--Rev. 16-Nov-98 A7 MARKING CODE A7 marking

    Si2307DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2307DS Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2307DS 01-May-01

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2307CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, b 0.088 at VGS = - 10 V - 2.7 0.138 at VGS = - 4.5 V - 2.2 VDS (V) - 30 Qg (Typ.) APPLICATIONS COMPLIANT • Load Switch for Portable Devices


    Original     		PDF Si2307CDS O-236 OT-23) Si2307CDS-T1-E3 Si2307CDS-T1-GE3 11-Mar-11

    Si2307BDS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2307BDS Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2307BDS 18-Jul-08

    SI2307BDS-T1-GE3

    Abstract: Si2307BDS-T1-E3 Si2307BDS Si2307CDS
    Text: Specification Comparison Vishay Siliconix Si2307CDS vs. Si2307BDS Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2307CDS-T1-GE3 replaces Si2307BDS-T1-GE3 Si2307CDS-T1-GE3 replaces Si2307BDS-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si2307CDS Si2307BDS OT-23 Si2307CDS-T1-GE3 Si2307BDS-T1-GE3 Si2307BDS-T1-E3

    A7 MARKING CODE

    Abstract: SI2307DS A7 Marking marking code vishay SILICONIX vishay siliconix code marking
    Text: Si2307DS Vishay Siliconix P-Channel 30-V D-S MOSFET New Product PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.080 @ VGS = –10 V –3 0.140 @ VGS = –4.5 V –2 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2307DS (A7)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLSS OTHERWISE NOTED)


    Original     		PDF Si2307DS O-236 OT-23) S-60570Rev. 16-Nov-98 A7 MARKING CODE A7 Marking marking code vishay SILICONIX vishay siliconix code marking

    A7 MARKING CODE

    Abstract: Si2307DS
    Text: Si2307DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.080 @ VGS = –10 V –3 0.140 @ VGS = –4.5 V –2 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2307DS (A7)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLSS OTHERWISE NOTED)


    Original     		PDF Si2307DS O-236 OT-23) 08-Apr-05 A7 MARKING CODE

    Si2307BDS

    Abstract: Si2307BDS-T1-E3 Si2307BDS-T1-GE3
    Text: Si2307BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.078 at VGS = - 10 V - 3.2 0.130 at VGS = - 4.5 V - 2.5 VDS (V) - 30 • Halogen-free Option Available • TrenchFET Power MOSFET RoHS COMPLIANT TO-236


    Original     		PDF Si2307BDS O-236 OT-23) Si2307BDS-T1-E3 Si2307BDS-T1-GE3 11-Mar-11

    Si2307CDS

    Abstract: 07ab SI2307CDS-T1-GE3 327S
    Text: New Product Si2307CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, b 0.088 at VGS = - 10 V - 2.7 0.138 at VGS = - 4.5 V - 2.2 VDS (V) - 30 Qg (Typ.) APPLICATIONS COMPLIANT • Load Switch for Portable Devices


    Original     		PDF Si2307CDS O-236 OT-23) Si2307CDS-T1-E3 Si2307CDS-T1-GE3 18-Jul-08 07ab 327S

    sot-23 Marking 27A E

    Abstract: sot-23 Marking 27A
    Text: New Product Si2307CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, b 0.088 at VGS = - 10 V - 2.7 0.138 at VGS = - 4.5 V - 2.2 VDS (V) - 30 Qg (Typ.) APPLICATIONS COMPLIANT • Load Switch for Portable Devices


    Original     		PDF Si2307CDS O-236 OT-23) Si2307CDS-T1-E3 Si2307CDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. sot-23 Marking 27A E sot-23 Marking 27A

    Untitled

    Abstract: No abstract text available
    Text: Si2307BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.078 at VGS = - 10 V - 3.2 0.130 at VGS = - 4.5 V - 2.5 VDS (V) - 30 • Halogen-free Option Available • TrenchFET Power MOSFET RoHS COMPLIANT TO-236


    Original     		PDF Si2307BDS O-236 OT-23) Si2307BDS-T1-E3 Si2307BDS-T1-GE3 11-Mar-11