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    SI1563 Price and Stock

    Vishay Siliconix SI1563DH-T1-E3

    MOSFET N/P-CH 20V 1.13A SC70-6
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    Vishay Siliconix SI1563EDH-T1-E3

    MOSFET N/P-CH 20V 1.13A SC70-6
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    Vishay Siliconix SI1563DH-T1-GE3

    MOSFET N/P-CH 20V 1.13A SC70-6
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    Vishay Siliconix SI1563EDH-T1-GE3

    MOSFET N/P-CH 20V 1.13A SC70-6
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    Vishay Intertechnologies SI1563EDH-T1-E3

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    Bristol Electronics SI1563EDH-T1-E3 352
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    Component Electronics, Inc SI1563EDH-T1-E3 64
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    Find more SI1563 price and stock on Findchips.com

    SI1563 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI1563DH Vishay Siliconix MOSFETs Original PDF
    Si1563DH SPICE Device Model Vishay Complementary 20-V (D-S) Low Threshold MOSFET Original PDF
    SI1563DH-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 1.13A SC70-6 Original PDF
    SI1563DH-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 1.13A SC70-6 Original PDF
    Si1563EDH Vishay Intertechnology Complementary 20-V (D-S) Low-Threshold MOSFET Original PDF
    SI1563EDH Vishay Siliconix MOSFETs Original PDF
    Si1563EDH SPICE Device Model Vishay Complementary 20-V (D-S) Low Threshold MOSFET Original PDF
    SI1563EDH-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 1.13A SC70-6 Original PDF
    SI1563EDH-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 1.13A SC70-6 Original PDF

    SI1563 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si1563DH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.00 0.490 at VGS = - 4.5 V - 1.00


    Original     		PDF Si1563DH SC-70 2002/95/EC OT-363 SC-70 11-Mar-11

    Si1563EDH

    Abstract: diode 0750 SI1563EDH-T1
    Text: New Product Si1563EDH Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 rDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 0.490 at VGS = - 4.5 V


    Original     		PDF Si1563EDH OT-363 SC-70 SC-70 18-Jul-08 diode 0750 SI1563EDH-T1

    MARKING CODE EA

    Abstract: "leadframe material" DIP marking EA sot-363 dual mosfet si1563EDH-T1-E3 S12125
    Text: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1 0.490 at VGS = - 4.5 V -1


    Original     		PDF Si1563EDH SC-70 OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MARKING CODE EA "leadframe material" DIP marking EA sot-363 dual mosfet si1563EDH-T1-E3 S12125

    Si1563EDH

    Abstract: "MARKING CODE EA"
    Text: Si1563EDH New Product Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package 0.360 @ VGS = 2.5 V


    Original     		PDF Si1563EDH SC-70 OT-363 SC-70 S-03943--Rev. 21-May-01 "MARKING CODE EA"

    Untitled

    Abstract: No abstract text available
    Text: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 0.490 at VGS = - 4.5 V - 1.0


    Original     		PDF Si1563EDH SC-70 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 0.490 at VGS = - 4.5 V - 1.0


    Original     		PDF Si1563EDH SC-70 2002/95/EC OT-363 SC-70 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si1563DL New Product Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY rDS on (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package 0.360 @ VGS = 2.5 V


    Original     		PDF Si1563DL SC-70 OT-363 SC-70 S-03177--Rev. 05-Mar-01

    Si1563EDH

    Abstract: No abstract text available
    Text: SPICE Device Model Si1563EDH Vishay Siliconix Complementary 20-V D-S Low Threshold MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1563EDH 18-Jul-08

    mosfet low vgs

    Abstract: S-21483-Rev Si1563DH
    Text: Si1563DH New Product Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package D Fast Switching 0.360 @ VGS = 2.5 V


    Original     		PDF Si1563DH SC-70 OT-363 SC-70 18-Jul-08 mosfet low vgs S-21483-Rev

    AN609

    Abstract: Si1563EDH
    Text: Si1563EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1563EDH AN609 28-Mar-07

    SI1563EDH

    Abstract: MARKING CODE EA "MARKING CODE EA"
    Text: Si1563EDH New Product Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY rDS on (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package 0.360 @ VGS = 2.5 V


    Original     		PDF Si1563EDH SC-70 OT-363 SC-70 S-03177--Rev. 05-Mar-01 MARKING CODE EA "MARKING CODE EA"

    Si1563DH

    Abstract: No abstract text available
    Text: SPICE Device Model Si1563DH Vishay Siliconix Complementary 20-V D-S Low Threshold MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1563DH 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si1563DH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.00 0.490 at VGS = - 4.5 V - 1.00


    Original     		PDF Si1563DH SC-70 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si1563DH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.00 0.490 at VGS = - 4.5 V - 1.00


    Original     		PDF Si1563DH SC-70 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si1563DH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.00 0.490 at VGS = - 4.5 V - 1.00


    Original     		PDF Si1563DH SC-70 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1 0.490 at VGS = - 4.5 V -1


    Original     		PDF Si1563EDH SC-70 OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI1563EDH-T1-E3

    Abstract: Si1563EDH
    Text: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 0.490 at VGS = - 4.5 V - 1.0


    Original     		PDF Si1563EDH SC-70 2002/95/EC OT-363 SC-70 18-Jul-08 SI1563EDH-T1-E3

    SI1563DH-T1-E3

    Abstract: Si1563DH
    Text: Si1563DH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.00 0.490 at VGS = - 4.5 V - 1.00


    Original     		PDF Si1563DH SC-70 2002/95/EC OT-363 SC-70 18-Jul-08 SI1563DH-T1-E3

    MARKING CODE EA

    Abstract: mosfet low vgs marking EA sot-363 Si1563EDH
    Text: Si1563EDH New Product Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package 0.360 @ VGS = 2.5 V


    Original     		PDF Si1563EDH SC-70 OT-363 SC-70 08-Apr-05 MARKING CODE EA mosfet low vgs marking EA sot-363

    Si1563DH

    Abstract: No abstract text available
    Text: Si1563DH New Product Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package D Fast Switching 0.360 @ VGS = 2.5 V


    Original     		PDF Si1563DH SC-70 OT-363 SC-70 S-21483--Rev. 26-Aug-02

    "low threshold mosfet"

    Abstract: Si1563EDH
    Text: SPICE Device Model Si1563EDH Vishay Siliconix Complementary 20-V D-S Low Threshold MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1563EDH 14-Feb-01 "low threshold mosfet"

    AN609

    Abstract: Si1563DH
    Text: Si1563DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1563DH AN609 28-Mar-07

    Si1563EDH

    Abstract: No abstract text available
    Text: SPICE Device Model Si1563EDH Vishay Siliconix Complementary 20-V D-S Low Threshold MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1563EDH S-52393Rev. 21-Nov-05

    Si1563EDH

    Abstract: No abstract text available
    Text: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 0.490 at VGS = - 4.5 V - 1.0


    Original     		PDF Si1563EDH SC-70 2002/95/EC OT-363 SC-70 11-Mar-11