Untitled
Abstract: No abstract text available
Text: APNREG Series Rad-Hard Temperature Stable Negative Voltage Regulators Adjustable and Fixed Temperature Stable Regulators Manufactured in a Certified Class-K Facility Features • Rad-Hard to 300 krad TID note 1 • Single Event Latch-up (SEL) immune (LET>87 MeV/mg/cm2)
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O-257
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SI 1340 H
Abstract: No abstract text available
Text: APPREG Series Rad-Hard Temperature Stable Positive Voltage Regulators Adjustable and Fixed Temperature Stable Regulators Manufactured in a Certified Class-K Facility Features • Rad-Hard to 300 krad TID note 1 • Single Event Latch-up (SEL) immune (LET>87 MeV/mg/cm2)
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O-257
SI 1340 H
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RFHA1023
Abstract: SEMICONDUCTOR J598
Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation
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RFHA1023
RFHA1023
DS110630
SEMICONDUCTOR J598
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SEMICONDUCTOR J598
Abstract: rfha
Text: RFHA1023A Proposed 250W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation
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RFHA1023A
15dBm
RFHA1023A
DS110622
SEMICONDUCTOR J598
rfha
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OVS-33
Abstract: OVS-3303 OVS-3301
Text: SMD Super Bright LED OVS-33 Series 2.2 0.8 3.6 1 4 2 3 3.2 2.4 Features: • High Brightness • Standard PLCC-4 Package • Super Wide Viewing Angle 2 2.8 1.9 0.9 0.6 0.14 3 0.8 4 µ Radiation Diagram s 0° 10° 20° 30° 40° 1.0 50° 0.9 60° 0.8 70°
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OVS-33
OVS-3303
OVS-3303
OVS-3301
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c11cf
Abstract: No abstract text available
Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse
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RFHA1023
RFHA10k
DS120508
c11cf
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Untitled
Abstract: No abstract text available
Text: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology RF OUT VD Pin 2 GND BASE Supports Multiple Pulse
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RFHA1020
DS120508
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PDF
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SEMICONDUCTOR J598
Abstract: No abstract text available
Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse
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RFHA1023
RFHA1023
DS120508
SEMICONDUCTOR J598
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rfha1020
Abstract: No abstract text available
Text: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Optimized Evaluation Board Layout for 50Operation
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RFHA1020
RFHA1020
DS110719
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PDF
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ECJ2VB1H104K
Abstract: air surveillance system diagram using radar Gan hemt transistor RFMD 28F0181-1SR-10
Text: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology RF OUT VD Pin 2 GND BASE Supports Multiple Pulse
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RFHA1020
RFHA1020
DS120508
ECJ2VB1H104K
air surveillance system diagram using radar
Gan hemt transistor RFMD
28F0181-1SR-10
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PDF
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SI 1340
Abstract: CA 1340 lt1016 equivalent pin optical fiber lucent 1340FNPC LT1016 EIA-625 GR-253-CORE TA-TSY-000983 TR-NWT-000468
Text: Data Sheet January 2000 1340-Type Lightwave Receiver • CMOS TTL link-status flag output ■ Operation at 1.3 µm or 1.55 µm wavelengths ■ x13 40 622 MB Operating at 1.1 µm through 1.6 µm wavelengths and at 155 Mbits/s, 622 Mbits/s, or 1.25 Gbits/s, the versatile
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1340-Type
20-pin,
20-pin
GR-253-CORE)
DS00-098OPTO
DS99-072LWP)
SI 1340
CA 1340
lt1016 equivalent
pin optical fiber lucent
1340FNPC
LT1016
EIA-625
GR-253-CORE
TA-TSY-000983
TR-NWT-000468
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PDF
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GLAR94001
Abstract: Samsung Electro-Mechanics led Samsung Electro-Mechanics SI 1340
Text: ISSUE NO : Rev: DATE OF ISSUE : 2009. 01. 16 SPECIFICATION MODEL : SLTRGB35166N [Approved Rank : VF SS , CIE(T1, T2), IV(D1, D2, D3, D4, D5, D6, D7, D8, D9, DA, DB, DC)] FULL COLOR TOP VIEW CUSTOMER : 대표 승인원 CUSTOMER : 대표 승인원 DRAWN CHECKED
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SLTRGB35166N
24hours
SLTRGB35166N)
GLAR94001
Samsung Electro-Mechanics led
Samsung Electro-Mechanics
SI 1340
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lot date code samsung
Abstract: Samsung 925 GLAR94001 DIODE BBC bbc DIODE H Beam SI 1340
Text: ISSUE NO : 08083789 Rev: 000 DATE OF ISSUE : 2008. 06. 12 SPECIFICATION MODEL : SLTRGB35066B [Approved Rank : VF S , CIE(S1, S2), IV(AAA, AAB, AAC, ABA, ABB, ABC,BAA, BAB, BAC, BBA, BBB, BBC)] RGBW TOP VIEW CUSTOMER : CUSTOMER : DRAWN CHECKED APPROVED SAMSUNG ELECTRO-MECHANICS
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SLTRGB35066B
SLTRGB35066B)
lot date code samsung
Samsung 925
GLAR94001
DIODE BBC
bbc DIODE
H Beam
SI 1340
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t016
Abstract: ME-10 PD7003 PD1302
Text: »E IbEHTflEi 0[113535 fl | 3 T. 4;. 2J^ y. ¿ //.S S 111 MITSUBISHI {DISCRETE SCI LED s Max.Ratlng* Part Number Material m AIGaAs ME1013 ME1303 AIGaAs ME7021 ME75Z1 InGaAsP ME7022 ME7522 ME7922 . InGaAsP m ' 75 AIGaAs HE1504 ME1514 In u lt e Tc S50«C
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ME1013
ME1303
06min
PD7002
300/tm)
0100/tm)
0300/tm)
80/im)
300max
t016
ME-10
PD7003
PD1302
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PDF
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cbic-v
Abstract: NV231A01 pv-231 AO1011 ALA110 pnp 8 transistor array ax pm hf ne TRANSISTOR ba 751 BL8024
Text: Preliminary Data Sheet May 1996 m ic ro e le c tro n ic s group Lucent Technologies Bell Labs Innovations ALA110 VHF Semicustom Linear Array Features Description • High-speed CBIC process 10.2 GHz NPN, 4.3 GHz PNP The ALA110 Semicustom Linear Array is an Integrated
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ALA110
PV432AG1
PV432A
NV663A01
NV663A
005002b
00277T1
cbic-v
NV231A01
pv-231
AO1011
pnp 8 transistor array
ax pm hf ne
TRANSISTOR ba 751
BL8024
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Untitled
Abstract: No abstract text available
Text: sony. CXB1545Q-Y Dual 8 : 1 Multiplexer with D-F.F. Description The CXB1545Q-Y is an ultra high speed monolithic ECL 1C, which contains two 8: 1 multiplexers foll owed by D type flip flops. The data select S 0-S2 inputs determine which data is enabled. The selected
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CXB1545Q-Y
CXB1545Q-Y
CXB1545QY
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Untitled
Abstract: No abstract text available
Text: CXB1544Q-Y SONY. Dual 8 : 1 Multiplexer with Latch Description Pin Assignment The CXB1544Q-Y is an ultra high speed monolithic ECL 1C, which contains two 8: 1 multiplexers with transparent Latched outputs. The data select S0-S2 inputs determine which data input is enabled. When
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CXB1544Q-Y
CXB1544Q-Y
32JLEN2
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PDF
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Untitled
Abstract: No abstract text available
Text: son y. CXB1142Q Q uad 4 : 1 M ultiplexer with Latch Description Pin Assignment The CXB1142Q is an ultra high speed monolithic ECL 1C, which contains four 4: 1 multiplexers with transparent Latched outputs. The data select So, Si inputs determine which data input is enabled. When
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CXB1142Q
CXB1142Q
830ps
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PDF
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Untitled
Abstract: No abstract text available
Text: S o n y ._ CXB1545Q-Y Dual 8 : 1 Multiplexer with D-F.F. Description Pin A ssignm ent The C X B 1 5 4 5 Q -Y is an ultra high speed monolithic E C L 1C, which contains two 8 : 1 multiplexers foll owed by D type flip flops. The data select So-S 2
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CXB1545Q-Y
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cx 770
Abstract: CXB1143Q
Text: CXB1143Q/Q-Y Sony. Quad 4 : 1 Multiplexer with D-FF Description Pin Assignment The C X B 1 14 3 Q is an ultra high speed monolithic EC L 1C, which contains four 4 : 1 multiplexers foll owed by D type flip flops. The data select So, Si inputs determine which data is enabled. The selected
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CXB1143Q/Q-Y
CXB1143Q/QY
cx 770
CXB1143Q
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PDF
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8DM1
Abstract: No abstract text available
Text: sony Dual 8 : . CXB1544Q-Y 1 Multiplexer with Latch Description Pin Assignm ent The CXB1544Q-Y is an ultra high speed monolithic ECL 1C, which contains two 8: 1 multiplexers with transparent Latched outputs. The data select S 0-S2 inputs determine which data input is enabled. When
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CXB1544Q-Y
CXB1544Q-Y
321LEN2
8DM1
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PDF
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lte2
Abstract: 0261 230 154 LTE21009R LTE21015R
Text: DEVELOPMENT DATA | • T his data sheet contains advance Inform ation and specifications are subject to change w ithout notice. - bbSBT31 0 0 1 ^ 5 7 3 ■ LTE21009R LTE21015R Jl N AMER P H I L I P S / D I S C R E T E ObE D -
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LTE21009R
LTE21015R
FO-41B)
lte2
0261 230 154
LTE21009R
LTE21015R
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PDF
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ML4432
Abstract: L8611 PD2101 ML4102A ML4402A ML4102 740nm PD1002 ME1514 L9611
Text: 6 2 49 82 9 M ITSUBISHI DISCRETE SC _ 97D 13626 T? D É flb E ^ ñ e ^ D D D iahE t. 7^- * 7 - O S ' - 1 Laser Diodes_ ) Mitsubishi laser diodes are high-performance light sources that offer extremely stable single-mode oscillation with a low threshold
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L4405"
L5101A
L5401A
L6411A'
L6101A*
L6701A*
L7611*
L8611
L8701·
ME1013
ML4432
L8611
PD2101
ML4102A
ML4402A
ML4102
740nm
PD1002
ME1514
L9611
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PDF
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Untitled
Abstract: No abstract text available
Text: 10 -100 MHz Standard Hybrid Amplifier Dll“00 / Specification limit Parameters . 1 0 -1 0 0 M H z bandwidth /N n ii Q Q 7 Tem perature + 25 dB 15.0 + 0.5 +0.5/-0.5 Gain vs. temperature dB Max Gain flatness 1.0 Reverse isolation 30 30 1.6:1 1.6:1 Max 1.5:1
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H91-0
H-148
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