23PM-C108
Abstract: Pulse generator circuit 23pm c108 SI-7300A 2SC2002 equivalent 23PM SI 7300 DIODE lm d8 Heatsinks 7300A
Text: Unipolar Driver ICs SI-7300A and SI-7330A • Ratings Ta = 25°C Absolute maximum rating Supply voltage Output current (A) (V) Junction temperature (°C) Operating ambient temperature (°C) Storage temperature (°C) Type No. VCC1 VCC2 Io Tj Top Tstg SI-7300A
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SI-7300A
SI-7330A
SI-7300A
45mH/
23PM-C108
Pulse generator circuit
23pm c108
2SC2002 equivalent
23PM
SI 7300
DIODE lm d8
Heatsinks
7300A
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SI-7300A
Abstract: 23PM-C108 Pulse generator circuit SI 7300 SI-7502 TD62302P 23pm c108 2SC2002 SI-7200M SI-7230M
Text: Unipolar Driver ICs SI-7300A and SI-7330A • Ratings Ta = 25°C Absolute maximum rating Supply voltage Output current (A) (V) Junction temperature (°C) Operating ambient temperature (°C) Storage temperature (°C) Type No. VCC1 VCC2 Io Tj Top Tstg SI-7300A
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SI-7300A
SI-7330A
SI-7300A
G-746
YG6260
SC102
23PM-C108
Pulse generator circuit
SI 7300
SI-7502
TD62302P
23pm c108
2SC2002
SI-7200M
SI-7230M
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Untitled
Abstract: No abstract text available
Text: PD-93826E IRHY57130CM JANSR2N7484T3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHY57130CM 100K Rads (Si) IRHY53130CM 300K Rads (Si) IRHY54130CM 500K Rads (Si)
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PD-93826E
O-257AA)
IRHY57130CM
IRHY53130CM
IRHY54130CM
JANSR2N7484T3
MIL-PRF-19500/702
JANSF2N7484T3
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Untitled
Abstract: No abstract text available
Text: PD-93826E IRHY57130CM JANSR2N7484T3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHY57130CM 100K Rads (Si) IRHY53130CM 300K Rads (Si) IRHY54130CM 500K Rads (Si)
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PD-93826E
IRHY57130CM
JANSR2N7484T3
O-257AA)
MIL-PRF-19500/702
IRHY57130CM
IRHY53130CM
IRHY54130CM
JANSF2N7484T3
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038mh
Abstract: No abstract text available
Text: PD - 95841 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67130CM 100K Rads (Si) 0.042Ω ID 20A* IRHYB63130CM 300K Rads (Si) 0.042Ω 20A* IRHYB64130CM 600K Rads (Si)
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O-257AA)
IRHYB67130CM
IRHYB63130CM
IRHYB64130CM
IRHYB68130CM
1000K
O-257AA
90MeV/
5M-1994.
038mh
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LVDS 30 pin hirose connector LVDS
Abstract: No abstract text available
Text: Displays ANDpSi089C362-4HB 8.90” WSVGA Color p-Si TFT LCD Module The ANDpSi089C362-4HB is 1024 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT
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ANDpSi089C362-4HB
ANDpSi089C362-4HB
LVDS 30 pin hirose connector LVDS
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Untitled
Abstract: No abstract text available
Text: Displays PRELIMINARY ANDpSi089C362Z 8.90” WSVGA Color p-Si TFT LCD Module The ANDpSi089C362Z is 1024 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT
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ANDpSi089C362Z
ANDpSi089C362Z
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95818
Abstract: No abstract text available
Text: PD - 95818 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 0.13Ω 16A IRHYB64230CM 600K Rads (Si)
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O-257AA)
IRHYB67230CM
IRHYB63230CM
IRHYB64230CM
IRHYB68230CM
1000K
90MeV/
5M-1994.
O-257AA.
95818
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ANDpSi089C362S-4HB
Abstract: BHSR-02VS-1 DF19G-14S-1C DF19L-14P-1H LVDS 40 pin hirose connector LVDS k1024
Text: Displays ANDpSi089C362S-4HB 8.90” WSVGA Color p-Si TFT LCD Module The ANDpSi089C362S-4HB is 1024 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT
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ANDpSi089C362S-4HB
ANDpSi089C362S-4HB
BHSR-02VS-1
DF19G-14S-1C
DF19L-14P-1H
LVDS 40 pin hirose connector LVDS
k1024
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Untitled
Abstract: No abstract text available
Text: Displays PRELIMINARY ANDpSi089C362S 8.90” WSVGA Color p-Si TFT LCD Module The ANDpSi089C362S is 1024 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT
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ANDpSi089C362S
ANDpSi089C362S
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SD-54102-0301
Abstract: ccfl driver SM02 1.8 tft display
Text: Displays ANDpSi08C343S 8.4” SVGA Color p-Si TFT LCD Module The ANDpSi08C343S is 800 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT technology
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ANDpSi08C343S
ANDpSi08C343S
SD-54102-0301
ccfl driver
SM02
1.8 tft display
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Untitled
Abstract: No abstract text available
Text: Displays PRELIMINARY ANDpSi089C362-4HB 8.90” WSVGA Color p-Si TFT LCD Module The ANDpSi089C362-4HB is 1024 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT
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ANDpSi089C362-4HB
ANDpSi089C362-4HB
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BC337 pnp transistor datasheet
Abstract: transistor bc337 npn BC337 BC337-25 PNP transistor download datasheet NPN general purpose transistor BC337 transistor BC337-16 10D3 BC327 BC328 BC337-16
Text: BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92
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BC337-xBK
BC338-xBK
UL94V-0
BC337
BC338
25plement
BC327
BC328
BC337 pnp transistor datasheet
transistor bc337 npn
BC337
BC337-25 PNP transistor download datasheet
NPN general purpose transistor BC337
transistor BC337-16
10D3
BC328
BC337-16
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Untitled
Abstract: No abstract text available
Text: Displays PRELIMINARY ANDpSi089C362-4HB 8.90” WSVGA Color p-Si TFT LCD Module The ANDpSi089C362-4HB is 1024 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT
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ANDpSi089C362-4HB
ANDpSi089C362-4HB
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BC327 NPN transistor datasheet
Abstract: bc327 equivalent transistor bc328 bc327 10D3 BC327-16 BC327-25 BC327-40 BC328 BC328-16
Text: BC327-xBK / BC328-xBK BC327-xBK / BC328-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92
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BC327-xBK
BC328-xBK
UL94V-0
BC327
BC328
BC337
BC338
BC327-16
BC327 NPN transistor datasheet
bc327 equivalent
transistor bc328
bc327
10D3
BC327-16
BC327-25
BC327-40
BC328
BC328-16
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PN2907
Abstract: PN2907A pn2907 2n2907
Text: PN2907 / PN2907A PN2907 / PN2907A Si-Epitaxial Planar Switching Transistors Si-Epitaxie-Planar-Schalttransistoren PNP PNP Version 2006-09-12 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case Kunststoffgehäuse
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PN2907
PN2907A
PN2907A
UL94V-0
PN2907
2N2907)
2N2907A)
pn2907 2n2907
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Untitled
Abstract: No abstract text available
Text: BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92
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BC337-xBK
BC338-xBK
UL94V-0
BC337
BC338
BC327
BC328
BC337-16
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ANDpSi08C351-HB
Abstract: DF19G-30S-1C
Text: Displays ANDpSi08C351-HB-KIT 8.4” SVGA Color p-Si TFT LCD Module The ANDpSi08C351-HB-KIT is 800 x 600 Color TFT display that utilizes new poly-silicon p-Si technology to provide a brighter, thinner and lighter display with high-resolution. The p-Si TFT
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ANDpSi08C351-HB-KIT
ANDpSi08C351-HB-KIT
ANDpSi08C351-HB
DF19G-30S-1C
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MPSA42
Abstract: No abstract text available
Text: MPSA42-BK MPSA42-BK High voltage Si-epitaxial planar transistors Hochspannungs-Si-Epitaxial Planar-Transistoren NPN NPN Version 2011-04-27 Power dissipation Verlustleistung ±0.1 CBE min 12.5 4.6±0.1 4.6 625 mW Plastic case Kunststoffgehäuse TO-92 10D3
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MPSA42-BK
MPSA42-BK
UL94V-0
MPSA42
MPSA92
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MPSA42
Abstract: MPSA43 na-100 10D3 MPSA92 MPSA93
Text: MPSA42 / MPSA43 MPSA42 / MPSA43 High voltage Si-epitaxial planar transistors Hochspannungs-Si-Epitaxial Planar-Transistoren NPN NPN Version 2005-06-17 Power dissipation Verlustleistung 18 9 16 E BC 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx.
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MPSA42
MPSA43
UL94V-0
MPSA42
MPSA92,
MPSA93
MPSA43
na-100
10D3
MPSA92
MPSA93
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Untitled
Abstract: No abstract text available
Text: MPSA05 . MPSA06 MPSA05 . MPSA06 General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-07-25 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions - Maße [mm] 625 mW
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MPSA05
MPSA06
UL94V-0
MPSA55,
MPSA56
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Untitled
Abstract: No abstract text available
Text: PN2907A / 2N2907A PN2907A / 2N2907A General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2005-11-21 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions / Maße [mm] 625 mW
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PN2907A
2N2907A
UL94V-0
PN2222A
2N2222A
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MPSA44
Abstract: No abstract text available
Text: MPSA44-BK MPSA44-BK High voltage Si-epitaxial planar transistors Hochspannungs-Si-Epitaxial Planar-Transistoren NPN NPN Version 2011-07-07 Power dissipation Verlustleistung ±0.1 E BC min 12.5 4.6±0.1 4.6 625 mW Plastic case Kunststoffgehäuse TO-92 10D3
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MPSA44-BK
MPSA44-BK
UL94V-0
MPSA44
MPSA94
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2N2222A
Abstract: No abstract text available
Text: PN2222A / 2N2222A PN2222A / 2N2222A General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2005-11-28 Power dissipation Verlustleistung 18 9 16 E BC 625 mW Plastic case Kunststoffgehäuse TO-92
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PN2222A
2N2222A
UL94V-0
PN2907A
2N2907A
2N2222A
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