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    Infineon Technologies AG IRHYB63230CM

    Transistor MOSFET N-Channel 200V 16A 3-Pin TO-257AA - Bulk (Alt: IRHYB63230CM)
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    Infineon Technologies AG IRHYB63230CMSCS

    Transistor MOSFET N-Channel 200V 16A 3-Pin TO-257AA - Bulk (Alt: IRHYB63230CMSCS)
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    IRHYB63230CM Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRHYB63230CM International Rectifier Original PDF

    IRHYB63230CM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    95818

    Abstract: No abstract text available
    Text: PD - 95818 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 0.13Ω 16A IRHYB64230CM 600K Rads (Si)


    Original
    PDF O-257AA) IRHYB67230CM IRHYB63230CM IRHYB64230CM IRHYB68230CM 1000K 90MeV/ 5M-1994. O-257AA. 95818

    Untitled

    Abstract: No abstract text available
    Text: PD-95818B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides


    Original
    PDF PD-95818B O-257AA) IRHYB67230CM IRHYB63230CM 90MeV/ 5M-1994. O-257AA.

    Untitled

    Abstract: No abstract text available
    Text: PD-95818D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYB67230CM Radiation Level 100K Rads (Si) IRHYB63230CM 300K Rads (Si) RDS(on) I D 0.13Ω 16A 0.13Ω 16A International Rectifier’s R6 TM technology provides


    Original
    PDF PD-95818D O-257AA) IRHYB67230CM IRHYB63230CM 90MeV/ 5M-1994. O-257AA.

    IRHYB63230CM

    Abstract: IRHYB67230CM 8H6Y
    Text: PD-95818C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 16A 0.13Ω Low-Ohmic


    Original
    PDF PD-95818C O-257AA) IRHYB67230CM IRHYB67230CM IRHYB63230CM O-257AA 90MeV/ 8H6Y

    Untitled

    Abstract: No abstract text available
    Text: PD-95818D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYB67230CM Radiation Level 100K Rads (Si) IRHYB63230CM 300K Rads (Si) RDS(on) I D 0.13Ω 16A 0.13Ω 16A Low-Ohmic


    Original
    PDF PD-95818D O-257AA) IRHYB67230CM IRHYB63230CM 90MeV/ 5M-1994. O-257AA.

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original
    PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065