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    SHINETSU G746 ROHS Search Results

    SHINETSU G746 ROHS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650M-F-COVER Murata Manufacturing Co Ltd PQU650M Series - 3x5 Fan Cover Kit, RoHs Medical Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    DS3886AVF-G Rochester Electronics LLC DS3886 - RoHS, BTL 9 Bit Latching Transceiver Visit Rochester Electronics LLC Buy
    DS3886AVFN Rochester Electronics LLC DS3886 - RoHS, BTL 9 Bit Latching Transceiver Visit Rochester Electronics LLC Buy
    AD624BD-G Rochester Electronics LLC AD624 - Precission Instrumentation Amplifier, RoHS Visit Rochester Electronics LLC Buy

    SHINETSU G746 ROHS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    shinetsu G746 rohs

    Abstract: shinetsu G746 G746 rohs G746 shinetsu G746 H11S H46S AN-GEN-042-B shinetsu Dented
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-042-B for RoHS compliance products Date : 14th Dec. 2007 Prepared : Y.Tanaka Confirmed : T.Okawa SUBJECT: RECOMMENDATION of THERMAL COMPOUND APPLYING METHOD for RA series RoHS COMPLIANCE PRODUCTS


    Original     		AN-GEN-042-B shinetsu G746 rohs shinetsu G746 G746 rohs G746 shinetsu G746 H11S H46S AN-GEN-042-B shinetsu Dented PDF

    H11S

    Abstract: G746 shinetsu H46S G746 shinetsu G746 g-746 shinetsu G746 rohs
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-042-C Date : 14th Dec. 2007 Rev.date : 7th Jan. 2010 Prepared : Y.Tanaka Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RECOMMENDATION of THERMAL COMPOUND APPLYING


    Original     		AN-GEN-042-C H11S G746 shinetsu H46S G746 shinetsu G746 g-746 shinetsu G746 rohs PDF

    shinetsu G746

    Abstract: shinetsu G746 rohs G746 shinetsu G746 H11S G746 rohs
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-042-D Date : 14th Dec. 2007 Rev. date : 22th Jun. 2010 Rev.date : 7th Jan. 2010 Prepared : Y.Tanaka Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RECOMMENDATION of THERMAL COMPOUND APPLYING


    Original     		AN-GEN-042-D shinetsu G746 shinetsu G746 rohs G746 shinetsu G746 H11S G746 rohs PDF

    Untitled

    Abstract: No abstract text available
    Text: 600 V, TBD A, IGBT FGD633 Preliminary Features Package  Low Saturation Voltage  High Speed Switching  With Integrated Low VF Fast Recovery Diode  RoHS Compliant TO-3PF-3L  VCE - 600 V  IC-TBD A TC = 100 °C


    Original     		FGD633 FGD633-DS PDF

    Untitled

    Abstract: No abstract text available
    Text: 600 V, 20 A, IGBT MGT622 Preliminary Features Package  Low Saturation Voltage  High Speed Switching  RoHS Compliant TO-3P-3L 4 C  VCE - 600 V  IC-20 A (TC = 100 °C)


    Original     		MGT622 MGT622-DS PDF

    Untitled

    Abstract: No abstract text available
    Text: 600 V, 37 A, IGBT MGT633 Preliminary Features Package  Low Saturation Voltage  High Speed Switching  RoHS Compliant TO-247-3L 4 C  VCE - 600 V  IC-37 A (TC = 100 °C)


    Original     		MGT633 O-247-3L MGT633-DS PDF

    Untitled

    Abstract: No abstract text available
    Text: 600 V, 20 A, IGBT MGT632 Preliminary Features Package  Low Saturation Voltage  High Speed Switching  RoHS Compliant TO-247-3L 4 C  VCE - 600 V  IC-20 A (TC = 100 °C)


    Original     		MGT632 O-247-3L MGT632-DS PDF

    Untitled

    Abstract: No abstract text available
    Text: 600 V, 20 A, IGBT MGD632 Preliminary Features Package  Low Saturation Voltage  High Speed Switching  With Integrated Low VF Fast Recovery Diode  RoHS Compliant TO-247-3L 4 C  VCE - 600 V


    Original     		MGD632 O-247-3L MGD632-DS PDF

    mgd622

    Abstract: No abstract text available
    Text: 600 V, 20 A, IGBT MGD622 Preliminary Features Package  Low Saturation Voltage  High Speed Switching  With Integrated Low VF Fast Recovery Diode  RoHS Compliant TO-3P-3L 4 C  VCE - 600 V


    Original     		MGD622 MGD622-DS mgd622 PDF

    MGD633

    Abstract: No abstract text available
    Text: 600 V, 37 A, IGBT MGD633 Preliminary Features Package  Low Saturation Voltage  High Speed Switching  With Integrated Low VF Fast Recovery Diode  RoHS Compliant TO-247-3L 4 C  VCE - 600 V


    Original     		MGD633 O-247-3L MGD633-DS MGD633 PDF

    STR-W6750

    Abstract: STR-W6756 strw6756 Application Note 28103.30 strw6750 data sheet str w6756 STR W6750 str w6756 str w6750 f w6756
    Text: STR-W6756 Data Sheet 28103.33* ih ng rs tc lato i Sw egu R Universal-Input/140 W Off-Line QuasiResonant Flyback Switching Regulator ABSOLUTE MAXIMUM RATINGS at TA = +25°C Control Supply Voltage, VCC . . . . 35 V Drain-Source Voltage, VDSS . . . . . . 650 V


    Original     		STR-W6756 Universal-Input/140 EI16EI SC102, YG6260, STR-W6750 STR-W6756 strw6756 Application Note 28103.30 strw6750 data sheet str w6756 STR W6750 str w6756 str w6750 f w6756 PDF

    STR-W6753 circuit diagram

    Abstract: STR-W6750 STR-W6753 circuit STR-W6753 STR-W6754 circuit diagram strw6750 STR-W6756 STRW6753 STR-W6754 STR-W6753 diagram
    Text: STR-W6753 Data Sheet 28103.31 ih ng rs tc lato i Sw egu R Universal-Input/58 W Off-Line QuasiResonant Flyback Switching Regulator ABSOLUTE MAXIMUM RATINGS at TA = +25°C Control Supply Voltage, VCC . . . . 35 V Drain-Source Voltage, VDSS . . . . . . 650 V


    Original     		STR-W6753 Universal-Input/58 STR-W6753 SC102, YG6260, STR-W6753 circuit diagram STR-W6750 STR-W6753 circuit STR-W6754 circuit diagram strw6750 STR-W6756 STRW6753 STR-W6754 STR-W6753 diagram PDF

    STR-W6754 circuit diagram

    Abstract: str-w6754 STR-W6750 STRW6754 STR-W6756 Application Note 28103.30 str w6750 data sheet str w6756 str W6754 STR-W6754 circuit diagram detail
    Text: STR-W6754 Data Sheet 28103.32 ih ng rs tc lato i Sw egu R Universal-Input/100 W Off-Line QuasiResonant Flyback Switching Regulator ABSOLUTE MAXIMUM RATINGS at TA = +25°C Control Supply Voltage, VCC . . . . 35 V Drain-Source Voltage, VDSS . . . . . . 650 V


    Original     		STR-W6754 Universal-Input/100 SC102, YG6260, STR-W6754 circuit diagram str-w6754 STR-W6750 STRW6754 STR-W6756 Application Note 28103.30 str w6750 data sheet str w6756 str W6754 STR-W6754 circuit diagram detail PDF

    STR-W6756

    Abstract: STR-W6750 strw6756 strw6750 STRw-6756 Application Note 28103.30 28103.30 str.w6756 STR-W6756 circuit diagram strw6756 diagram
    Text: STR-W6756 Data Sheet 28103.33 ih ng rs tc lato i Sw egu R Universal-Input/140 W Off-Line QuasiResonant Flyback Switching Regulator ABSOLUTE MAXIMUM RATINGS at TA = +25°C Control Supply Voltage, VCC . . . . 35 V Drain-Source Voltage, VDSS . . . . . . 650 V


    Original     		STR-W6756 Universal-Input/140 STR-W6756 SC102, YG6260, STR-W6750 strw6756 strw6750 STRw-6756 Application Note 28103.30 28103.30 str.w6756 STR-W6756 circuit diagram strw6756 diagram PDF

    STR-W6753 circuit diagram

    Abstract: STR-W6756 circuit diagram
    Text: STR-W6753 Data Sheet 28103.31* ih ng rs tc lato i Sw egu R Universal-Input/58 W Off-Line QuasiResonant Flyback Switching Regulator ABSOLUTE MAXIMUM RATINGS at TA = +25°C Control Supply Voltage, VCC . . . . 35 V Drain-Source Voltage, VDSS . . . . . . 650 V


    Original     		STR-W6753 Universal-Input/58 EI16EI SC102, YG6260, STR-W6753 circuit diagram STR-W6756 circuit diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: VRM = 600 V, IF AV = 20 A, trr = 35 ns(max.) Fast Recovery Diode FMXS-1206S Features Package The FMXS-1206S is a fast recovery diode which realize a peak reverse voltage of 600V, a typical forward voltage drop of 1.4V and typical trr-time of 25ns optimizing a life-time control. It has the characteristics


    Original     		FMXS-1206S FMXS-1206S O-220F-2L FMXS-1206S-DS PDF

    mp1526

    Abstract: MN1526 "Sanken power transistor"
    Text: 260 V, 15 A Silicon NPN Epitaxial Planar Bipolar Transistor MN1526 Features Package  Adopt LAPT Structure  Kept hFE-IC Linearity “Flat” to High current  Improved Switching Characteristics  High Frequency  Exceptional Safe Operation Area


    Original     		MN1526 MP1526 MN1526-DS mp1526 MN1526 "Sanken power transistor" PDF

    Untitled

    Abstract: No abstract text available
    Text: 100 V, 34 A, 20.2 mΩ Low RDS ON N ch Trench Power MOSFET SKI10297 Features Package TO-263  V(BR)DSS - 100 V (ID = 100 µA)  ID - 34 A  RDS(ON) - 28.8 mΩ max. (VGS = 10 V, ID = 17.1 A)


    Original     		SKI10297 O-263 SKI10297-DS PDF

    Untitled

    Abstract: No abstract text available
    Text: 75 V, 46 A, 10.4 mΩ Low RDS ON N ch Trench Power MOSFET SKI07171 Features Package TO-263  V(BR)DSS - 75 V (ID = 100 µA)  ID - 46 A  RDS(ON) - 14.1 mΩ max. (VGS = 10 V, ID = 22.8 A)


    Original     		SKI07171 O-263 SKI07171-DS PDF

    Untitled

    Abstract: No abstract text available
    Text: 75 V, 85 A, 5.3 mΩ Low RDS ON N ch Trench Power MOSFET SKI07074 Features Package TO-263  V(BR)DSS - 75 V (ID = 100 µA)  ID - 85 A  RDS(ON) - 6.9 mΩ max. (VGS = 10 V, ID = 44.0 A)


    Original     		SKI07074 O-263 SKI07074-DS PDF

    Untitled

    Abstract: No abstract text available
    Text: 30 V, 80 A, 3.2 mΩ Low RDS ON N ch Trench Power MOSFET SKI03036 Features Package TO-263  V(BR)DSS - 30 V (ID = 100 µA)  ID - 80 A  RDS(ON) - 3.9 mΩ max. (VGS = 10 V, ID = 57.0 A)


    Original     		SKI03036 O-263 SKI03036-DS PDF

    Untitled

    Abstract: No abstract text available
    Text: 60 V, 57 A, 7.0 mΩ Low RDS ON N ch Trench Power MOSFET SKI06106 Features Package TO-263  V(BR)DSS - 60 V (ID = 100 µA)  ID - 57 A  RDS(ON) - 9.2 mΩ max. (VGS = 10 V, ID = 28.5 A)


    Original     		SKI06106 O-263 SKI06106-DS PDF

    Untitled

    Abstract: No abstract text available
    Text: 75 V, 62 A, 7.2 mΩ Low RDS ON N ch Trench Power MOSFET SKI07114 Features Package TO-263  V(BR)DSS - 75 V (ID = 100 µA)  ID - 62 A  RDS(ON) - 9.7 mΩ max. (VGS = 10 V, ID = 31.2 A)


    Original     		SKI07114 O-263 SKI07114-DS PDF

    Untitled

    Abstract: No abstract text available
    Text: 100 V, 66 A, 8.8 mΩ Low RDS ON N ch Trench Power MOSFET SKI10123 Features Package TO-263  V(BR)DSS - 100 V (ID = 100 µA)  ID - 66 A  RDS(ON) - 12.1 mΩ max. (VGS = 10 V, ID = 33.0 A)


    Original     		SKI10123 O-263 SKI10123-DS PDF