SHF-0589
Abstract: MCH18
Text: Preliminary Preliminary Product Description Stanford Microdevices’ SHF-0589 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added
|
Original
|
PDF
|
SHF-0589
SHF-0589
34dBm
500mA.
EDS-101242
MCH18
|
Sirenza amplifier SOT-89
Abstract: SIRENZA MARKING SPD-2226Z SHF-0589 SZP-2026Z Sirenza amplifier SOT-89 Marking SPB-2026Z
Text: Product Change Notification Date of Notification Change June 15, 2007 Part Numbers Affected Major Minor SHF-0589 Notification Product Obsolescence Product Marking Process Change Material Change Mfg Site Change Specification Change Design Change Other Not Recommended for New
|
Original
|
PDF
|
SHF-0589
SHF-0589
RecommendedPD-2226Z.
DDC-100192
DCN-101491-C)
DCN-105511
Sirenza amplifier SOT-89
SIRENZA MARKING
SPD-2226Z
SZP-2026Z
Sirenza amplifier SOT-89 Marking
SPB-2026Z
|
140C
Abstract: SHF-0589
Text: OBSOLETE Product Description Sirenza Microdevices’ SHF-0589 is a high performance AlGaAs/ GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current
|
Original
|
PDF
|
SHF-0589
SHF-0589
345mA
SHF-0x89
EDS-101242
140C
|
Untitled
Abstract: No abstract text available
Text: OBSOLETE Product Description SHF-0589 Sirenza Microdevices’ SHF-0589 is a high performance AlGaAs/ GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current
|
Original
|
PDF
|
SHF-0589
SHF-0589
345mA
SHF-0x89
EDS-101242
|
140C
Abstract: SHF-0589
Text: OBSOLETE Product Description Sirenza Microdevices’ SHF-0589 is a high performance AlGaAs/ GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current
|
Original
|
PDF
|
SHF-0589
SHF-0589
345mA
SHF-0x89
EDS-101242
140C
|
140C
Abstract: SHF-0589
Text: W E N Applications • Analog and Digital Wireless Systems • 3G, Cellular, PCS • Fixed Wireless, Pager Systems Gain 1 2 3 4 5 6 D Frequency GHz FO R Gmax Test C onditions, 25C VDS=7V, IDQ=345mA D evice C haracteristics Test Frequency U nits Min Typ Max
|
Original
|
PDF
|
345mA
IS-95
SHF-0x89
EDS-101242
140C
SHF-0589
|
SHF-0589
Abstract: SHF0589
Text: Product Description Sirenza Microdevices SHF-0589 is a high performance AlGaAs/ GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.
|
Original
|
PDF
|
SHF-0589
34dBm
500mA.
SHF-0x89
EDS-101242
SHF0589
|
Untitled
Abstract: No abstract text available
Text: i Stanford Microdevices Product Description SHF-0589 Stanford M icrodevices’ SHF-0589 series is a AI/GaAs/ GaAs Heterostructure FET housed in a low-cost surfacemount plastic package. HFET technology improves breakdown voltage for high drain voltage operation. Its
|
OCR Scan
|
PDF
|
SHF-0589
SHF-0589
33dBm
600mA.
|
FET transistors with s-parameters
Abstract: No abstract text available
Text: H S iali ford M icro d ev ices Product Description SHF-0589 Stanford M icrodevices’ SHF-0589 series is a AI/GaAs/ GaAs Heterostructure FET housed in a low-cost surfacemount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its
|
OCR Scan
|
PDF
|
SHF-0589
33dBm
600mA.
SHF-0589
118E3J0QI
10BEL19I
FET transistors with s-parameters
|