DIODES Inc DO201 date code marking
Abstract: DIODES Inc DO201 marking 856S PFR 850S - 856S
Text: FZZ SGS-THOMSON *7Æ, IMIO IlLiÊTris]©IS!ID©i PFR 850S -» 856S FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHEET • LOW FORWARD VOLTAGE DROP ■ HIGH SURGE CURRENT CAPABILITY APPLICATIONS ■ AC-DC POWER SUPPLIES AND CONVER TERS ■ FREE WHEELING DIODES, etc.
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in5341B
Abstract: C 5388 IN5333B in5359b IN5340B in5359 IN5333 IN5341 in-5359-b 5377B
Text: SGS-THOMSON I0 8S I N 5333 B -> 1 N 5388 B ZENER DIODES • VOLTAGE RANGE : 3,3V TO 200V ■ HERMETICALLY SEALED PLASTIC CASE ■ HIGH SURGE CAPABILITY {up to 180W @ 8.3ms DESCRIPTIO N 5W silicon Zener diodes. ABSOLUTE RATINGS (limiting values) Symbol Parameter
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BAT 127
Abstract: No abstract text available
Text: r=Z SGS-THOMSON ^ 7 # . MD gœiLI W iD(gi BAT 42 BAT 43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such aselectrostaticdischarges.
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON QUAD COMPARATOR INTERFACE CIRCUIT > MINIMUM HYSTERESIS VOLTAGE AT EACH INPUT: 0.3V . OUTPUT CURRENT : 15 mA . LARGE SUPPLY VOLTAGE RANGE : + 10V to + 35V • INTERNAL THERMAL PROTECTION . INPUT AND OUTPUT CLAMPING PROTEC TION DIODES. DESCRIPTION
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ESM1602Bis
ESM1602B
receiver280
ESM1602B
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Untitled
Abstract: No abstract text available
Text: STPR810D/F STPR820D/F ¿ = 7 SGS-THOMSON * 7 # . RülDSBOilLiiSTISiOlMO ULTRA FAST RECOVERY RECTIFIER DIODES . SUITED FOR SMPS . LOW LOSSES . LOW FORWARD AND REVERSE RECOVERY TIME . HIGH SURGE CURRENT CAPABILITY . HIGH AVALANCHE ENERGY CAPABIUTY DESCRIPTION
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STPR810D/F
STPR820D/F
T0220AC
ISOWATT22QAC,
ISOWATT220AC
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON TM MBAT 42 TM M BAT 43 SMALL SIGNAL SCHOTTKY DIODES D E S C R IP T IO N 3eneral purpose metal to silicon diodes featuring /ery low turn-on voltage fast switching. These devices have integrated protection against sxcessive voltage such as electrostatic discharges.
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42/TMMBAT
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minimelf marking
Abstract: No abstract text available
Text: SGS-THOMSON ^D ^@^OTO@MD gi TMMBAT 47 TMMBAT 48 SMALL SIGNAL SCHOTTKY DIODES D E S C R IP T IO N General purpose metal to silicon diodes featuring very low turn-on voltage and fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges.
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47/TM
minimelf marking
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L6221CD
Abstract: No abstract text available
Text: SGS-THOMSON L6221C ^ 7# amsiiaugCTiBMei_ L6221CN/CD QUAD DARLINGTON SWITCH • FOUR NON INVERTING INPUTS WITH ENABLE ■ OUTPUT VOLTAGE UP TO 60 V . OUTPUT CURRENT UP TO 1.8 A . VERY LOW SATURATION VOLTAGE . TTL COMPATIBLE INPUTS . INTEGRAL FAST RECIRCULATION DIODES
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L6221C
L6221CN/CD
TheL6221
L6221C-L6221CN-L6221
L6221CD
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Untitled
Abstract: No abstract text available
Text: *>71 SGS-THOMSON RfflOMHLi^irMlO © TDA4605A CONTROL CIRCUIT FOR SWITCH MODE POWER SUPPLIES USING MOS TRANSISTORS • FOLD-BACK CHARACTERISTIC PROVIDES OVERLOAD PROTECTION FOR EXTERNAL DIODES ■ BURST OPERATION UNDER SHORT-CIR CUIT AND NO LOAD CONDITIONS
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TDA4605A
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DA108S1
Abstract: No abstract text available
Text: rZ T SGS-THOMSON Ä T# DA108S1 Application Specific Discretes A.S.D. DIODE ARRAY FEATURES ♦ . ARRAY OF EIGHT DIODES • IDEAL FOR CLAMPING SIGNALS TO SUPPLY RAILS ■ SUITABLE FOR ISDN PROTECTION APPLICATIONS S08 Plastic DESCRIPTION FUNCTIONAL DIAGRAM
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DA108S1
DA108S1
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Untitled
Abstract: No abstract text available
Text: rrz SGS-THOMSON 7# ^ s a c œ i ^ C T M » _ P F R 8 5 0 856 FAST RECOVERY RECTIFIER DIODES . LOW FORWARD VOLTAGE DROP • HIGH SURGE CURRENT CAPABILITY A P P L IC A T IO N S ■ AC-DC POWER SUPPLIES AND CO NVER TERS ■ FREE W HEELING DIODES, etc.
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Untitled
Abstract: No abstract text available
Text: rz 7 ^ 7# SGS-THOMSON ^ « IL K S T T O M S B Z M 8 5 C 2 V 7 -> 1 0 0 ZENER DIODES • VOLTAGE RANGE : 2.7V TO 100V DESCRIPTION 1.3W hermetically sealed glass silicon Zener diodes. ABSOLUTE RATINGS limiting values Symbol P aram eter V alu e Unit P lo t
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5221B
Abstract: 5252 F 1107 5252 F minimelf marking B432-2
Text: SbE J> m 7 ^ 2 3 7 GG41blS T7 3 M S G T H S i SGS-THOMSON T-//-V/ I G J O T M W i TMM 5221B -> TMM 5271B S G S-THOMSON ZENER DIODES V O L T A G E R A N G E : 2 .4 V T O 100V DESCRIPTION 5 0 0 m W hermetically sealed glass silicon Zener diodes. ABSOLUTE RATINGS limiting values
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7TETE37
GG41blS
5221B
5271B
500mW
200mA)
7T2T237
5252 F 1107
5252 F
minimelf marking
B432-2
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Untitled
Abstract: No abstract text available
Text: £ÿj SGS-THOMSON noœilLlora [iïlBCi DB3 /DB4 / DC34 TRIGGER DIODES FEATURES • V bo : 3 2 V /3 4 V /4 0 V VERSIONS . LOW BREAKOVER CURRENT DESCRIPTION High reliability glass passivation insuring param eter stability and protection against junction contam ination.
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L 43 diodes
Abstract: marking 43C sot-23 da52 BAR43
Text: r z T SGS-THOMSON BAR 42 ^7# _ BAR 43, A, C, S SMALL SIGNAL SCHOTTKY DIODES #4 BAR 42/BAR 43 BAR 43 A m:fW: K1 * A2 BAR 43 C DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage and fast switching. BAR 43 S SOT 23 Plastic
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42/BAR
L 43 diodes
marking 43C sot-23
da52
BAR43
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BYT261PIV-400
Abstract: BYT260PIV-400 BYT261 ALPS 102 BYT261PIV400
Text: G ì. SGS-THOMSON BYT260PIV-400 B YT261PIV-400 m . FAST RECOVERY RECTIFIER DIODES FEATURES • . ■ ■ VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE: Insulating voltage = 2500 V rms Capacitance = 45 pF
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BYT260PIV-400
BYT261PIV-400
BYT261
ALPS 102
BYT261PIV400
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Untitled
Abstract: No abstract text available
Text: r Z Z SGS-THOMSON ^ 7 # HmemBiHCTBIBBOOIBi BYW 100-50 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES . HIGH SURGE CURRENT ■ THE SPECIFICATIONS AND CURVES EN
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON BYT 30-200-»400 I1L11 FAST RECOVERY RECTIFIER DIODES VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING SUITABLE APPLICATIO N S • FREE WHEELING DIODE IN CONVERTERS AND MOTOR CONTROL CIRCUITS ■ RECTIFIER IN S.M.P.S.
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00b02bfl
7T2RE37
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SGS-TH0M80N
Abstract: BYV255V BYV255-V BYV25
Text: /= 7 SGS-THOMSON m 7 # BYV255V HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS . VERY LOW FORWARD LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ HIGH SURGE CURRENT CAPABILITY . HIGH AVALANCHE ENERGY CAPABILITY ■ INSULATED: Insulating voltage = 2500 V rms
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BYV255V
2500Vrms
SGS-TH0M80N
BYV255-V
BYV25
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W0458
Abstract: 935AB IN937 935A
Text: f Z 7 SGS-THOMSON ^7# 1N 935,A,B 1N939,A TEMPERATURE COMPENSATED ZENER DIODES • SEMICONDUCTOR MATERIAL : SILICON . TECHNOLOGY : LOCAL EPITAXY + GUARD RING DO 35 Glass ABSOLUTE RATINGS (limiting values) P aram e ter Symbol Ptot Power Dissipation* T stg
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1N939
W0458
935AB
IN937
935A
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1240 ringer
Abstract: ls1 loud speaker LS1 buzzer T-943 LS1240
Text: r=7 SGS-THOMSON LS1240 LS1 2 4 0 A ELECTRONIC TWO - TONE RINGER • LOW CURRENT CONSUMPTION, IN ORDER TO ALLOW THE PAR ALLELOPER ATION OF 4 DEVICES . INTEGRATED RECTIFIER BRIDGE WITH ZENER DIODES TO PROTECT AGAINST OVERVOLTAGES ■ LITTLE EXTERNAL CIRCUITRY
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LS1240
LS1240and
LS1240A
LS1240.
LS1240
1240 ringer
ls1 loud speaker
LS1 buzzer
T-943
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Rectifier t2d
Abstract: t2d diodes T2D 53 BYW29 BYW29-200 BYW29F-200 ISOWATT220AC "T2D"
Text: SGS-THOMSON BYW29 F HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS . VERY LOW FORW ARD LOSSES ■ NEGLIGIBLE SW ITCHING LOSSES ■ HIGH SURGE CURR ENT CAPABILITY ■ HIGH AVALANC HE ENERGY CAPABILITY ■ INSULATED VERSION (ISOW ATT220AC)
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BYW29
ISOWATT220AC)
T0220AC
ISOWATT220AC
T0220AC
BYW29-200
ISOWATT220AC
BYW29F-200
7cJ2ci237
Rectifier t2d
t2d diodes
T2D 53
BYW29-200
BYW29F-200
"T2D"
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ZENER MIO
Abstract: DIACS DO-35 5V1
Text: rZ 7 SGS-THOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MM ôm[l(STOM(£S MEDIUM POWER THYRISTORS & TRIACS < 100 A TRIGGER DIODES (DIACS Breakover voltage Breakover voltage sym m etry Breakover current A V betw een 0 and 10 mA min. (V) Package Type m io nom m ax
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in5349b
Abstract: IN5364B IN5350B IN5349 in5364 C 5388 1N5344 1n5333
Text: SGS-THOMSON ^ « iiL iO ’iMOigS 1N 5333 B ^ 1N 5388 B ZENER DIODES • VOLTAGE RANGE : 3.3V TO 200V ■ HERMETICALLY SEALED PLASTIC CASE ■ HIGH SURGE CAPABILITY (u p to 1 8 0 W @ 8.3ms D E S C R IP T IO N 5W silicon Zener diodes. ABSOLUTE RATINGS (limiting values)
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