L9943
Abstract: transistor tda2003 CAR ALTERNATOR VOLTAGE REGULATOR l4949nd STP65N06 buz11 in motor driver circuit RB040-40T CAR ALTERNATOR hall switch ignition MOSFET IGNITION
Text: AUTOMOTIVE RECOMMENDED PRODUCTS FROM SGS-THOMSON SPECIAL FUNCTIONS Type Number L4620 L9610C/11C L9686 L9700 L9703 L9704 FUEL INJECTION Description Liquid Level Alarm PWM Powermos Controller Automotive Indicator Hex Precision Limiter Octal Ground Contact Monitoring Circuit
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L4620
L9610C/11C
L9686
L9700
L9703
L9704
L2720/2/4
TDA1151
TDA1154
TDA7275A
L9943
transistor tda2003
CAR ALTERNATOR VOLTAGE REGULATOR
l4949nd
STP65N06
buz11 in motor driver circuit
RB040-40T
CAR ALTERNATOR
hall switch ignition
MOSFET IGNITION
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smd transistor x8
Abstract: smd transistor c011 12v 3a regulator LM317 WP smd transistor M5482 L298 L297 M5480 5kw dc-dc SGSF463 BYT12PI100
Text: DATA LOGGERS RECOMMENDED PRODUCTS FROM SGS-THOMSON PRINT HEAD HAMMER DRIVE Type Function ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 High Current Darlington Drivers Medium Current Low Saturation Transistor Array BDX53 BDX54 Series BDW93 & BDW94 Series
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ULN2003A
ULN2064B
ULN2068B
ULN2074B
L702N/A
L6221AS
L9222
PBL3717A
L6201/2/3
L6204
smd transistor x8
smd transistor c011
12v 3a regulator LM317
WP smd transistor
M5482
L298 L297
M5480
5kw dc-dc
SGSF463
BYT12PI100
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PJ 1179
Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR
Text: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a
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misplaced Wire Bonds
Abstract: TOP SIDE MARKING M27C512 1562Q M27C512 SGS-THOMSON
Text: QUALITY & RELIABILITY REPORT January to December 1995 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, EPROM, OTP Memory and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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SGS M27C256
Abstract: TOP SIDE MARKING M27C512 M27C256 SGS-THOMSON mk48t08 BV 726 B m27c mk48t18 SGS M2732A Eprom 2015 static ram CP 1005
Text: QUALITY & RELIABILITY REPORT October 1996 to September 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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Untitled
Abstract: No abstract text available
Text: QUALITY & RELIABILITY REPORT April 1995 to March 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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TOP SIDE MARKING M27C512
Abstract: m27c512 equivalent 4Q96 M27128A M2716 M2732A M2764A QRR037 4Q96-1Q97 M27C256B datecode
Text: QUALITY & RELIABILITY REPORT April 1996 to March 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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QRR037/0697
TOP SIDE MARKING M27C512
m27c512 equivalent
4Q96
M27128A
M2716
M2732A
M2764A
QRR037
4Q96-1Q97
M27C256B datecode
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TOP SIDE MARKING M27C512
Abstract: No abstract text available
Text: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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M27C512 SGS-THOMSON
Abstract: M2201 ST93C46
Text: QUALITY & RELIABILITY REPORT July 1995 to June 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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M27C256B datecode
Abstract: PART MARKING M27C512 M27C256B PART MARKING m27c512 equivalent M27C256 M27C512 marking M27128A M2716 M2764A QRR038
Text: QUALITY & RELIABILITY REPORT July 1996 to June 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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EPROM AMD
Abstract: VSOP 28 NM27C256N120 TC54256AF 27c256-15 TEXAS INSTRUMENTS 28/H5GQ1H24MJR-T0C NM27C256N150 27c256-20 TEXAS INSTRUMENTS M27C256B-10C6 27C64-12L
Text: EPROM EPROM Cross Reference Guide INTRODUCTION The purpose of this document is to provide a quick way to determine which EPROM parts are mechanical and electrical equivalents to Microchip devices. There is also a listing of manufacturer's part numbering schemes to assist in determining the specifications of a
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28-lead
28-lead
32-lead
27C512A
27C512A
8x20mm
DS11178C-page
EPROM AMD
VSOP 28
NM27C256N120
TC54256AF
27c256-15 TEXAS INSTRUMENTS
28/H5GQ1H24MJR-T0C
NM27C256N150
27c256-20 TEXAS INSTRUMENTS
M27C256B-10C6
27C64-12L
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UM61256AK-15
Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE
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CP005-1E
AS7C1024-12JC
AS7C1024-12PC
AS7C1024-12TJC
AS7C1024-12TPC
AS7C1024-15JC
AS7C1024-15PC
AS7C1024-15TJC
AS7C1024-15TPC
AS7C1024-20JC
UM61256AK-15
UM61256ak sram
um61256ck-20
HY62256ALP10
XL93LC46AP
w24m257
GVT7164D32Q-6
km62256blg-7
w24m257ak-15
UM61256
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TMSC512
Abstract: NM27C64 d8763-1 eprom 27c256-20 TEXAS INSTRUMENTS AT27C256R-20PI 27C512A20 27c512a-20ip 27c512a-20 EPROM AMD ST m27c512
Text: EPROM EPROM Cross Reference Guide INTRODUCTION The purpose of this document is to provide a quick way to determine which EPROM parts are mechanical and electrical equivalents to Microchip devices. There is also a listing of manufacturer's part numbering schemes to assist in determining the specifications of a
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DS11178D-page
TC57256A
TMSC512
NM27C64
d8763-1 eprom
27c256-20 TEXAS INSTRUMENTS
AT27C256R-20PI
27C512A20
27c512a-20ip
27c512a-20
EPROM AMD
ST m27c512
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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SGS M27C512
Abstract: A15C IA10 M27C512 PDIP28 a15ck
Text: T Z SGS-THOMSON ISiilD g (s ll[Li®TrWl)!IQ(gS M27C512 512K (64K x 8) UV EPROM and OTP EPROM 1 FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100(jA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED
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M27C512
M27C512
TSOP28
tsop28
SGS M27C512
A15C
IA10
PDIP28
a15ck
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M27C512
Abstract: M27C512-20F1 m27c512-25f1 M27C512-12F1 M27C51212X 27C512 SGS-THOMSON
Text: G ì, SGS-THOMSON M27C512 512K CMOS UV EPROM - OTP ROM • VERY FAST ACCESS TIME : 100 ns. ■ COMPATIBLE WITH HIGH SPEED MICRO PROCESSORS, ZERO WAIT STATE. ■ LOW POWER "CMOS" CONSUMPTION : - Operating current 30mA - Stand by current 200|iA. ■ PROGRAMMING VOLTAGE 12.75V.
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M27C512
M27C512
32-LEAD
SOIC28-28-LEAD
M27C512-20F1
m27c512-25f1
M27C512-12F1
M27C51212X
27C512 SGS-THOMSON
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m27c512 ic pin diagram function
Abstract: ST m27c512
Text: SGS-THOMSON D M & iM M 0 g§ M27C512 CMOS 512K (64K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns * COMPATIBLE WITH HIGH SPEED MICRO PROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|xA
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M27C512
M27C512
FDIP28W
PDIP28
PLCC32
PTS028
m27c512 ic pin diagram function
ST m27c512
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Untitled
Abstract: No abstract text available
Text: w# SGS-THOMSON k7#1 IMlMilLIOTiMIKgS M27W512 512 Kbit 64Kb x 8 Low Voltage OTP EPROM • LOW VOLTAGE READ OPERATION: 2.7V to 3.6V ■ FAST ACCESS TIME: - 90ns at Vcc = 3.0V to 3.6V - 100ns at Vcc = 2.7V to 3.6V ■ LOW POWER CONSUMPTION: - Active Current 15mA
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M27W512
100ns
M27W512
TSOP28
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SGS M27C512
Abstract: M27C512 PDIP28 PLCC32
Text: F Z J SGS-THOMSON ^ 7 # M27C512 [lQ g û œ Œ (i* M O (g S CMOS 512K (64K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns « CO M PATIBLE W ITH HIGH SPEED M IC R O PROCESSORS, ZERO WAIT STATE • LOW POWER “CM O S” CONSUMPTION: - Active Current 30mA
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OCR Scan
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M27C512
M27C512
FDIP28W
PDIP28
PLCC32
PTS028
SGS M27C512
PDIP28
PLCC32
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Untitled
Abstract: No abstract text available
Text: r=J SGS-THOMSON M27V512 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM NOT FOR NEW DESIGN • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 90ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|uA ■ PROGRAMMING VOLTAGE: 12.75V
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OCR Scan
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M27V512
M27C512
M27W512
M27V512
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON 0 ® [ l[ L i© r a ® K ilQ © S M 2 7 C 5 1 2 512K 64K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 60ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS’ CONSUMPTION: - Active Current 30mA
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OCR Scan
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FDIP28W
M27C512
TSOP28
0Dbfl31t.
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON G l ¡ L iO T O M S M 2 7 C 5 1 2 512K CMOS UV EPROM - OTP ROM • VERY FAST ACCESS TIME : 100 ns. ■ COM PATIBLE WITH HIGH SPEED MICRO PROCESSORS, ZERO W AIT STATE. ■ LOW POWER "CMOS" CONSUMPTION : - Operating current 30mA - Stand by current 200|iA.
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OCR Scan
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M27C512
32-LEAD
M27C512
SOIC28-28-LEAD
S0IC28
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Untitled
Abstract: No abstract text available
Text: r = 7 SGS-1H0MS0N M27V512 * 1Ë» OKilD g[S i[Li(g,inS© iD(gi LOW VOLTAGE CMOS 512K (64K x 8 OTP ROM ABBREVIATED DATA LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (TA= 0 to 70°C) - Vcc Range: 3.2V to 5.5V (TA = -4 0 to 85°C) ACCESS TIME: 120, 150 and 200ns
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M27V512
200ns
10jaA
M27V512
M27C512
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sgs thomson
Abstract: FDIP24 M87C512 eprom rom 512k x 16 bits M27C512 SGS-THOMSON capacity of EPROM
Text: ORGANIZATION ACCESS TIME PART NUMBER PACKAGE POWER SUPPLY CONSUMPTION A C T / STANDBY 16K Bits 2K x 8 350 ns M2716 FDIP 24 24K Bits 4K x 8 200 ns 4,75 to 5,25V 1 0 0 /2 5 mA 4,5 to 5,5V 450 ns M2732A FDIP 24 4,75 to 5,25V 1 2 5 /3 5 mA 4,5 to 5,5V 250 ns 300 ns
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M27512
M27256
M27128A
M2764A
M2732A
M2716
64x16
128x8
128x16
sgs thomson
FDIP24
M87C512
eprom rom 512k x 16 bits
M27C512 SGS-THOMSON
capacity of EPROM
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