smd transistor x8
Abstract: smd transistor c011 12v 3a regulator LM317 WP smd transistor M5482 L298 L297 M5480 5kw dc-dc SGSF463 BYT12PI100
Text: DATA LOGGERS RECOMMENDED PRODUCTS FROM SGS-THOMSON PRINT HEAD HAMMER DRIVE Type Function ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 High Current Darlington Drivers Medium Current Low Saturation Transistor Array BDX53 BDX54 Series BDW93 & BDW94 Series
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ULN2003A
ULN2064B
ULN2068B
ULN2074B
L702N/A
L6221AS
L9222
PBL3717A
L6201/2/3
L6204
smd transistor x8
smd transistor c011
12v 3a regulator LM317
WP smd transistor
M5482
L298 L297
M5480
5kw dc-dc
SGSF463
BYT12PI100
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PJ 1179
Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR
Text: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a
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misplaced Wire Bonds
Abstract: TOP SIDE MARKING M27C512 1562Q M27C512 SGS-THOMSON
Text: QUALITY & RELIABILITY REPORT January to December 1995 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, EPROM, OTP Memory and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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SGS M27C256
Abstract: TOP SIDE MARKING M27C512 M27C256 SGS-THOMSON mk48t08 BV 726 B m27c mk48t18 SGS M2732A Eprom 2015 static ram CP 1005
Text: QUALITY & RELIABILITY REPORT October 1996 to September 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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Untitled
Abstract: No abstract text available
Text: QUALITY & RELIABILITY REPORT April 1995 to March 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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TOP SIDE MARKING M27C512
Abstract: m27c512 equivalent 4Q96 M27128A M2716 M2732A M2764A QRR037 4Q96-1Q97 M27C256B datecode
Text: QUALITY & RELIABILITY REPORT April 1996 to March 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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QRR037/0697
TOP SIDE MARKING M27C512
m27c512 equivalent
4Q96
M27128A
M2716
M2732A
M2764A
QRR037
4Q96-1Q97
M27C256B datecode
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TOP SIDE MARKING M27C512
Abstract: No abstract text available
Text: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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M27C512 SGS-THOMSON
Abstract: M2201 ST93C46
Text: QUALITY & RELIABILITY REPORT July 1995 to June 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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M27C256B datecode
Abstract: PART MARKING M27C512 M27C256B PART MARKING m27c512 equivalent M27C256 M27C512 marking M27128A M2716 M2764A QRR038
Text: QUALITY & RELIABILITY REPORT July 1996 to June 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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M27C1001
Abstract: No abstract text available
Text: SGS-THOMSON M27C1001 mo 1024K 128K x 8 CMOS UV EPROM - OTP ROM • JEDEC PIN OUT. ■ VERY FAST ACCESS TIME : 120 ns. ■ COMPATIBLE WITH HIGH SPEED MICRO PROCESSORS, ZERO WAIT STATE. ■ LOW POWER "CMOS" CONSUMPTION : . Active Current 35mA . Standby Current 200 (jA
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M27C1001
1024K
FDIP32-W
PDIP-32
PLCC32
M27C1001
PDIP32
1001-15XC1
27C1001-20XC1
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m27c1001
Abstract: No abstract text available
Text: /= 7 SGS-1H0MS0N M27C1001 ^TÆ . 0K0D ®@iiui®ra®iD®i CMOS 1 Megabit 128K x 8 UV EPROM and OTP ROM A B B R E VIA TE D DATA VERY FAST ACCESS TIME: 60ns COMPATIBLE with HIGH SPEED MICROPRO CESSORS, ZERO WAIT STATE LOW POWER "CMOS" CONSUMPTION: - Active Current 30mA
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M27C1001
12sec.
M27C1001
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256x16 eprom
Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Text: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1
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ET9400
EF6801/04/05
ISB12000
ISB18000
MKI48Z18
PHDIP28
MK48Z30,
256x16 eprom
GS-2I5-D12
GS-D250M
GS-2I12-9
512X8 from 128x8 ram
L293D shield
gs-2i5
PHDIP24
ESM1602B
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M27C1001
Abstract: No abstract text available
Text: Æ T SGS-THOMSON CMOS 1 Megabit 128K x 8 UV EPROM and OTP ROM > VERY FAST ACCESS TIME: 60ns > COMPATIBLE with HIGH SPEED MICROPRO CESSORS, ZERO WAIT STATE • LOW POWER "CMOS" CONSUMPTION: - Active Current 30mA - Standby Current lOO^A ■ PROGRAMMING VOLTAGE: 12.75V
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12sec.
M27C1001
FDIP32W
PDIP32
PLCC32
LCCC32W
TSOP32
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON * 7 /» [ L IO T O W O i IS M 27C 1001 1 Megabit 128K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 45ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS” CONSUMPTION: - Active Current 30mA - Standby Current lOO^A
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12sec.
M27C1001
TSOP32
7T2T237
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Abstract: No abstract text available
Text: SGS-THOMSON n»i Li TO K!ID®i M27V101 LOW VOLTAGE 1 Megabit (128K x 8 UV EPROM and OTP ROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ ACCESS TIME: 120,150 and 200ns ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 15mA - Standby Current 20|*A ■ SMALL PACKAGES for SURFACE
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M27V101
200ns
LCCC32W,
PLCC32
TSOP32
12sec.
M27V101
M27C1001
LCCC32W
PLCC32
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ST90T27
Abstract: No abstract text available
Text: SGS-THOMSON [M œ [lL iû r a M O i S T 9 0 2 7 , S T 9 0 2 8 16K ROM / 256 RAM HCMOS MCUs • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time : 500ns (12MHz internal ■ Internal Memory : ROM RAM ST9027
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500ns
12MHz
ST9027
ST9028
40-pin
ST9027
44-lead
ST9028C
56-pin
ST9028B
ST90T27
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ST6398
Abstract: HLX quartz hlx crystal QMA INVERTER setting data hlx 12Mhz crystal oscillator RG61 SGS M74HC04 sda 20560 hlx* crystal QMA INVERTER
Text: SGS-THOMSON [M œ [lL iû r a M O i S T 9 0 2 7 , S T 9 0 2 8 16K ROM / 256 RAM HCMOS MCUs • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time : 500ns (12MHz internal ■ Internal Memory : ROM RAM ST9027
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ST9027,
ST9028
500ns
12MHz
ST9027
ST9028
40-pin
ST9027
44-lead
ST9028C
ST6398
HLX quartz
hlx crystal
QMA INVERTER setting data
hlx 12Mhz crystal oscillator
RG61
SGS M74HC04
sda 20560
hlx* crystal
QMA INVERTER
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QMA INVERTER
Abstract: HLX quartz ST6398 EPROM 27256 programmer schematic ST9027 ST9028 ST90R28 SGS M74HC04 tda 835 cj CLCC44-W
Text: SGS-THOMSON [M œ [lL iû r a M O i S T 9 0 2 7 , S T 9 0 2 8 16K ROM / 256 RAM HCMOS MCUs • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time : 500ns (12MHz internal ■ Internal Memory : ROM RAM ST9027
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ST9027,
ST9028
500ns
12MHz
ST9027
ST9028
40-pin
ST9027
44-lead
ST9028C
QMA INVERTER
HLX quartz
ST6398
EPROM 27256 programmer schematic
ST90R28
SGS M74HC04
tda 835 cj
CLCC44-W
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FZJ 131
Abstract: FZJ 135
Text: FZJ SGS-1H0MS0N ^7# M27V101 OMD [Si©i!Li©'if^ Q R!lD(gI LOW VOLTAGE CMOS 1 Megabit (128K x 8) UV EPROM and OTP ROM ABBREVIATED DATA • LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (Ta = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (TA = -4 0 to 85°C)
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M27V101
200ns
LCCC32W,
PLCC32
TSOP32
12sec.
M27V101
M27C1001
FZJ 131
FZJ 135
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M27V101 LOW VOLTAGE CMOS 1 Megabit 128K x 8 UV EPROM and OTP ROM ADVANCE DATA • LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (T a = 0 to 70°C) - V cc Range: 3.2V to 5.5V (T a = - 4 0 to 85°C) ■ ACC ESS TIME: 200 and 250ns ■ LOW POWER "CMOS" CONSUMPTION:
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M27V101
250ns
LCCC32W,
PLCC32
12sec.
M27V101
27C1001
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R0014
Abstract: VR001415 7L Marking TC 4863 SGS-Thomson ST9 10 35L V6 TDA 4863 G
Text: SGS-THOMSON IM O M iL iig r a fM O O S S T 9 0 R 5 2 ROMLESS HCMOS MCU WITH BANKSWITCH AND A/D CONVERTER • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time: 375ns 16MHz internal ■ 224 general purpose registers available as RAM,
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375ns
16MHz
16Mbytes
80-pin
PQFP80
R0014
VR001415
7L Marking
TC 4863
SGS-Thomson ST9
10 35L V6
TDA 4863 G
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M27G1001
Abstract: 27C1001 27C1001 eprom M27C1001
Text: SGS-THOMSON G M2 7 C 1 0 0 1 m l 1 Megabit 128K x 8 UV EPROM and OTP E PROM FAST AC C E S S T IM E : 45ns LO W PO W ER ’’C M O S ” C O N SU M PTIO N : - A ctive C urrent 3 0m A - S tan db y C urrent lOOfi.A PR O G R A M M IN G VO LTAG E: 12.75V E LEC TR O N IC S IG N ATU R E to r AU TO M ATED
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12sec.
FDIP32W
27C1001
M27G1001
27C1001 eprom
M27C1001
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sgs thomson
Abstract: FDIP24 M87C512 eprom rom 512k x 16 bits M27C512 SGS-THOMSON capacity of EPROM
Text: ORGANIZATION ACCESS TIME PART NUMBER PACKAGE POWER SUPPLY CONSUMPTION A C T / STANDBY 16K Bits 2K x 8 350 ns M2716 FDIP 24 24K Bits 4K x 8 200 ns 4,75 to 5,25V 1 0 0 /2 5 mA 4,5 to 5,5V 450 ns M2732A FDIP 24 4,75 to 5,25V 1 2 5 /3 5 mA 4,5 to 5,5V 250 ns 300 ns
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M27512
M27256
M27128A
M2764A
M2732A
M2716
64x16
128x8
128x16
sgs thomson
FDIP24
M87C512
eprom rom 512k x 16 bits
M27C512 SGS-THOMSON
capacity of EPROM
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