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Infineon Technologies AG SGB06N60ATMA1 IGBT 600V 12A 68W TO263-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SGB06N60ATMA1	Reel			1,000	1 - 10 - 100 - 1000 $0.92768 10000 $0.92768	Buy Now
Siemens SGB06N60 12 A, 600 V, N-CHANNEL IGBT, TO-263AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SGB06N60		960			1 $2 10 $2 100 $2 1000 $0.92 10000 $0.92	Buy Now

SGB06N60 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SGB06N60		Infineon Technologies	IGBT Discretes; Package: PG-TO263-3; Switching Frequency: Fast IGBT 10-40 kHz; Package: D2PAK (TO-263); V_CE (max): 600.0 V; I_C(max)@ 25°: 12.0 A; I_C(max) @ 100°: 6.9 A		Original	PDF
SGB06N60		Infineon Technologies	Fast IGBT in NPT-Technology		Original	PDF
SGB06N60		Infineon Technologies	6A 600V TO263AB SMD IGBT		Original	PDF
SGB06N60		Siemens			Original	PDF
SGB06N60ATMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 12A 68W TO263-3		Original	PDF

SGB06N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BUP410D Abstract: SGB06N60 SGD06N60 SGP06N60 SGU06N60 Text: Preliminary data SGP06N60, SGB06N60, SGD06N60, SGU06N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:	Original	SGP06N60, SGB06N60, SGD06N60, SGU06N60 SGP06N60 O-220AB Q67041-A4709-A2 SGB06N60 O-263AB Q67041-A4709-A4 BUP410D SGB06N60 SGD06N60 SGP06N60 SGU06N60	PDF
Untitled Abstract: No abstract text available Text: SGB06N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGB06N60 P-TO-263-3-2 O-263AB) G06N60ntain	PDF
SGU06N60 Abstract: ic 0941 Q67040-S4448 Q67040-S4450 SGB06N60 SGD06N60 SGP06N60 435 M dpak Text: SGP06N60, SGD06N60, SGB06N60 SGU06N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGP06N60, SGD06N60, SGB06N60 SGU06N60 P-TO-252-3-1 O-252AA) P-TO-220-3-1 O-220AB) P-TO-251-3-1 O-251AA) SGU06N60 ic 0941 Q67040-S4448 Q67040-S4450 SGB06N60 SGD06N60 SGP06N60 435 M dpak	PDF
Untitled Abstract: No abstract text available Text: SGB06N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGB06N60 P-TO-263-3-2 O-263AB) SGB06N60	PDF
Untitled Abstract: No abstract text available Text: SGP06N60, SGB06N60 SGD06N60, SGU06N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGP06N60, SGB06N60 SGD06N60, SGU06N60 SGP06N60 SGD06N60 SGU06N60 O-220AB O-263AB	PDF
SGU06N60 Abstract: Q67041-A4709 25E-4 SGB06N60 SGD06N60 SGP06N60 Text: SGP06N60, SGB06N60 SGD06N60, SGU06N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGP06N60, SGB06N60 SGD06N60, SGU06N60 O-220AB Q67041-A4709-A2 O-263AB Q67041-A4709-A4 SGD06N60 SGU06N60 Q67041-A4709 25E-4 SGB06N60 SGD06N60 SGP06N60	PDF
G06N60 Abstract: 25E-4 PG-TO-263-3-2 PG-TO263-3-2 SGB06N60 Text: SGB06N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGB06N60 PG-TO-263-3-2 O-263AB) G06N60 G06N60 25E-4 PG-TO-263-3-2 PG-TO263-3-2 SGB06N60	PDF
DIODE 3A 600V Abstract: No abstract text available Text: SGB06N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGB06N60 P-TO-263-3-2 O-263AB) SGB06N60 DIODE 3A 600V	PDF
STR-G6551 Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision	Original	2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312	PDF
PX3544 Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly	Original	lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J	PDF
600V igbt dc to dc buck converter Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635 Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]	Original	B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635	PDF
igbt dimmer Abstract: SKW30N60HS SGP15N120 igbt 2A SKP15N60 SKW25N120 220 volt dimmer circuit SGW25N120 smps 12 volt SKW30N60 Text: P R O D U C T B R I E F Fast & H i g h S p e e d I G BT for Industrial and Consumer Applications As Single IGBT version or DuoPackTM with very soft, fast recovery anti-parallel EmConTM Diode IGBT & DuoPack TM Applications Benefits • Motor Drives ■ Easy paralleling	Original	B152-H7942-X-X-7600 igbt dimmer SKW30N60HS SGP15N120 igbt 2A SKP15N60 SKW25N120 220 volt dimmer circuit SGW25N120 smps 12 volt SKW30N60	PDF
BUZ MOSFET Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package	Original	615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D	PDF
SIPC69N60C3 Abstract: SPW20N60S5 equivalent sipc01n80c2 P-Channel Depletion Mosfets SKP15N60 BUZ78 equivalent SPNA2N80C2 BUP314 SIPC26N80C3 TDA16822 Text: File name Products Silicon Carbide Diodes thinQ 300V / 600V SDP06S60 SDP04S60 SDB10S30 SiC_Pspice.zip Smart High Side Switches High-Current PROFET BTS555 BTS550P BTS650P PROFET_Pspice.exe Smart Low Side Switches TEMPFET / Speed TEMPFET HITFET BTS114A BSP78	Original	SDP06S60 SDP04S60 SDB10S30 BTS555 BTS550P BTS650P BTS114A BSP78 BTS115A BTS134D SIPC69N60C3 SPW20N60S5 equivalent sipc01n80c2 P-Channel Depletion Mosfets SKP15N60 BUZ78 equivalent SPNA2N80C2 BUP314 SIPC26N80C3 TDA16822	PDF

Untitled Abstract: No abstract text available Text: Preliminary data SIEMENS SGP06N60, SGB06N60, SGD06N60, SGU06N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:	OCR Scan	SGP06N60, SGB06N60, SGD06N60, SGU06N60 SGP06N60 O-220AB Q67041-A4709-A2 SGB06N60 O-263AB Q67041-A4709-A4	PDF
Untitled Abstract: No abstract text available Text: Preliminary data SIEMENS SGP06N60, SGB06N60, SGD06N60, SGU06N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:	OCR Scan	SGP06N60, SGB06N60, SGD06N60, SGU06N60 SGP06N60 O-220AB Q67041-A4709-A2 SGB06N60 O-263AB Q67041-A4709-A4	PDF
BUZ MOSFET Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8	OCR Scan	615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S	PDF