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    ams OSRAM Group SFH-483-L-M-E7800

    EMITTER IR 880NM 200MA TO-18
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    SFH483 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SFH483 Siemens GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter Original PDF
    SFH483 E7800 Siemens GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter Original PDF
    SFH483E7800 Siemens GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter Original PDF
    SFH483-L Infineon Technologies GaAIAs IRED, High reliability, Matches all Si-Photodetectors, Anode is connected to the case Original PDF
    SFH483-L-M E7800 Infineon Technologies GaAIAs IRED, High reliability, Matches all Si-Photodetectors, Anode is connected to the case Original PDF
    SFH 483 L/M E7800 OSRAM Opto Semiconductors Optoelectronics - Infrared, UV, Visible Emitters - EMITTER IR 880NM 200MA TO-18 Original PDF
    SFH483-M Infineon Technologies GaAIAs IRED, High reliability, Matches all Si-Photodetectors, Anode is connected to the case Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter Lead Pb Free Product - RoHS Compliant SFH 483 L/M E7800 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Anode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit


    Original
    PDF E7800 Anwendungen2007-12-07

    Untitled

    Abstract: No abstract text available
    Text: GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter Lead Pb Free Product - RoHS Compliant SFH 483 L/M E7800 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Anode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit


    Original
    PDF E7800 Anwendungen2007-04-02

    SFH483ME7800

    Abstract: SFH483-M sfh483m E7800 LME7800
    Text: GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter Lead Pb Free Product - RoHS Compliant SFH 483 L/M E7800 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Anode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit


    Original
    PDF E7800 E7800 Q62703Q4755 SFH483ME7800 SFH483-M sfh483m LME7800

    Untitled

    Abstract: No abstract text available
    Text: GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter Lead Pb Free Product - RoHS Compliant SFH 483 L/M E7800 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Anode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit


    Original
    PDF E7800 Anwendungen2006-12-07 E7800 Q62703Q4755

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SFH483 GaAIAs INFRARED EMITTER FEATURES Maxim um Ratings • Highly Efficient GaAIAs LED O perating and Storage Tem perature Range T0P, Ts tg - 4 0 to + 80°C Jun ction Tem perature (T j). 100°C


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    PDF SFH483 E7800" 160K/W S53b3ab

    sfh462

    Abstract: No abstract text available
    Text: SFH483 SIEMENS GaAIAs INFRARED EMITTER FEATURES Maximum Ratings * Highly Efficient GaAIAs LED O p e ra tin g a n d S to ra g e T e m p e ra tu re R a n g e T0 p. T s t g - 4 0 to + 8 0 °C J u n c tio n T e m p e ra tu re ( T j) .100°C


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    PDF SFH483 BPX63, BP103, E78D0" SFH483 sfh462

    SFH 462

    Abstract: SFH483-L BPX63 SFH463 tc25c25 SFH483-LE7800 SFH483-M din 40040 humidity
    Text: SFH483 SIEMENS GaAIAs INFRARED EMITTER FEATURES Maximum Ratings • Highly Efficient GaAIAs LED Operating and Storage Temperature Range Top, Tstg . -4 0 to + 80°C Junction Temperature (Tj). 100°C


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    PDF SFH483 BPX63, BP103, E7800" 50KAN 160KyW SFH 462 SFH483-L BPX63 SFH463 tc25c25 SFH483-LE7800 SFH483-M din 40040 humidity

    Untitled

    Abstract: No abstract text available
    Text: SFH483 SIEMENS FEATURES • Highly efficient GaAIAs LED • Anode electrically connected to case • High pulse power • High reliability • DIN humidity category per DIN 40040 GOG • Matches BPX63, BP103, LD242, SFH464, photodetectors • Package - TO -18,18 A3 DIN 41870


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    PDF SFH483 BPX63, BP103, LD242, SFH464, TcS25 E7800" /lE100mA

    BP103 F

    Abstract: No abstract text available
    Text: SFH483 SIEMENS GaAIAs INFRARED EMITTER FEATURES Maxim um Ratings • Highly Efficient GaAIAs LED O p e ra tin g a n d S to ra g e T e m p e ra tu re R a n g e To p , Ts t q - 4 0 to + 80°C * Radiation in Near Infrared Range Ju n c tio n T e m p e ra tu re ( T j ) .100°C


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    PDF SFH483 BPX63, BP103, E70OO" BP103 F

    8PX43

    Abstract: SFH415T GKDb L81a SFH402-2 SFH910 SFH485 SFH462 sfh481-3 LD275
    Text: Infrared Emitters Radiant Intensity Package Outline Part Number Package TVP» Half Angle Surga Currant Features Page A SFH420 SMTTOPLED ±60" SFH421 SMTTOPLED ± 60 ° 2.5-5 too GaAs, 950 nm. On tape and reel. 7-25 4-8 100 GaAIAs, 880 nm. On tape and reel.


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    PDF SFH420 SFH421 BP104 BP103. SFH205, BP104, BP103B. LD271 LD271L LD274-1 8PX43 SFH415T GKDb L81a SFH402-2 SFH910 SFH485 SFH462 sfh481-3 LD275

    SFH4646

    Abstract: FH221 61jl
    Text: Laser Diodes Package Outline Part Number S FH2115 S FH2210 S FH 2310 S FH 2212 S FH 2213 Package Type S im ila r to T O 18 S im ila r to T O 18, 3 p in s. S im ila r lo T O 18 . S im ila r lo T O 18 Description G aAs ene rgy converter. 8 d iodes c o n n e c te d in series.


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    PDF FH2115 FH2210 SFH483501 SFH484401 4B7406 SFH4646 FH221 61jl

    Untitled

    Abstract: No abstract text available
    Text: -T-41-OS SIEMENS AKTIENGESELLSCHAF 47E • ß235b05 005b71b 0 * S I E G Introduction Laser diodes of sufficient quality with high optical output have only been on the market for a few years. A wealth of possible areas of application has lead to an upsurge in interest in


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    PDF -T--41-OS 235b05 005b71b Q62702-P 62702-P SFH4835011â

    lg 6154

    Abstract: KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64
    Text: Alphanumerische Bestellnummern Q-Nummern Alphanumeric Ordering Codes (Q numbers) Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Bestellnummer lyp


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    PDF Q60215-Y62 O60215-Y63-S1 Q60215-Y65 Q60215-Y66 Q60215-Y67 Q60215-Y111-S4 Q60215-Y111-S5 Q60215-Y1111 Q60215-Y1112 Q60215-Y1113 lg 6154 KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64

    SFH2324

    Abstract: SFH551V photodiode ge ma 850 SFH4646 sfh4845 850 nm photodiode pigtail SFH2310 SFH4423 Laser diode LAR
    Text: Fiber Optic Emitters Part No. Package Outline SFH450 SFH750 Infrared/ Vielble Color Package Type T13/* light gray plastic T l3/4 red plastic Oh 10 mA NW Infrared 950 GaAs 90 Visible (Red) 660 GaAs 9 665 80 950. GaAs 90 (Hyper-Red) SFH752 Maximum Wave­ length


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    PDF SFW452V SFH450 SFH750 SFH752 SFH450V SFH250/V SFH551/V. SFH780V SFH752V SFH483401 SFH2324 SFH551V photodiode ge ma 850 SFH4646 sfh4845 850 nm photodiode pigtail SFH2310 SFH4423 Laser diode LAR

    SFH 910

    Abstract: BPX61 Q62902-B166 SFH 910 235 SFH463 sfh 309 fr SFH405-2 l71ii IM 317 ld271a
    Text: IR-Lumineszenzdioden Infrared Emitters 7. Infrarot Indikatorkarte 7. Infrared Indicator Card B e i B e s tr a h lu n g le u c h t e t d ie a k tiv e F lä c h e o r a n g e a u f, w o d u r c h IR - S tra h ­ W h e n th e a c tiv e a r e a is e x p o s e d to r a d ia tio n it e m its o r a n g e lig h t, th u s


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    PDF Q62901-B79 Q62902-B166 310/FA SFH 910 BPX61 Q62902-B166 SFH 910 235 SFH463 sfh 309 fr SFH405-2 l71ii IM 317 ld271a

    SFH400-2

    Abstract: LD275-2 IR remote control SFH205 sfh910 LD274-3 LD275-3 SFH402-2 LD242-3 Gaa 725
    Text: Infrared Emitters Radiant tntenarty Package Outline r r n 0 r = ~ i p t— !ï-" à i h Part Number Package Type Surge Current HaH Angle mA (t< 10|ie ) A Fealuree Paga SFH420 SMTTOPLED ±60“ 2.5-5 100 GaAs, 950 nm. On tape and reel. 7-25 SFB421 SMTTOPLED


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    PDF SFH420 SFB421 SFH205, BP104 BP103. BP104, BP103B. LD271 LD271L SFH400-2 LD275-2 IR remote control SFH205 sfh910 LD274-3 LD275-3 SFH402-2 LD242-3 Gaa 725

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SFH 483501 40-STRIPE ARRAY Package Dimensions in mm 1 2 3 4 FEATURES N.C NTC Thermistor NTC Thermistor Laser Cathode Maximum Ratings Laser Diode CW Output Power, TSU0=25‘C <l>ecw Pulse Output Power, TSL)B=25"C (<l>epll|S) t < 1 5 0 m s . DS0 01


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    PDF 40-STRIPE SFH483501

    Untitled

    Abstract: No abstract text available
    Text: LD242 SIEMENS GaAs Infrared Emitter Dimensions in inches mm .141 (3.6) .571i (14.5)_ ( _ .492r o( í ? ) 0.100 (2.54) Áíiode 0 .018 (0.45) 106(2.7) GET06625 Crap Location FEATURES • GaAs infrared emitting diode, fabricated In a liquid phase epitaxy process


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    PDF LD242 GET06625 BP103, BPX63, SFH464, SFH483 0HSD1S37 /lE100mA 0H801037