murata filter SFE 10.7
Abstract: sfe 6.5MHz Filter sfe 5.5 murata sfe 6.5MHz MURATA sfe 5.5 MHZ sfe 455khz filter sfe 4.5 murata 5.5MHz ceramic Filter sfsh6 SFE10.7MHY
Text: MHz Filters Introduction Today, most FM radio designs use 10.7MHz IF filters. The characteristics of these filters help determine the performance characteristics of the radio it is used in. Besides providing low cost filtering, ceramic10.7MHz IF filters provide
|
Original
|
PDF
|
ceramic10
murata filter SFE 10.7
sfe 6.5MHz Filter
sfe 5.5 murata
sfe 6.5MHz
MURATA sfe 5.5 MHZ
sfe 455khz filter
sfe 4.5 murata
5.5MHz ceramic Filter
sfsh6
SFE10.7MHY
|
panasonic inverter manual vf 200
Abstract: panasonic inverter manual vf 100 sony 369-42 murata filter cfw 455 ht murata filter cfj455 CFWM 450 HT TA8864N cfw 455 murata CFW 455 HT mitsubishi inverter fr service manual
Text: The Piezoelectric Effect Piezoelectric Effect Basics A piezoelectric substance is one that produces an electric charge when a mechanical stress is applied the substance is squeezed or stretched . Conversely, a mechanical deformation (the substance shrinks or expands) is produced
|
Original
|
PDF
|
|
murata filter cfm 455 d
Abstract: CFJ455K 13 murata filter cfj455k e10.7s CFWM 450 CFM455D cfj455K14 murata ceramic filter e10.7a cfj455k5 murata murata cfj 455
Text: FILTERS FOR AM APPLICATIONS 450–470kHz SFU/SFZ SERIES SFU450B14 for contact to IFT SFZ450HL3/JL3/KL3 SFZ450H3/J3/K3 (for contact to resistor) FEATURES • Center frequency range between 450 and 470kHz is available. Standard tolerance is ±2kHz. ■ For synthesizers, the types of center
|
Original
|
PDF
|
470kHz
SFU450B14
SFZ450HL3/JL3/KL3
SFZ450H3/J3/K3
470kHz
468kHz
450kHz)
SFU450A3
SFU450C5
SFU455A/C5/B
murata filter cfm 455 d
CFJ455K 13
murata filter cfj455k
e10.7s
CFWM 450
CFM455D
cfj455K14
murata ceramic filter e10.7a
cfj455k5 murata
murata cfj 455
|
STF 410 B 2 A
Abstract: DEUTSCH SRE sfe 410 COMPAGNIE DEUTSCH reb 07 time relay Deutsch socket SME410 DSAHI00046190.txt deutsch sfe
Text: Serie REB Division Relais France FP-REL-22/10/02 indice c Her metically sealed time delay single break relay Hermetically General characteristics Metal can, sealed time delay relay, with 2PDT output Sizes Mass Timing range Finish Mating socket 25,8 x 25,8 x 25,7 mm maxi
|
Original
|
PDF
|
|
reb 07 time relay
Abstract: sfe 410 RELAY 2PDT 2A 28 VDC SME410 SFE410 SME Series CHAISES STF 410 B 2 A REB RELAY
Text: Series REB Hermetically sealed time delay single break relay for severe environmental conditions 2 Pdt 10 Amp General characteristics Metal can, sealed time delay relay, with 2PDT output Sizes 25,8 x 25,8 x 25,7 mm maxi Mass 60 g maxi Timing range 400 ms to 5 400 s
|
Original
|
PDF
|
|
SFE107M
Abstract: SFE 10.7 Mj SFE 10.7 M p
Text: CERAMIC FILTERS LOW LOSS, HIGHLY SELECTIVE, MINIATURE m u R a ta SFE M A /M S /M J/M H 10.7MHz The standard SFE 10.7 line of ceramic filters are extremely reliable devices that exhibit excellent waveform symmetry. These filters have traditionally found wide application in
|
OCR Scan
|
PDF
|
12MHz)
SFE10
SFE107M
SFE 10.7 Mj
SFE 10.7 M p
|
wl 1281
Abstract: SFE-130W-14150-38
Text: 6_ ? A 0-6 10.06 Ü. 6-30 30-120 ±0.2 ±0.1 fa 0-3 ± 0.2 fa 3-6 ±0.5 6-30 ± 0.8 D D DIRECTION OF ROTATION ix jR : 1. S jïàJîstjL'j' hi m3 2. l i t t Æ : 3. O V ,# ié }C C W . A4 DRAWER: CHECKER: 3. TITEL* ÏW® MUSTER NO: SFE-130W-14150-38
|
OCR Scan
|
PDF
|
SFE-130W-14150-38
80178/A081128-1
60aterial(
UEW130Â
E214423
70G33HSIL
zytel70G
33IISIL
wl 1281
|
APT5027BVR
Abstract: 500V20A APT5027
Text: APT5027BVR ADVANCED W ZA P o w e r Te c h n o l o g y 500V 20A 0.270Í2 POWER MOS V Power M O S V is a new generation of high voltage N-Channel enhancement mode power M O SFE Ts. This new technology minimizes the J F E T effect, increases packing density and reduces the on-resistance. Power M OS V
|
OCR Scan
|
PDF
|
APT5027BVR
O-247
MIL-STD-750
O-247AD
APT5027BVR
500V20A
APT5027
|
Untitled
Abstract: No abstract text available
Text: A m 9 5 1 6 A Universal DM A Controller UDC FINAL D IS T IN C T IV E C H A R A C T E R IS T IC S T ra n sfe r M odes: S ingle, d em and d e d ic a te d w ith bus hold, d em and d e d ic a te d w ith bus release, dem and in terle ave 16 M B physical add ressing range
|
OCR Scan
|
PDF
|
Am9516A
|
Untitled
Abstract: No abstract text available
Text: A D V AN CF D PÖWFR TECHNOLOGY M'IE T> WÊ 0 2 5 7 ^ 0 ^ A d va n ced P o w er Te c h n o l o g y * OOOOk.32 17b «AVP 'T-'iPK-Ie? 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = A P T T O -2 4 7 S IN G L E P U L SE U IS R A T E D P O W E R M O SFE T s =
|
OCR Scan
|
PDF
|
APT4020BNR
APT4025BNR
APT4030BNR
APT4040BNR
APT4065BNR
APT4080BNR
APT5020BNR
APT5022BNR
APT5025BNR
APT5027BNR
|
BS107 spice
Abstract: BS108 spice K9614 Philips Semiconductors Selection Guide BUK7535-55 K9514 PHD69N03LT bsh201 SFE 7.2 k75-10
Text: Philips Semiconductors PowerMOS Transistors Selection guide POWERMOS SELECTION GUIDE Vos V RoS(ori) (Ohm) @Id (A) tamax (A) Pûmax (W) TYPE NUMBER TECHNOLOGY PACKAGE PAGE 25 0.01 25 75 142 PHB87N03LT L2 TrenchMOS N SOT404 1656 25 0.01 25 75 142 PHP87N03LT
|
OCR Scan
|
PDF
|
PHB87N03LT
PHP87N03LT
PHB69N03LT
PHD69N03LT
PHP69N03LT
PHB55N03LT
PHD55N03LT
PHP55N03LT
PHB50N03LT
PHP50N03LT
BS107 spice
BS108 spice
K9614
Philips Semiconductors Selection Guide
BUK7535-55
K9514
bsh201
SFE 7.2
k75-10
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TMP47C434/634 CMOS 4-BIT MICROCONTROLLER TMP47C434N, TMP47C634N The 47C434/634 are based on the TLCS-470 CMOS series. The 47C434/634 have display on-screen circuit to display characters and marks which indicate channel or tim e on TV screen, A/D converter inpu t, and D/A
|
OCR Scan
|
PDF
|
TMP47C434/634
TMP47C434N,
TMP47C634N
47C434/634
TLCS-470
P47C434N
P47C634N
SD1P42
|
7420A
Abstract: 7.5b 35 2N5840 2N5839
Text: File Number 410 2N5838, 2N5839, 2N5840 High-Voltage, High-Power Silicon N-P-N Power Transistors For Switching and Linear Applications in Military, Industrial, and Commercial Equipment Features: • M aximum safe-area-of-operation curves m Low saturation voltages
|
OCR Scan
|
PDF
|
2N5838,
2N5839,
2N5840
2N5840]
2N5839]
2N5838]
2N5839
2N5840*
T0-204A
7420A
7.5b 35
2N5840
|
fc4k
Abstract: 4016B AD10 AD17 Z8000 CD 4016 PIN DIAGRAM AP-28A 16-Bit Microcomputers u107 refresh logic
Text: Advanced Micro Computers A subsidiary of Advanced Micro Devices Am96/1000 Series Dynamic Random-Access Memory Boards User’s Manual 00680140 $5.00 REVISION RECORD REVISION 01 DESCRIPTION Preliminary Issue 5/15/80 02 Manual Updated To Support A3 Fabrication Level
|
OCR Scan
|
PDF
|
Am96/1000
MK/12Ã
AMC-722
fc4k
4016B
AD10
AD17
Z8000
CD 4016 PIN DIAGRAM
AP-28A
16-Bit Microcomputers
u107
refresh logic
|
|
|
Untitled
Abstract: No abstract text available
Text: f e j BENCHMARQ _bq3285 Real-Time Clock RTC Features >• >- D irect clock/calendar replacem ent for IBM AT-compatible com puters and o th er applications >• Functionally compatible w ith th e DS1285/MC146818B - Closely m atches MC146818A pin configuration
|
OCR Scan
|
PDF
|
bq3285
DS1285/MC146818B
MC146818A
24-hour
24-pin
28-pin
bq3285
|
scn68230
Abstract: SCN68230CAN48 scn6823 SCN68230C8N48 IC LA 4127 68230
Text: JANUARY 1983 MICROPROCESSOR DIVISION PARALLEL INTERFACE/TIMER S C N 68230 P re lim in a r y DESCRIPTION The SCN68230 Parallel In terface/T im er Pl/T provides ve rsatile d ouble buffered parallel Inte rfa ce s and an ope ra tin g sys tem oriented tim e r to S68000 system s. The
|
OCR Scan
|
PDF
|
SCN68230
S68000
SCN68230CAN48
scn6823
SCN68230C8N48
IC LA 4127
68230
|
GI 9340
Abstract: No abstract text available
Text: 10 S S3 NOTES IY D 'J ' j 'J I. I5X A LJ P BTP U L 9 4 V -0 , U S 27^74; 'J > L MATERIAL HOUSING : G.F. I5Z PBTP (U L94V -0) TERMINAL : PHOSPHOR BRONZE 1.27 tC o /A 'J T iL A T -A J L 6 .0 6 * s G i l JH h I ,A V FOR USE WITH AWG*26 & *2 8 STRANDED WIRE (CONSISTS OF 7 CONDUCTORS)
|
OCR Scan
|
PDF
|
EN-02JA1021)
GI 9340
|
BFR49
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 2SE D □ ^ £ 3 = 1 3 1 0017133 a • BFR49 BFF9UA is recommended for new design T -3 /-H N-P-N 2 GHz WIDEBAND TRANSISTOR N-P-N transistor in a miniature hermetically sealed micro stripline encapsulation featuring a high transition frequency and low noise. It is suitable for amplifiers up to S-band frequencies in
|
OCR Scan
|
PDF
|
BFR49
bbS-3131
BFR49
|
Untitled
Abstract: No abstract text available
Text: < ÿ > 2 jL Œ P ro d u c t S p e c ific a tio n Z8016 Z8000 Z-DTC Direct Memory Access Transfer Controller O c to b e r 1988 FEATURES • M em ory-to-peripheral tra n s fe rs up to 2 .6 6 M bytes per second at 4 MHz. ■ M em ory-to-m em ory tra nsfers up to 1.33M bytes per
|
OCR Scan
|
PDF
|
Z8016
Z8000
|
4302 burr brown
Abstract: burr-brown 3501A burr-brown Model 4302 4302 multifunction converter burr brown op amp 3501a 1N4154 EJ-10
Text: 4302 B U R R -B R O W N ’ •b b | 4302 Low Cost MULTIFUNCTION CO N V ER TER FEATURES • LOW COST Efl ■SMALL PACKAGE - Dual-in-line • RELIABLE HYBRID CONSTRUCTION FUNCTIONS ACCURACY MULTIPLY OIVIDE SQUARE SQUARE ROOT EXPONENTIATE ROOTS SINE e COSINE 0
|
OCR Scan
|
PDF
|
10VDC)
10VDC
-10VDC
1N4154
1N4I54
4302 burr brown
burr-brown 3501A
burr-brown Model 4302
4302 multifunction converter
burr brown op amp 3501a
EJ-10
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D bbS3T31 0D14T07 T • LAE4002S _ r-3 i-3ii MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure
|
OCR Scan
|
PDF
|
bbS3T31
0D14T07
LAE4002S
|
Transistor SJE 5331
Abstract: BFR49 sje 5331 transistor SJE 5331 IEC134
Text: A ME R PHILIPS/DISCRETE 2SE D • Lfci53cì31 O G l ? ^ & BFR49 BFR4 \^ _ BHH9UA is recommended for new design r-ti-ii N-P-N 2 GHz WIDEBAND TRANSISTOR N-P-N transistor in a miniature hermetically sealed micro stripline encapsulation featuring a high transition frequency and low noise. It is suitable for amplifiers up to S-band frequencies in
|
OCR Scan
|
PDF
|
BHH90A
BFR49
T-3J-11
Transistor SJE 5331
BFR49
sje 5331 transistor
SJE 5331
IEC134
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS50VS-2 HIGH-SPEED SWITCHING USE FS50VS-2 OUTLINE DRAWING * Dimensions in mm * I q J w e Q w r 10V DRIVE V d s s .100V o +i CO C\i q w e r q o - GATE DRAIN
|
OCR Scan
|
PDF
|
FS50VS-2
105ns
O-220S
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS50VSJ-2 HIGH-SPEED SWITCHING USE FS50VSJ-2 OUTLINE DRAWING L q Dimensions in mm J w e 6 +i CD Q w r 4V DRIVE q w e r V d s s .10 0 V rDS ON (MAX). 4 8 m i2
|
OCR Scan
|
PDF
|
FS50VSJ-2
O-220S
|
